Giant Piezoelectricity of Janus M₂SeX (M = Ge, Sn; X = S, Te) Monolayers

Jian Qiu,Fusheng Zhang,Hui Li,Xianping Chen,Bao Zhu,Haojie Guo,Zhaogui Ding,Jiading Bao,Jiabing Yu
DOI: https://doi.org/10.1109/led.2021.3056886
IF: 4.8157
2021-01-01
IEEE Electron Device Letters
Abstract:It is found that many two-dimensional materials are easy to obtain out-of-plane piezoelectric properties because of their Janus structure. Here, based on the monolayer GeSe and SnSe, we study the electronic structure and piezoelectricity of the Janus M2SeX (M=Ge, Sn; X=S, Te) monolayers. Due to the lack of inversion symmetry and mirror symmetry, as well as flexible mechanical properties, the 2D Janus M2SeX monolayers have large in-plane piezoelectric coefficients d11 (up to 345.08pm/V) and out-of-plane piezoelectric coefficients d31 (up to 3.83pm/V). All energy band structures of two-dimensional (2D) Janus M2SeX monolayers show indirect bandgap and Zeeman-type spin splitting after considering spin orbit coupling (SOC). The lack of mirror symmetry leads to out-of-plane spin polarization. In addition, the calculation based on the deformation potential theory shows that the 2D Janus M2SeX monolayers have high carrier mobility. The large piezoelectric properties and high carrier mobility show the application potential of 2D Janus M2SeX monolayers in flexible electronic devices and piezoelectric devices.
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