Abstract:First-principles calculations have been performed to study the energetic, electronic, and magnetic properties of substitutional 3d transition metal dopants in monoclinic transition metal dichalcogenides (TMDs) as topological insulators (1T′-MX2 with M = (Mo, W) and X = (S, Se)). We find various favorite features in these doped systems to introduce magnetism and other desirable electronic properties: (i) The Mn embedded monoclinic TMDs are magnetic, and the doped 1T′-MoS2 still maintains the semiconducting character with high concentration of Mn, while an electronic phase transition occurs in other Mn doped monoclinic TMDs with an increasing concentration of Mn. Two Mn dopants prefer the ferromagnetic coupling except for substitution of the nearest Mo atoms in 1T′-MoS2, and the strength of exchange interaction shows anisotropic behavior with dopants along one Mo zigzag chain having much stronger coupling. (ii) The substitutional V is a promising hole dopant, which causes little change to the energy dispersion around the conduction and valence band edges in most systems. In contrast, parts of the conduction band drop for the electron dopants Co and Ni due to the large structural distortion. Moreover, closing band gaps of the host materials are observed with increasing carrier concentration. (iii) Single Fe dopant has a magnetic moment, but it also dopes electrons. When two Fe dopants have a small distance, the systems turn into nonmagnetic semiconductors. (iv) The formation energies of all dopants are much lower than those in hexagonal TMDs and are all negative in certain growth conditions, suggesting possible realization of the predicted magnetism, electronic phase transitions as well as carrier doping in 1T′-MX2 based topological devices.

Switch Effect of the Nonquantized Intrinsic Spin Hall Conductivity in Monolayered Monoclinic Transition Metal Dichalcogenides.

Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study

Quantum Spin Hall Effect in Two-Dimensional Transition-Metal Chalcogenides MX5 (M = Zr, Hf and X = S, Se, Te)

Quantum Spin Hall Effect and Topological Phase Transition in Two-Dimensional Square Transition Metal Dichalcogenides

Anomalous Hall effect in 2$H$-phase transition-metal dichalcogenide monolayers on ferromagnetic substrates

Magnetism and Electronic Phase Transitions in Monoclinic Transition Metal Dichalcogenides with Transition Metal Atoms Embedded

Realistic tight-binding model for monolayer transition metal dichalcogenides in 1T' structure

Topological superconductivity at the edge of transition metal dichalcogenides

Anisotropic Collective Charge Excitations in Quasimetallic 2D Transition‐Metal Dichalcogenides

Quantum Spin Hall State in Monolayer 1T'-Wte 2

Floquet band engineering and topological phase transitions in 1T’ transition metal dichalcogenides

Topology Hierarchy of Transition Metal Dichalcogenides Built from Quantum Spin Hall Layers

Emergence of giant orbital Hall and tunable spin Hall effects in centrosymmetric TMDs

Ising Superconductivity in Transition Metal Dichalcogenides

Quantum spin Hall states in the lateral heteromonolayers of WTe2-MoTe2

On the quantum spin Hall gap of monolayer 1T'-WTe2

Composition Dependence of the Charge Driven Phase Transition in Group-VI Transition Metal Dichalcogenides

Realization of Quantum Spin Hall State in Monolayer 1T'-WTe2

Prediction of the Quantum Spin Hall Effect in Monolayers of Transition-Metal Carbides Mc (M. =. Ti, Zr, Hf)

Quantum Criticality in Twisted Transition Metal Dichalcogenides

Observation of Topologically Protected States at Crystalline Phase Boundaries in Single-Layer WSe2