Steady-State Surface Photovoltage Technique

XU Jin-jie,WAND Xian-wei,WANG De-jun,ZHANG Xing-tang,HUANG Ya-bin,DU Zu-Liang,LI Tie-jin
DOI: https://doi.org/10.3969/j.issn.1003-4978.2005.03.005
2005-01-01
Abstract:Combined with the equivalent circuit diagram and principle sketch map of steady-state SPV measurement, the SPV values of c-axis TiO_2 single crystal are estimated and compared with the value estimated from photocurrent measurement. The SPV values are obtained by the sandwich SPV measurement model and the MIS SPV measurement model. The experiment shows that the sandwich SPV measurement model is similar to MIS SPV measurement model and has higher sensitivity. Furthermore, the sandwich model can provide sub-gap transition SPV information when biasing a weak dc field. And the weak dc field is of no effect on MIS model SPV and photocurrent signal. The weak dc field works in localized state transition and can not affect delocalized transition. On the other hand, the sub-gap transition SPV has different carrier separating mechanism from super-gap transition SPV.
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