Abstract:The surface preparation is a prerequisite for ensuring the required properties of a diamond film formed by gas-phase deposition. The influence of the temperature and concentration of the CuSO 4 etchant on the structural and phase compositions of the surface of hard-alloy materials is considered in this work, and the structural and phase compositions of a continuous polycrystalline diamond film at its growth stages is also considered. The adhesion of the diamond films to the surface of hard-alloy materials is determined qualitatively. It is established that the treatment of the hard-alloy surface in the CuSO 4 solution at t = 23°C leads to the inhomogeneous removal of a cobalt binder with chipping WC grains and the formation of the porous structure in the surface layer of the WC–6% Co alloy. The treatment by the CuSO 4 etchant at t = –2°C provides the homogeneous etching of the Co binder over the boundaries of WC grains and the formation of a chemically homogeneous surface. The orientation growth and adhesion of the diamond film depend on the elemental composition of the WC–Co alloy surface after treatment by the CuSO 4 solution. If the treatment was performed at t sln = 23°C, then the removal of copper from the defect surface WC layer is complicated during the synthesis, which provides the multidirectional growth of diamond crystals in the film along two directions, 〈111〉 and 〈110〉, which causes critical biaxial compressive stresses (2.5 GPa) and leads to low film adhesion to the hard alloy surface. If the treatment is performed at t sln = –2°C, then the orientational growth of diamond crystals in the film occurs in one preferential crystallographic direction 〈111〉, which lowers the biaxial compressive stresses (1.7 GPa) and increases the adhesive bond of the film to the hard alloy surface. The structure imperfection calculated from the ratio of the lines of integrated intensities I 1333 / I 1580 using the Raman spectroscopy method decreases with an increase in concentration at negative temperatures and increases at positive temperatures of the CuSO 4 solution during surface preparation.

Investigation of 〈100〉-Oriented Etching Pattern on Diamond Coated with Ni and Cu

Unveiling the formation of Mo2C coating on diamond particles along with anisotropic etching by Mo powder

Diamond coatings on copper surfaces through interface engineering

Homoepitaxial overgrowth of (111) diamond films on Au-coated and Ni-coated substrates

Stability of lithographically patterned transition metal layers controls spatial selectivity during etching of diamond

Crystallographic Orientation Dependent Reactive Ion Etch in Single Crystal Diamond

Crystallographic Orientation Dependent Reactive Ion Etching in Single Crystal Diamond

Scanning Tunneling Microscopy Study of Surface Reconstruction Induced by N Adsorption on Cu（100） Surface

Growth Features of Diamond Films on the Tungsten Carbide Surface with a Copper Sublayer

Patterning of diamond with 10 nm resolution by electron-beam-induced etching

Morphologies and structures of chemical vapor deposited diamond films and film-substrate interfaces

Growth and characterization of chemical vapor deposition diamond coating incorporated amorphous carbon with high Raman bands induced by CuO particles

Oriented and textured growth of (111) diamond on silicon using hot filament chemical vapour deposition

Deterministic Nanopatterning of Diamond Using Electron Beams.

Microscopic Origin For The Orientation Dependence Of Nv Centers In Chemical-Vapor-Deposited Diamond

Features of the diamond films growth on the tungsten carbide surface by a copper underlayer

Preparation of Ti-coated Diamond Particles by Microwave Heating

Selected-Area Diamond Deposition On Si Substrates Pretreated In Different Ways

Synthesis of Oriented Textured Diamond Films on Silicon Via Hot Filament Chemical Vapor Deposition

Diamond etching with near-zero micromasking

NV-doped microstructures with preferential orientation by growth on heteroepitaxial diamond