Burbot, Lota lota, L., larvae requirements for Artemia sp. nauplii during experimental rearing in laboratory conditions.

K. Palińska-Żarska,D. Żarski,I. Trąbska,S. Krejszeff,B. Łaczyańska,R. Deptuła,D. Kucharczyk

Abstract:

What problem does this paper attempt to address?

Ultrahigh photoconductivity of bandgap-graded CdS x Se 1 − x nanowires probed by terahertz spectroscopy

Hongwei Liu,Junpeng Lu,Zongyin Yang,Jinghua Teng,Lin Ke,Xinhai Zhang,Limin Tong,Chorng Haur Sow

DOI: https://doi.org/10.1038/srep27387

IF: 4.6

2016-01-01

Scientific Reports

Abstract:Superiorly high photoconductivity is desirable in optoelectronic materials and devices for information transmission and processing. Achieving high photoconductivity via bandgap engineering in a bandgap-graded semiconductor nanowire has been proposed as a potential strategy. In this work, we report the ultrahigh photoconductivity of bandgap-graded CdS x Se 1 − x nanowires and its detailed analysis by means of ultrafast optical-pump terahertz-probe (OPTP) spectroscopy. The recombination rates and carrier mobility are quantitatively obtained via investigation of the transient carrier dynamics in the nanowires. By analysis of the terahertz (THz) spectra, we obtain an insight into the bandgap gradient and band alignment to carrier transport along the nanowires. The demonstration of the ultrahigh photoconductivity makes bandgap-graded CdS x Se 1 − x nanowires a promising candidate as building blocks for nanoscale electronic and photonic devices.
Bandgap-graded CdS(x)Se(1-x) Nanowires for High-Performance Field-Effect Transistors and Solar Cells.

Liang Li,Hao Lu,Zongyin Yang,Limin Tong,Yoshio Bando,Dmitri Golberg

DOI: https://doi.org/10.1002/adma.201204434

IF: 29.4

2012-01-01

Advanced Materials

Abstract:Advanced MaterialsVolume 25, Issue 8 p. 1109-1113 Communication Bandgap-Graded CdSxSe1–x Nanowires for High-Performance Field-Effect Transistors and Solar Cells Liang Li, Corresponding Author Liang Li lli@suda.edu.cn liang.li0216@gmail.com Department of Physics, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, P. R. ChinaDepartment of Physics, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, P. R. China.Search for more papers by this authorHao Lu, Hao Lu Department of Physics, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, P. R. ChinaSearch for more papers by this authorZongyin Yang, Zongyin Yang Department of Optical Engineering, State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, P. R. ChinaSearch for more papers by this authorLimin Tong, Limin Tong Department of Optical Engineering, State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, P. R. ChinaSearch for more papers by this authorYoshio Bando, Yoshio Bando International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, JapanSearch for more papers by this authorDmitri Golberg, Dmitri Golberg International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, JapanSearch for more papers by this author Liang Li, Corresponding Author Liang Li lli@suda.edu.cn liang.li0216@gmail.com Department of Physics, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, P. R. ChinaDepartment of Physics, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, P. R. China.Search for more papers by this authorHao Lu, Hao Lu Department of Physics, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, P. R. ChinaSearch for more papers by this authorZongyin Yang, Zongyin Yang Department of Optical Engineering, State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, P. R. ChinaSearch for more papers by this authorLimin Tong, Limin Tong Department of Optical Engineering, State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, P. R. ChinaSearch for more papers by this authorYoshio Bando, Yoshio Bando International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, JapanSearch for more papers by this authorDmitri Golberg, Dmitri Golberg International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, JapanSearch for more papers by this author First published: 10 December 2012 https://doi.org/10.1002/adma.201204434Citations: 69Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract CdSxSe1–x nanowires with a graded bandgap along the length direction were utilized for field-effect transistors and Schottky junction solar cells. This novel type of nanowires suggests promising electronic and optoelectronic applications in the future. Citing Literature Supporting Information As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Filename Description adma_201204434_sm_suppl.pdf66.3 KB suppl Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article. Volume25, Issue8February 25, 2013Pages 1109-1113 RelatedInformation
Broadly Defining Lasing Wavelengths in Single Bandgap-Graded Semiconductor Nanowires.

