Abstract:First-principles calculations have been performed to study the energetic, electronic, and magnetic properties of substitutional 3d transition metal dopants in monoclinic transition metal dichalcogenides (TMDs) as topological insulators (1T′-MX2 with M = (Mo, W) and X = (S, Se)). We find various favorite features in these doped systems to introduce magnetism and other desirable electronic properties: (i) The Mn embedded monoclinic TMDs are magnetic, and the doped 1T′-MoS2 still maintains the semiconducting character with high concentration of Mn, while an electronic phase transition occurs in other Mn doped monoclinic TMDs with an increasing concentration of Mn. Two Mn dopants prefer the ferromagnetic coupling except for substitution of the nearest Mo atoms in 1T′-MoS2, and the strength of exchange interaction shows anisotropic behavior with dopants along one Mo zigzag chain having much stronger coupling. (ii) The substitutional V is a promising hole dopant, which causes little change to the energy dispersion around the conduction and valence band edges in most systems. In contrast, parts of the conduction band drop for the electron dopants Co and Ni due to the large structural distortion. Moreover, closing band gaps of the host materials are observed with increasing carrier concentration. (iii) Single Fe dopant has a magnetic moment, but it also dopes electrons. When two Fe dopants have a small distance, the systems turn into nonmagnetic semiconductors. (iv) The formation energies of all dopants are much lower than those in hexagonal TMDs and are all negative in certain growth conditions, suggesting possible realization of the predicted magnetism, electronic phase transitions as well as carrier doping in 1T′-MX2 based topological devices.

Electric control of nearly free electron states and ferromagnetism in the transition-metal dichalcogenides monolayers

Electronic, optical and transport properties of van der Waals Transition-metal Dichalcogenides Heterostructures: A First-principle Study

Origin and Electronic Behavior of Improper Ferroelectricity in AB2 (A=Cr, Mo, W; B=S, Se, Te) Transition Metal Dichalcogenides

Tunable electronic properties of two-dimensional transition metal dichalcogenide alloys: A first-principles prediction

Magnetism and Electronic Phase Transitions in Monoclinic Transition Metal Dichalcogenides with Transition Metal Atoms Embedded

Observation of Strong Valley Magnetic Response in Monolayer Transition Metal Dichalcogenide Alloys of Mo0.5W0.5Se2 and Mo0.5W0.5Se2/WS2 Heterostructures

Electrically switchable valley polarization, spin/valley filter, and valve effects in transition-metal dichalcogenide monolayers interfaced with two-dimensional ferromagnetic semiconductors

Rashba Splitting In Bilayer Transition Metal Dichalcogenides Controlled By Electronic Ferroelectricity

The role of Anderson's rule in determining electronic, optical and transport properties of transition metal dichalcogenide heterostructures.

Switch Effect of the Nonquantized Intrinsic Spin Hall Conductivity in Monolayered Monoclinic Transition Metal Dichalcogenides.

Electronic structures, charge transfer and charge orders in twisted transition metal dichalcogenide bilayers

Phase evolution and superconductivity enhancement in Se-substituted MoTe$_2$ thin films

Electron Transport and Device Physics in Monolayer Transition-Metal Dichalcogenides

Modulation of Metal and Insulator States in 2D Ferromagnetic VS 2 by van der Waals Interaction Engineering.

Band engineering in epitaxial monolayer transition metal dichalcogenides alloy Mo<i><sub>x</sub></i>W<sub>1-<i>x</i></sub>Se<sub>2</sub> thin films

Possibility of Combining Ferroelectricity and Rashba-like spin splitting in Monolayers of 1T-type Transition-Metal Dichalcogenides MX2

Realistic tight-binding model for monolayer transition metal dichalcogenides in 1T' structure

Composition Dependence of the Charge Driven Phase Transition in Group-VI Transition Metal Dichalcogenides

Engineering the band structure of type-II MoSe2/WSe2 van der Waals heterostructure by electric field and twist angle: A firstprinciples perspective

First-principles study of valley splitting of transition-metal dichalcogenides in MX2/CrI3 (M=W, Mo; X=S, Se, Te) van der Waals heterostructures

Room Temperature Bound Excitons and Strain-Tunable Carrier Mobilities in Janus Monolayer Transition-Metal Dichalcogenides.