Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

Research Progress in Growth of One Dimensional Nanocarbons on Carbon Substrate

Growth of One Dimensional Nanocarbons on Bamboo Based Porous Carbon

New Development in the Synthesis of Single-Walled Carbon Nanotubes

Tunable growth of one-dimensional graphitic materials: graphene nanoribbons, carbon nanotubes, and nanoribbon/nanotube junctions

Study on the Definite Direction Growth of Carbon Nanotubes by the Microwave Plasma-Enhanced Chemical Vapro Phase Deposition

One-dimensional SiC Nanostructures: Designed Growth, Properties, and Applications

Experimental and Simulation Research on the Preparation of Carbon Nano-Materials by Chemical Vapor Deposition

Study of Controlled Growth of Carbon Nanotubes in Microstructures at Low Temperature

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Synthesis and characterization of several one-dimensional nanomaterials.

Kinetics of Graphene and 2D Materials Growth

In situ growth of CNTs on carbon fiber by chemical vapor deposition

Growth of Single-Walled Carbon Nanotubes on Surface with Controlled Structures

First-Principles Investigations on the Adsorption and Diffusion of Carbon Atoms on the Surface and in the Subsurface of Co (111) Related to the Growth of Graphene

How Catalysts Affect the Growth of Single-Walled Carbon Nanotubes on Substrates

Achievements and Challenges of Graphene Chemical Vapor Deposition Growth

Research Progress in Growth of One-Dimensional ZnO Nanostructures and Preparing Methods of Related Devices

Bandgap-Coupled Template Autocatalysis toward the Growth of High-Purity sp<SUP>2</SUP> Nanocarbons

Carbon fiber-promoted activation of catalyst for efficient growth of single-walled carbon nanotubes

Current Progress in the Chemical Vapor Deposition of Type-Selected Horizontally Aligned Single-Walled Carbon Nanotubes.

From two-dimensional to one-dimensional structures: SiC nano-whiskers derived from graphene via a catalyst-free carbothermal reaction