Characterization of SingIe Layers in AII-thin-fiIm EIectrochromic Device (gIass/ITO/NiOx/ZrO2:H/WO3/ITO) and OpticaI Performance of Device

Xing-wang SONG,Guo-bo DONG,Qi-rong LIU,Xun-gang DIAO
DOI: https://doi.org/10.3969/j.issn.1672-6634.2016.01.006
2016-01-01
Abstract:All‐thin‐film electrochriomic device with structure of glass/ITO/NiOx/ZrO2 :H/WO3/ITO was prepared by continuous magnetron sputtering .Morphology ,crystal structure and elemental composition of NiOx ,ZrO2 :H and WO3 which play important roles in the device were presented .The results show that small pores are conductive to the extraction and injection of H + exist in NiOx surface . Rough surface and smaller particle size were found on the surfaces of ZrO 2 :H and WO3 films .Both ZrO2 :H and WO3 have amorphous structure ,while NiOx presents cubic microcrystalline .Optical per‐formance and cycle life of the device was investigated using visible transmission spectrum .Although col‐oring responded much slowly after 60000 cycles ,the bleaching response was fairly constant and visible transmittance modulation of the device still remained high at 57 .9% .T he results indicated that the de‐vice has excellent electrochromic performance and durability ,and preliminary meets the requirement of commercial application .
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