Pressure-induced Structural and Electronic Transitions in Bismuth Iodide

Xiaomeng Wang,Juefei Wu,Jinghui Wang,Tong Chen,Hao Gao,Pengchao Lu,Qun Chen,Chi Ding,Jinsheng Wen,Jian Sun
DOI: https://doi.org/10.1103/physrevb.98.174112
2018-01-01
Abstract:Using a machine-learning accelerated crystal structural search, and ab initio calculations together with high-pressure Raman measurements, we study the crystal and electronic structures of bismuth iodide (BiI) systematically up to 50 GPa. We find that the ambient C2/m phase (beta-Bi4I4) transforms across a tetragonal P4(2)/mmc phase at 8.5 GPa and finally to a hexagonal P6(3)/mmc phase at 28.2 GPa. Our high-pressure Raman experiments identify a phase transition at around 8.6 GPa, and the experimental Raman modes evolution agrees with our calculations reasonably. Band-structures calculations suggest the BiI system undergoes a pressure-induced topological phase transition from a topological metal (P4(2)/mmc phase) to a trivial metal (the P6(3)/mmc phase). Our electron-phonon coupling calculations show both the P4(2)/mmc and P6(3)/mmc phases are superconductors and the estimated superconducting critical temperature agrees with previous measurements. Our study shows the previously reported pressure-induced superconductivity in BiI should originate from structure phase transitions.
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