Electrochemical Properties of Bismuth Oxide Thin Films Prepared by Pulsed Laser Deposition

储艳秋,付正文,应丽,郑企克,秦启宗
DOI: https://doi.org/10.3969/j.issn.0427-7104.2003.06.028
2003-01-01
Abstract:Bismuth oxide thin films have been successfully fabricated on the stainless steel substrates by using pulsed laser deposition method for the first time. The tetragonal Bi_(2)O_(3) thin films with good electrochemical properties were fabricated at 300 ℃ of the substrate temperature in 30 Pa oxygen ambient. Between 0.70 and 3.5 V,the Bi_(2)O_(3) thin films delivered a reversible capacity of 100 mAh/g at 2 C rate and exhibited a good cycling reversibility with no obvious fading up to 100 cycles. The structure and compositions of Bi_(2)O_(3) films were characterized by X-ray diffraction,scanning electron microscopy and Raman spectrometry. The diffusion coefficient determined by potential step method for the extraction of lithium ions is found to be 5.8×10~(-14) cm~(2)·s~(-1).
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