Zongyin Yang,Delong Wang,Chao Meng,Zhemin Wu,Yong Wang,Yaoguang Ma,Lun Dai,Xiaowei Liu,Tawfique Hasan,Xu Liu,Qing Yang

DOI: https://doi.org/10.1021/nl500432m

IF: 10.8

2014-01-01

Nano Letters

Abstract:Designing lasing wavelengths and modes is essential to the practical applications of nanowire (NW) lasers. Here, according to the localized photoluminescence spectra, we first demonstrate the ability to define lasing wavelengths over a wide range (up to 119 nm) based on an individual bandgap-graded CdSSe NW by forward cutting the NW from CdSe to CdS end. Furthermore, free spectral range (FSR) and modes of the obtained lasers could be controlled by backward cutting the NW from CdS to CdSe end step-by-step. Interestingly, single-mode NW laser with predefined lasing wavelength is realized in short NWs because of the strong mode competition and increase in FSR. Finally, the gain properties of the bandgap-graded NWs are investigated. The combination of wavelength and mode selectivity in NW lasers may provide a new platform for the next generation of integrated optoelectronic devices.
Nanowires: Bandgap‐Graded CdSxSe1–x Nanowires for High‐Performance Field‐Effect Transistors and Solar Cells (adv. Mater. 8/2013)

Liang Li,Hao Lu,Zongyin Yang,Limin Tong,Yoshio Bando,Dmitri Golberg

DOI: https://doi.org/10.1002/adma.201370047

IF: 29.4

2013-01-01

Advanced Materials

Abstract:Bandgap-graded CdSxSe1−x nanowires are utilized by Liang Li and co-workers on page 1109 for high-performance field-effect transistors and Schottky solar cells. The photovoltaic mechanism is ascribed to the Schottky junction effect and the “type II” band structure which maximizes the driving force for the injection of photoexcited electrons into the CdS through CdSxSe1-x from the CdSe by creating an optimized band alignment.
Spatial bandgap engineering along single alloy nanowires.

Fuxing Gu,Zongyin Yang,Huakang Yu,Jinyou Xu,Pan Wang,Limin Tong,Anlian Pan

DOI: https://doi.org/10.1021/ja110092a

IF: 15

2011-01-01

Journal of the American Chemical Society

Abstract:Bandgap engineering of semiconductor nano-wires is important in designing nanoscale multifunctional optoelectronic devices. Here, we report a facile thermal evaporation method, and realize the spatial bandgap engineering in single CdS1-xSex alloy nanowires. Along the length of these achieved nanowires, the composition can be continuously tuned from x = 0 (CdS) at one end to x = 1 (CdSe) at the other end, resulting in the corresponding bandgap (light emission wavelength) being modulated gradually from 2.44 eV (507 nm, green light) to 1.74 eV (710 nm, red light). In spite of the existing composition (crystal lattice) transition along the length, these multicolor nanowires still possess high-quality crystallization. These bandgap engineered nanowires will have promising applications in such as multicolor display and lighting, high-efficiency solar cells, ultrabroadly spectral detectors, and biotechnology.
On-wire bandgap engineering via a magnetic-pulled CVD approach and optoelectronic applications of one-dimensional nanostructures

