Modeling of Photodiode for CMOS Image Sensor

Zhen QIN,Zulun LIN,Xiangping YE,Kangcheng QI,Xiaoju WANG
DOI: https://doi.org/10.3969/j.issn.1005-9490.2014.06.006
2014-01-01
Abstract:In order to research on the photoelectric conversion phenomena of photodiode for CMOS image sensor,we construct an accurate and reasonable mathematical-physical model. We utilize the minority carrier equilibrium conti-nuity equations to establish an one-dimensional physical model of photodiode. By means of MATLAB,the relation-ship between responsivity and wavelength of photodiode( including three types:two-layer structure of n+/p-sub type and n-well/p-sub type,and three-layer structure of p+/n-well/p-sub type) is found out. Finally,the simulation re-sults are analyzed and compared with practical data. We confirmed the model can basically reflect the actual physi-cal situation.
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