Abstract:Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 < x < 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.

Electronic structure and magnetic properties of Si doped AlFe2Ge full-Heusler

Electronic structure and magnetism of Fe3Al1−xSix alloys

Electronic and magnetic properties of Co2Fe(Ga1−xSix) and Co2Fe(Al1−ySiy) Heusler alloys with high Curie temperature

Effect of Si on the Structure and Magnetic Properties of Sm2Fe17 Compounds

Magnetism and electronic structure of CoFeCrX (X = Si, Ge) Heusler alloys

Study of half metallicity, structural and mechanical properties in inverse Heusler alloy Mn2ZnSi(1- x)Ge x and a superlattice

Structural and magnetic properties of Pr5Si3-xGex compounds

Temperature dependence of magnetoelastic properties of Fe 100 − xSix

Investigation on crystal structure, electrical and magnetic properties of CeAl(Si1-xGex)

Entropy Changes Accompanying the Magnetic Phase Transitions in Low Si-doped Ce2Fe17−xSix Alloy

Microscopic model for the semiconductor-to-ferromagnetic-metal transition in FeSi$_{1-x}$Ge$_{x}$ Alloys

Influence of Ge-doping on the collinear and non-collinear antiferromagnetic phases of Mn 5 Si 3 alloy

Structural, Electronic, Half-Metallic and Thermoelectric Properties of Quaternary Heusler Alloys AgCoFeZ (Z = Al, Ga, Si, Ge, and Sn), NiFeCrZ(Z = Al, Si, Ge, In) and NdCoMnGa: a First Principles Study

Asymmetric Interfaces in Epitaxial Off-Stoichiometric Fe3+ xSi1- x/Ge/Fe3+ xSi1- x Hybrid Structures: Effect on Magnetic and Electric Transport Properties

Antiferromagnetic-to-ferromagnetic Transition in the GdNiSi1 − xAlx Compound

Effect of Si alloying on the structural, thermal expansion, and magnetic properties of FeCoNiAlSix high-entropy alloys

Multiple magnetic interactions and large inverse magnetocaloric effect in TbSi and TbSi$_{0.6}$Ge$_{0.4}$

First-principles calculation of electronic density of states and Seebeck coefficient in transition-metal-doped Si-Ge alloys

Ensemble averages of ab initio optical, transport, and thermoelectric properties of hexagonal Si$_x$Ge$_{1-x}$ alloys

Tunable rectification and magnetoresistance behaviors of ferromagnetic pn diode based on (Fe, Al)-doped SiGe with enhanced room-temperature magnetization

First-principles study on the magnetic properties of six potential half-metallic ferromagnets: alkaline-earth (Ca, Sr) doped XC (X=Si, Ge, Sn)