Xia Shen,Pu Li,Pengfei Guo,Kin Man Yu

DOI: https://doi.org/10.1088/1361-6528/ac800b

IF: 3.5

2022-08-01

Nanotechnology

Abstract:Since the emergence of one-dimensional nanostructures, in particular the bandgap-graded semiconductor nanowires/ribbons or heterostructures, lots of attentions have been devoted to unraveling their intriguing properties and finding applications for future developments in optical communications and integrated optoelectronic devices. In particular, the ability to modulate the bandgap along a single nanostructure greatly enhances their functionalities in optoelectronics, and hence these studies are essential to pave the way for future high-integrated devices and circuits. Herein, we focus on a brief review on recent advances about the synthesis through a magnetic-pulled chemical vapor deposition approach, crystal structure and the unique optical and electronic properties of on-nanostructures semiconductors, including axial nanowire heterostructures, asymmetrical/symmetric bandgap gradient nanowires, lateral heterostructure nanoribbons, lateral bandgap graded ribbons. Moreover, recent developments in applications using low-dimensional bandgap modulated structures, especially in bandgap-graded nanowires and heterostructures, are summarized, including multicolor lasers, waveguides, white-light sources, photodetectors, and spectrometers, where the main strategies and unique features are addressed. Finally, future outlook and perspectives for the current challenges and the future opportunities of one-dimensional nanostructures with bandgap engineering are discussed to provide a roadmap future development in the field.
On-nanowire Spatial Band Gap Design for White Light Emission.

Zongyin Yang,Jinyou Xu,Pan Wang,Xiujuan Zhuang,Anlian Pan,Limin Tong

DOI: https://doi.org/10.1021/nl203529h

IF: 10.8

2011-01-01

Nano Letters

Abstract:We demonstrated a substrate-moving vapor-liquid-solid (VLS) route for growing composition gradient ZnCdSSe alloy nanowires. Relying on temperature-selected composition deposition along their lengths, single tricolor ZnCdSSe alloy nanowires with engineerable band gap covering the entire visible range were obtained. The photometric property of these tricolor nanowires, which was determined by blue-, green-, and red-color emission intensities, can be in turn controlled by their corresponding emission lengths. More particularly, under carefully selected growth conditions, on-nanowire white light emission has been achieved. Band-gap-engineered semiconductor alloy nanowires demonstrated here may find applications in broad band light absorption and emission devices.
Engineering III–V Semiconductor Nanowires for Device Applications

Jennifer Wong‐Leung,Inseok Yang,Ziyuan Li,Siva Krishna Karuturi,Lan Fu,Hark Hoe Tan,Chennupati Jagadish

DOI: https://doi.org/10.1002/adma.201904359

IF: 29.4

2019-10-17

Advanced Materials

Abstract:<p>III–V semiconductor nanowires offer potential new device applications because of the unique properties associated with their 1D geometry and the ability to create quantum wells and other heterostructures with a radial and an axial geometry. Here, an overview of challenges in the bottom‐up approaches for nanowire synthesis using catalyst and catalyst‐free methods and the growth of axial and radial heterostructures is given. The work on nanowire devices such as lasers, light emitting nanowires, and solar cells and an overview of the top‐down approaches for water splitting technologies is reviewed. The authors conclude with an analysis of the research field and the future research directions.</p>

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Vapor-phase Synthesis of One-Dimensional ZnS, CdS, and ZnxCd1–xS Nanostructures

Tianyou Zhai,Xiaosheng Fang,Haibo Zeng,Xijin Xu,Yoshio Bando,Dmitri Golberg

DOI: https://doi.org/10.1351/pac-con-09-09-18

2010-01-01

Pure and Applied Chemistry

Abstract:One-dimensional (1D) nanostructures have received prime attention due to their high potential in understanding fundamental physical concepts and constructing nanoscale electronic devices. ZnS and CdS, the well-known direct and wide bandgap semiconductors, have recently attracted significant research interest due to their special properties and applications in sensing, optoelectronics, piezoelectronics, and lasing. This article reviews the most recent activities in ZnS and CdS nanostructures, with an emphasis on the authors’ own results, and on 1D ZnS and CdS nanostructures, especially those synthesized using vapor deposition techniques. The review begins with a survey of ZnS and CdS nanostructures, and then is primarily focused on their 1D nanostructures, syntheses, characterizations, formation mechanisms, and optical and field-emission (FE) properties. Additionally, developments of ZnxCd1–xS composite nanostructures, including nanocombs and zigzag nanowires, are also discussed. Finally, we conclude this review with the perspectives and outlook on the future developments in this field.
Doping Dependent Crystal Structures and Optoelectronic Properties of N-Type Cdse:Ga Nanowries

