Abstract:Thin films of BaxSr1-xTiO3 (BST) serial materials have the advantages of adjustable tunability and are good candidates for the application in DRAM and microwave devices. However, these films usually have loss tangent higher than the order of 0.01 at microwave frequencies. To improve the crystal structures and suppress the microwave losses, an interlayer material with good microwave properties can be used. In this present work, a low loss Ba(Mg1/3Ta2/3)O-3 (BMT) thin buffer layer with varying thickness and its effect on the microwave properties of Ba0.4Sr0.6TiO3 thin films is investigated. Moreover, to overcome the spatial limit in the traditional microwave measurement, a novel technique, evanescent microwave probe (EMP) method, is used to directly probe the microwave dielectric properties of the films. This technique also provides the capability to study the dielectric mechanism in micro-scale region.Pulsed laser deposition technique was used to synthesize thin films. The films shows (111) preferably oriented growth of BST films with the introduction of BMT layer for the films grown on sapphire substrates. As the thickness of BMT increases, this behavior is more obvious. The microwave dielectric constants (epsilon) and dielectric losses (tan delta) of the films grown on sapphire substrates have been measured by EMP. The dielectric constants of BST thin films decrease monotonously with the increase of BMT thickness. In contrast, the tan delta shows a discontinuity variation when the BMT buffer layer is deposited for 10-20 minutes.

High Frequency Characteristic of Ba1-xSxTiO3 Thin Film

Determination Of Refractive Indices And Thicknesses Of Ba0.7sr0.3tio3 Films With And Without Mgo (001) Buffer Layer On Silicon Substrate

Preparation and Characterization of Ba1−xSrxTiO3 Thin Films Deposited on Pt/SiO2/Si by Sol–gel Method

Textured BST Thin Film on Silicon Substrate: Preparation and Its Applications for High Frequency Tunable Devices

Microstructures and ferroelectric properties of Ba0.6Sr0.4TiO3 thin films

Enhanced Piezoresponse and Dielectric Properties for Ba1-XSrXTiO3 Composition Ultrathin Films by the High-Throughput Method

Recent Progress of (ba,sr)tio 3 Thin Films for Tunable Microwave Devices

Manipulation of phase transitions and electrical properties of Ba<sub>1-x</sub>Sr<sub>x</sub>TiO<sub>3</sub> thin films through orientation engineering

High tunabilty Ba 0.6 Sr 0.4 TiO 3 thin films fabricated on Pt–Si substrates with La 0.5 Sr 0.5 CoO 3 buffer layer

Characteristics of Ba0.8sr0.2tio3 Ferroelectric Thin Films by Rf Magnetron Sputtering

Structural and Optical Properties of BaxSr1−xTiO3 Thin Films on Indium Tin Oxide/quartz Substrates Prepared by Radio-Frequency Magnetron Sputtering

FERROELECTRIC PROPERTIES OF Ba0.8Sr0.2TiO3 THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

Sintering Behavior and Dielectric Property of BST-BZN Composite Ceramics

The interfacial characteristics of Ba0.6Sr0.4TiO 3 films deposited by radio frequency magnetron sputtering

Effects of Ba2+/Sr2+ Ratio on the Microstructure, Dielectric and Ferroelectric Properties of Ba X Sr(1−x)TiO3 Films Prepared by Micro-Arc Oxidation

Microstructure and Electrical Property of BaxSr1-xTiO3 Ferroelectric Thin Film Prepared by Microarc Oxidation

Sol-Gel Preparation and Characterization of Ba0.65sr0.35(Ti0.95sn0.05)O-3 Thin Films

Effect of Film Thickness on Structure and Dielectric Properties of Yttrium-Doped Ba0.6Sr0.4TiO3 Films

High Pyroelectric Ba0.658r0.35TiO3 Thin Films with Ba0.65Sr0.35TiO3 Buffer

Microwave Properties of Bst and Bst/Bmt Thin Films Grown on Sapphire Substrate by Evanescent Microwave Probe

Dielectric Properties and Microstructures of Ba 1−x Sr X TiO 3 Epitaxial Thin Films with Compositional Gradients Normal to the Substrates