Observation of above-room-temperature ferromagnetism in chemically stable layered semiconductor RhI 3

Xiangli Che,Zhuang Zhang,Dong Wang,Wei Zhao,Teng Wang,Pei Zhao,Gang Mu,Jian Huang,Fuqiang Huang
DOI: https://doi.org/10.1088/2053-1583/abb3ba
IF: 6.861
2020-09-30
2D Materials
Abstract:Abstract Two-dimensional (2D) ferromagnetic semiconductors with a room-temperature Curie temperature ( T c ) are required for next-generation spintronic devices, but the current candidates suffer from a low T c and poor chemical stability. Here, a new layered compound RhI 3 is discovered to be an above-room-temperature ferromagnetic semiconductor. This compound crystallizes in a monoclinic crystal system of space group C 2/ m , with the unit cell of a = 6.773(8) Å, b = 11.721(2) Å, c = 6.811(8) Å and β = 108.18(4) °. The structure consists of honeycomb rhodium layers separated by iodine–iodine van der Waals gap. Chemically stable RhI 3 possesses an optical bandgap of 1.17 eV. Its robust ferromagnetism with a T c of above 400 K, which is far higher than 61 K for the well-known CrI 3 and the highest among the bulk 2D ferromagnetic semiconductors. The robust intrinsic ferromagnetic response is attributed to the Rh 2+ and exchange interactions between I- p and Rh- d electrons induced by iodine vacancies. This work reveals that RhI 3 is a prime candidate for spintronic devices above room temperature and provides a strategy to obtain high temperature 2D ferromagnetic semiconductors by introducing vacancies.
materials science, multidisciplinary
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