Observation Of Above-Room-Temperature Ferromagnetism In Chemically Stable Layered Semiconductor Rhi3

Xiangli Che,Zhuang Zhang,Dong Wang,Wei Zhao,Teng Wang,Pei Zhao,Gang Mu,Jian Huang,Fuqiang Huang
DOI: https://doi.org/10.1088/2053-1583/abb3ba
IF: 6.861
2020-01-01
2D Materials
Abstract:Two-dimensional (2D) ferromagnetic semiconductors with a room-temperature Curie temperature (T-c) are required for next-generation spintronic devices, but the current candidates suffer from a lowT(c)and poor chemical stability. Here, a new layered compound RhI(3)is discovered to be an above-room-temperature ferromagnetic semiconductor. This compound crystallizes in a monoclinic crystal system of space groupC2/m, with the unit cell ofa= 6.773(8) angstrom,b= 11.721(2) angstrom,c= 6.811(8) angstrom and beta= 108.18(4) degrees. The structure consists of honeycomb rhodium layers separated by iodine-iodine van der Waals gap. Chemically stable RhI(3)possesses an optical bandgap of 1.17 eV. Its robust ferromagnetism with aT(c)of above 400 K, which is far higher than 61 K for the well-known CrI(3)and the highest among the bulk 2D ferromagnetic semiconductors. The robust intrinsic ferromagnetic response is attributed to the Rh(2+)and exchange interactions between I-pand Rh-delectrons induced by iodine vacancies. This work reveals that RhI(3)is a prime candidate for spintronic devices above room temperature and provides a strategy to obtain high temperature 2D ferromagnetic semiconductors by introducing vacancies.
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