Zhizhong Hu,Xiujuan Zhang,Chao Xie,Chunyan Wu,Xiaozhen Zhang,Liang Bian,Yiming Wu,Li Wang,Yuping Zhang,Jiansheng Jie

DOI: https://doi.org/10.1039/c1nr10619h

IF: 6.7

2011-01-01

Nanoscale

Abstract:Although CdSe nanostructures possess excellent electrical and optical properties, efforts to make nano-optoelectronic devices from CdSe nanostructures have been hampered by the lack of efficient methods to rationally control their structural and electrical characteristics. Here, we report CdSe nanowires (NWs) with doping dependent crystal structures and optoelectronic properties by using gallium (Ga) as the efficient n-type dopant via a simple thermal co-evaporation method. The phase change of CdSe NWs from wurtzite to zinc blende with increased doping level is observed. Systematical measurements on the transport properties of the CdSe:Ga NWs reveal that the NW conductivity could be tuned in a wide range of near nine orders of magnitude by adjusting the Ga doping level and a high electron concentration up to 4.5 x 10(19) cm(-3) is obtained. Moreover, high-performance top-gate field-effect transistors are constructed based on the individual CdSe:Ga NWs by using high-kappa HfO(2) as the gate dielectric. The great potential of the CdSe:Ga NWs as high-sensitive photodetectors and nanoscale light emitters is also exploited, revealing the promising applications of the CdSe:Ga NWs in new-generation nano-optoelectronics.
Bandgap engineering of high mobility two-dimensional semiconductors toward optoelectronic devices

Qiaoyan Hao,Peng Li,Jidong Liu,Jiarui Huang,Wenjing Zhang

DOI: https://doi.org/10.1016/j.jmat.2022.11.009

IF: 8.589

2022-12-18

Journal of Materiomics

Abstract:Highlights • High-mobility 2D semiconductors are competitive candidates for constructing next-generation optoelectronic devices. • Bandgap engineering allows precise control of the intrinsic bandgap of 2D materials at the nanoscale. • Several strategies for bandgap engineering are elaborated by incorporating our recent research on InSe and PdSe 2 . Over the last few years, great advances have been achieved in exploration of high-mobility two-dimensional (2D) semiconductors such as metal chalcogenide InSe and noble-transition-metal dichalcogenide PdSe 2 . These materials are competitive candidates for constructing next-generation optoelectronic devices owing to their unique crystalline and electronic structures. Moreover, the optical and electronic properties of 2D materials can be efficiently modified via precisely engineering their band structures, which is critical for widening specific applications ranging from high-performance optoelectronics to catalysis and energy harvesting. In this review, we focus on the progress in bandgaps engineering of newly emerging high-mobility 2D semiconductors and their applications in optoelectronic devices, incorporating our recent study in the InSe and PdSe 2 systems. First of all, we discuss the structure-property relationship of typical high-mobility 2D semiconductors (InSe and PdSe 2 ). Next, we analyze several viable strategies for bandgap engineering, including thickness, strain or pressure, alloying, heterostructure, surface modification, intercalation, and so on. Furthermore, we summarize the optoelectronic devices fabricated with such high-mobility 2D semiconductors. The conclusion and outlook in this topic are finally presented. This review aims to provide valuable insights in bandgap engineering of newly emerging 2D semiconductors and explore their potential in future optoelectronic applications. Graphical abstract Download : Download high-res image (315KB) Download : Download full-size image

materials science, multidisciplinary,chemistry, physical,physics, applied
Semiconductor Nanowire Light Emitting Diodes Grown on Metal: A Direction towards Large Scale Fabrication of Nanowire Devices

