Universal Strategy for Improving Perovskite Photodiode Performance: Interfacial Built‐In Electric Field Manipulated by Unintentional Doping

Dan Wu,Wenhui Li,Haochen Liu,Xiangtian Xiao,Kanming Shi,Haodong Tang,Chengwei Shan,Kai Wang,Xiao Wei Sun,Aung Ko Ko Kyaw

DOI: https://doi.org/10.1002/advs.202101729

IF: 15.1

2021-07-15

Advanced Science

Abstract:<p>Organic–inorganic halide perovskites have demonstrated significant light detection potential, with a performance comparable to that of commercially available photodetectors. In this study, a general design guideline, which is applicable to both inverted and regular structures, is proposed for high-performance perovskite photodiodes through an interfacial built-in electric field (<i>E</i>) for efficient carrier separation and transport. The interfacial <i>E</i> generated at the interface between the active and charge transport layers far from the incident light is critical for effective charge carrier collection. The interfacial <i>E</i> can be modulated by unintentional doping of the perovskite, whose doping type and density can be easily controlled by the post-annealing time and temperature. Employing the proposed design guideline, the inverted and regular perovskite photodiodes exhibit the external quantum efficiency of 83.51% and 76.5% and responsivities of 0.37 and 0.34 A W⁻¹, respectively. In the self-powered mode, the dark currents reach 7.95 × 10⁻¹¹ and 1.47 × 10⁻⁸ A cm⁻², providing high detectivities of 7.34 × 10¹³ and 4.96 × 10¹² Jones, for inverted and regular structures, respectively, and a long-term stability of at least 1600 h. This optimization strategy is compatible with existing materials and device structures and hence leads to substantial potential applications in perovskite-based optoelectronic devices.</p>

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry