Abstract:Applying the ab initio pseudo. potential technique, we had predicted the lattice structures, density of states, phonon dispersion curves of the recently. discovered tetragonal, monoclinic and orthorhombic phases of Ge3N4. The negative formation enthalpy, the satisfactory of Born's stability criteria and no imaginary frequency can be seen in the phonon dispersion curves proof that the three Ge3N4 polymorphs can retain their stabilities in the pressure range of 0-20 GPa. The temperature affects the cell volume, thereby decreasing the bulk modulus. The band gaps show that Ge3N4 are semiconductors, while obvious s-p hybridizations can be seen in the density of states. The band gaps decrease with applied pressure, which is due mainly to the generation of non. local electrons. Then, the quasi. harmonic approximation is used to study the thermodynamic properties of Ge3N4. The results show that the thermal expansion coefficient, entropy, heat capacity, Debye temperature and Gruneisen parameter are significantly affected by both temperature and pressure. The thermal expansions of m-Ge3N4 and t-Ge3N4 are three and two times greater than that of o-Ge3N4, respectively. The lattice vibration frequency of o-Ge3N4 keeps unchanged at different temperatures. Our results are concordant with the experimental data and the previous results. Therefore, the present results indicate that the combination of ab initio calculations and quasi. harmonic approximation is an efficient method to simulate the high. temperature behaviors of different Ge3N4 polymorphs. Generally speaking,

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First-Principles Study on the Electronic, Elastic and Thermodynamic Properties of Three Novel Germanium Nitrides

Theoretical Studies on Tetragonal,Monoclinic and Orthorhombic Distortions of Germanium Nitride Polymorphs

Determination of the Finite-Temperature Anisotropic Elastic and Thermal Properties of Ge3N4: A First-Principles Study

The Electronic, Optical, and Thermodynamical Properties of Tetragonal, Monoclinic, and Orthorhombicm3n4(m= Si, Ge, Sn): A First-Principles Study

First-Principle Calculations of Elastic Properties of Wurtzite-Type Aluminum Nitride under Pressure

Ab Initio Study on Intrinsic Defect Properties of Germanium Nitride Considered for Gate Dielectric

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Band structures for Ge3N4 polymorphs studied by DFT-LDA and GWA

First-principles study of the structural, electronic, dielectric, and dynamical properties of gallium nitride in the graphite-like hexagonal P63/mmc phase

First-principles calculations of electronic structure, optical and thermodynamic properties of GaBN2, Ga3BN4 and GaB3N4 nitrides

<i>Ab Initio</i> Study of the Ge<sub>3</sub>N<sub>4</sub> Semiconductor Materials in its Cubic γ Phase: A Computer Simulation

First-principles Prediction of Structure, Mechanical and Thermodynamic Properties of BixGeyOz Ternary Bismuth Crystals

Ab Initio Study of the Ge3N4 Semiconductor Materials in its Cubic γ Phase: A Computer Simulation

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Ab-Initio Calculations of A Refractory Ceramic (Beta-Ge3n4): A Computer Simulation

First-Principles Calculations of the Single-Bonded Cubic Phase of Nitrogen

First Principles Study of Negative Thermal Expansion (NTE) in Manganese Nitride materials

A First-Principles Study of Novel Cubic AlN Phases

First-Principles Calculations on Crystal and Electronic Structures of B-C-N Superhard Compounds

Half-metallic ferromagnetism in transition-metal doped germanium nitride: A first-principles study