Effect of Al-doping on the electronic structure and magnetic properties of Fe2Si

Rui-jie LI,Yin-ye YANG,Wei-fu CEN,Lin LV,Quan XIE

DOI: https://doi.org/10.19594/j.cnki.09.19701.2018.02.002

2018-01-01

Abstract:The electronic structure and magnetic properties of undoped and Al-doped Fe2Si systems have been calculated by the first-principles pseudo-potential method. The results show that both the undoped and Al-doped Fe2Si systems are half-metallic ferromagnet with metal structure under spin-up. The spin-down band structure of undoped Fe2Si system exhibits an indirect semiconductor characteristic with a band-gap value of 0.464 eV; the Al-doped Fe2Si system exhibits a direct semiconductivity characteristic with a band-gap of 0.541 eV. Al doping decreases the magnetic moment of each atom and the total magnetic moment of Fe2Si system, increases both the band-gap value and increases the corresponding half-metal gap, and also it makes the spin-down parts of the system change from indirect to direct band-gap semiconductors. The half-metallic and magnetic properties of Fe2Si systems are mainly derived from the d-d exchange between Fe-3d electrons, p-d hybridization between Si-3p and Fe-3d electrons. Therefore, doping is an effective mean for regulating the electromagnetic properties of half-metallic ferromagnet Fe2Si.