Distinct intermediate states in the isostructural R − 3 m phase of the topological insulator B i 2 S e 3 at high pressure

Xinguo Hong,Matt Newville,Yang Ding,Tetsuo Irifune,Genda Gu,Ho-Kwang Mao
DOI: https://doi.org/10.1103/PHYSREVB.101.214107
IF: 3.7
2020-01-01
Physical Review B
Abstract:The electronic state of layered three-dimensional topological insulators at high pressure is a compelling but a puzzling hot topic. The open question is the structural origins for the pressure-induced novel physics of electronic topological transition (ETT), topological superconductivity, and Majorana fermions in the same isostructural $R\\text{\\ensuremath{-}}3m$ phase. Here, we report a combined investigation on the local structure and bulk electronic state of topological insulator $\\mathrm{B}{\\mathrm{i}}_{2}\\mathrm{S}{\\mathrm{e}}_{3}$ using x-ray diffraction, high quality x-ray absorption fine-structure spectroscopies both at the $\\mathrm{Bi}\\phantom{\\rule{0.16em}{0ex}}{L}_{3}$ edge and at the Se K edge, and first-principles theoretical calculations. We have found three pressure-induced distinct intermediate states in the isostructural rhombohedral phase of $\\mathrm{B}{\\mathrm{i}}_{2}\\mathrm{S}{\\mathrm{e}}_{3}$. The bulk electronic structure of the $R\\text{\\ensuremath{-}}3m$ phase was calculated based on the experimental structure. The corresponding distinct electronic states provide the origins of ETT at \\ensuremath{\\sim}3 GPa and the metallization at 7--9.5 GPa in the $R\\text{\\ensuremath{-}}3m$ phase of $\\mathrm{B}{\\mathrm{i}}_{2}\\mathrm{S}{\\mathrm{e}}_{3}$. Our results demonstrate that the local structure plays a critical role in the electronic states of topological insulator $\\mathrm{B}{\\mathrm{i}}_{2}\\mathrm{S}{\\mathrm{e}}_{3}$.
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