THE PHYSICS AND ENGINEERING INⅢ-NITRIDE SEMICONDUCTORS—A SUCCESSFUL MODEL OF COMBINATION OF BASIC RESEARCH AND COMMERCIALIZATION

Xin RONG,Shunfeng LI,Weikun GE

DOI: https://doi.org/10.3969/j.issn.1009-7104.2017.06.002

2017-01-01

Abstract:Represented by GaN,Ⅲ-Nitrides belong to a new group of wide-gap semiconductor materials,the so called"third generation semiconductors".Comparing with traditional semi-conductors,such as Ge,Si and Ⅲ-Ⅴ semiconductors,GaN has many superior properties, e.g.wide band-gap,high breakdown voltage,high physical and chemical stability.Although the crystal quality of GaN is worse than the"traditional"semiconductors,it didn't pose big obstacles for the application of GaN-based systems in opto-electronic and electronic devices. GaN,as a new wide-gap semiconductor,is a successful model of combination of basic research and commercialization during the last few decades.