A. T. M. Golam Sarwar,Santino D. Carnevale,Fan Yang,Thomas F. Kent,John J. Jamison,David W. McComb,Roberto C. Myers

DOI: https://doi.org/10.48550/arXiv.1506.03849

2015-06-12

Abstract:Bottom up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating dislocations. The resulting nanowires are used to fabricate light emitting diodes (LEDs), lasers, solar cells and sensors. However, expensive single crystalline substrates are commonly used as substrates for nanowire heterostructures as well as for epitaxial devices, which limits the manufacturability of nanowire devices. Here, we demonstrate nanowire LEDs directly grown and electrically integrated on metal. Optical and structural measurements reveal high-quality, vertically-aligned GaN nanowires on molybdenum and titanium films. Transmission electron microscopy confirms the composition variation in the polarization-graded AlGaN nanowire LEDs. Blue to green electroluminescence is observed from InGaN quantum well active regions, while GaN active regions exhibit ultraviolet emission. These results demonstrate a pathway for large-scale fabrication of solid state lighting and optoelectronics on metal foils or sheets.

Materials Science
Characterization, Cathodoluminescence and Field-Emission Properties of Morphology-Tunable CdS Micro/nanostructures

Tianyou Zhai,Xiaosheng Fang,Xijin Xu,Yoshio Bando,Dmitri Golberg

DOI: https://doi.org/10.1002/adfm.200900295

IF: 19

2009-01-01

Advanced Functional Materials

Abstract:High-quality, uniform CdS one-dimensional (1D) micro/nanostructures with different morphologies, e.g. microrods, sub-microwires and nanotips, are fabricated through a facile and effective thermal evaporation process. Their structural, cathodoluminescence and field-emission (FE) properties are systematically investigated. Microrods and nanotips exhibit sharp near band edge (NBE) emission and broad deep level (DL) emission, whereas sub-microwires show only the DL emission. A significant decrease in a DL/NBE intensity ratio is observed along a tapered nanotip towards a smaller diameter part. This behavior is understood under consideration of defect concentrations in the nanotips, as analyzed with high-resolution transmission electron microscopy (HRTEM). Field-emission (FE) measurements show that the nanotips possess best FE characteristics with a relatively low turn-on field of 5.28 V/mu m and the highest field-enhancement factor of 4819 among all 1D CdS nanostructures reported to date. The field-enhancement factor, turn-on and threshold fields are discussed related to structure morphology and vacuum gap variations under emission.
Development and Applications of the Heterostructures Synthesis Based on CdS Nanowires

Shancheng Yan,Yi Shi,Litao Sun,Wenfu Yan,Mi Zhou,Dong Hu,Jiansheng Wu,Yunlong Wang,Beibei Shi,Xinke Lan

DOI: https://doi.org/10.1166/jnn.2013.6845

2013-01-01

Journal of Nanoscience and Nanotechnology

Abstract:Semiconducting nanowire heterostructures are of particular interest because of their fascinating properties and potential applications in the field of nanoscale science. CdS, with a direct bandgap of 2.42 eV, is considered to be an excellent material for various optoelectronic applications in the visible range of the electromagnetic spectrum. On account of this, the diverse heterostructures based on CdS nanowires have drawn great attention owing to their novel properties. Here, we focus on recent routes used to synthesize diverse heterostructures based on CdS nanowires and the emergent properties of the one-dimensional nanowires heterostructures, and discuss their potential applicability in different fields. In particular, the mechanisms of various synthetic methods for the heterostructure based on the CdS nanowires are discussed detailedly.
Planar Growth, Integration, and Applications of Semiconducting Nanowires

