Magical Quenching Effect of Gradient Band Gap CdSSe Nanowire

Dunwei LIU,Guangli YUAN,Huiyao AN,Xuemei SHI,Tao YU

DOI: https://doi.org/10.16818/j.issn1001-5868.2018.02.013

2018-01-01

Abstract:The method of vapor and temperature gradient distribution was used to grow nanowire.In 750～950℃ quartz tube,by means of the gold catalysis,CdSSe semiconductor nanowires of 310μm gradient band gap were grown.Using the evanescent wave coupling method to guide wave excitation,the quenching effect of different component parts of the nanowire was studied.It is found that when the power injection is below 10-8 W,the quenching degree will increase with increasing light intensity of different band gap nanowires.However,the quenching degree peak of the nanowires with 90％ S elements proportion arrivals the earliest.And even under 10-6 W injection light,the quenching degree peak of Se element still does not appear.The reason is that with the increasing of S elements,more recombination centers turn into the trap energy level centers,so more electrons can jump to the conduction band.The nanowire with gradient band gap fabricated with electrodes can be used to make high resolution infrared detectors,and provide convenience for detecting the defect level of semiconductor materials effectively.