Dielectronic Recombination for H-like Silicon Ion

SHENG Xiao-hong,YANG Tian-li,TANG Yong-jian,JIANG Gang,ZHU Zheng-he
DOI: https://doi.org/10.3969/j.issn.0490-6756.2005.01.021
2005-01-01
Abstract:By using the quasi-relativistic multi-configuration Hatree-Fock relativistic theory and Cowans code (RCN34/RCN2/RCG9),the authors calculate the dielectronic recombination rate coefficients for H-like silicon ions and discuss the effects on DR rate coefficients from orbital angular momentum of autoionization state, the electron temperature and final state of DR process. The results show clearly that the recombination tends to be dominant in whole electron temperature with peak value at.
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