Abstract:Low-pressure inductively coupled plasma (ICP) is promising for space electric propulsion. For the first time, an implicit electromagnetic particle-in-cell Monte Carlo collision model based on the alternating-direction-implicit finite-difference time-domain (ADI-FDTD) method is developed to investigate low-pressure xenon plasma characteristics of a miniature ICP source. The induced simulated electric field is well consistent with that calculated by the finite element method, indicating that this method can provide an accurate estimation of the electromagnetic field. The simulation time step used in the ADI-FDTD method is no longer restricted by the Courant–Friedrichs–Lewy constraints. Compared with the FDTD method, the ADI-FDTD method increases the size of the time step and significantly improves computational efficiency. The method is validated by comparing the simulated and measured electron density and plasma potential profile and reasonable agreement is reached. Therefore, the model is used to investigate the temporal and spatial distribution of plasma properties and the influence of the current amplitude of radio frequency (RF) coil, applied frequency of RF coil and neutral gas pressure on the plasma dynamics in the ionization chamber of a miniature gridded RF ion thruster. To explain the influence of the operating parameters, a concept called 'the energy relaxation characteristics of electrons in response to the change of electric field' is proposed and verified. The simulations also find that the oscillation frequency of plasma properties is twice the applied frequency of RF coil. The oscillation characteristics reveal the dynamic energy balance in the ICP. The experiment on the gridded RF ion thruster BHRIT-4 confirms the oscillation by measuring the plasma sheath potential.

Simulation of Plasma Distributing in ICP Etching

Three-Dimensional Discharge Simulation of Inductively Coupled Plasma (icp) Etching Reactor

Two-Dimensional Discharge Simulation of Inductively Coupled Plasma Etcher

Three-Dimensional Discharge Simulation of Inductively Coupled Plasma Etcher

Simulation of SiO2 etching in an inductively coupled CF4 plasma

Fluid Model of Inductively Coupled Plasma Etcher Based on Comsol

Simulation of SiO<sub>2</sub> etching in an inductively coupled CF<sub>4</sub> plasma

Two-Dimensional Simulation of Inductively Coupled Plasma Based on Comsol and Comparison with Experimental Data

Gas Flow Simulation Research on Reaction Chamber of ICP Etcher

The Effect of Discharge Conditions of ICP Etching Reactor on Plasma Parameters

Simulation of Discharge Characteristics of Capacitively Coupled Plasma

Kinetic simulations of low-pressure inductively coupled plasma: an implicit electromagnetic PIC/MCC model with the ADI-FDTD method

Modeling and Simulation of Ion-Filtered Inductively Coupled Plasma Using Argon Plasma

Two-dimensional Model and Experimental Comparison of an Inductively Coupled Plasma

Numerical Simulation of Plasma Plume with an Insulated Wall in Sheath Region Using a DSMC-PIC Parallel Algorithm

Parametric Study on Suspension Behavior in an Inductively Coupled Plasma

REACTION SIMULATION AND EXPERIMENT OF A Cl2/Ar INDUCTIVELY COUPLED PLASMA FOR ETCHING OF SILICON

Influence of Configurations of Chamber and Coil on Uniformity of Plasma Distribution for Inductively Coupled Plasma Etcher

Ion energy distribution functions in a dual-frequency low-pressure capacitively-coupled plasma: experiments and particle-in-cell simulation

Modeling Approach and Analysis of the Structural Parameters of an Inductively Coupled Plasma Etcher Based on a Regression Orthogonal Design

Numerical Simulation of Radio Frequency Induction Plasma Spray Processing