Ying Sun,Taige Dong,Linwei Yu,Jun Xu,Kunji Chen

DOI: https://doi.org/10.1002/adma.201903945

IF: 29.4

2020-01-01

Advanced Materials

Abstract:Silicon and other inorganic semiconductor nanowires (NWs) have been extensively investigated in the last two decades for constructing high-performance nanoelectronics, sensors, and optoelectronics. For many of these applications, these tiny building blocks have to be integrated into the existing planar electronic platform, where precise location, orientation, and layout controls are indispensable. In the advent of More-than-Moore's era, there are also emerging demands for a programmable growth engineering of the geometry, composition, and line-shape of NWs on planar or out-of-plane 3D sidewall surfaces. Here, the critical technologies established for synthesis, transferring, and assembly of NWs upon planar surface are examined; then, the recent progress of in-plane growth of horizontal NWs directly upon crystalline or patterned substrates, constrained by using nanochannels, an epitaxial interface, or amorphous thin film precursors is discussed. Finally, the unique capabilities of planar growth of NWs in achieving precise guided growth control, programmable geometry, composition, and line-shape engineering are reviewed, followed by their latest device applications in building high-performance field-effect transistors, photodetectors, stretchable electronics, and 3D stacked-channel integration.
Laser-Driven Growth of Semiconductor Nanowires from Colloidal Nanocrystals via the Young-Laplace Effect

Elena P. Pandres,Matthew J. Crane,E. James Davis,Peter J. Pauzauskie,Vincent C. Holmberg

DOI: https://doi.org/10.48550/arXiv.2007.09305

2020-07-18

Abstract:The ability to produce nanowires through vapor- and solution-based processes has propelled nanowire material systems toward a wide range of technological applications. Conventional, vapor-based nanowire syntheses have enabled precise control over nanowire composition and phase. However, vapor-based nanowire growth employs batch processes with specialized pressure management systems designed to operate at high temperatures, limiting throughput. More recently developed solution-based nanowire growth processes have improved scalability but can require even more extensive pressure and temperature management systems. Here, we demonstrate a continuous-flow, solution-based nanowire growth process that utilizes the large Young-Laplace interfacial surface pressures and collective heating effects of colloidal metal nanocrystals under irradiation to drive semiconductor nanowire growth photothermally without the need for high-pressure or high-temperature equipment. In this process, a laser irradiates a solution containing metal nanocrystals and semiconductor precursors. Upon light absorption, the metal nanocrystals heat rapidly, inducing semiconductor precursor decomposition and nanowire growth. This process is performed on a benchtop in simple glassware under standard conditions. To demonstrate the generality of this technique, we synthesized three distinct semiconductor nanowire material systems: bismuth-seeded germanium nanowires, bismuth-seeded cadmium selenide nanowires, and indium-seeded germanium nanowires. The simplicity and versatility of this process opens the door to a range of experiments and technologies including in-line combinatorial identification of optimized reaction parameters, in situ spectroscopic measurements to study solution-based nanowire growth, and the potential production of nanowires with complex compositions or rationally incorporated dopants.

Applied Physics,Mesoscale and Nanoscale Physics
Direct van der Waals epitaxial growth of 1D/2D Sb2Se3/WS2 mixed-dimensional p-n heterojunctions

Guangzhuang Sun,Bo Li,Jia Li,Zhengwei Zhang,Huifang Ma,Peng Chen,Bei Zhao,Ruixia Wu,Weiqi Dang,Xiangdong Yang,Xuwan Tang,Chen Dai,Ziwei Huang,Yuan Liu,Xidong Duan,Xiangfeng Duan

DOI: https://doi.org/10.1007/s12274-019-2364-1

IF: 9.9

2019-03-28

Nano Research

Abstract:The mixed-dimensional integration of two-dimensional (2D) materials with non-2D materials can give rise to prominent advances in performance or function. To date, the mixed-dimensional one-dimensional (1D)/2D heterostructures have been fabricated using various physical assembly approaches. However, direct epitaxial growth method which has notable advantages in preparing large-scale products and obtaining perfect interfaces is rarely investigated. Herein, we demonstrate for the first time the direct synthesis of the 1D/2D mixed-dimensional heterostructures by sequential vapor-phase growth of Sb2Se3 nanowires on WS2 monolayers. X-ray diffraction (XRD) pattern and Raman spectrum confirm the composition of the Sb2Se3/WS2 heterostructures. Transmission electron microscope (TEM) measurement demonstrates high quality of the heterostructures. Electrical transport characterization reveals that Sb2Se3 nanowire exhibits p-type characteristic and that WS2 monolayer exhibits n-type behavior, and that the p-n diode from 1D/2D mixed-dimensional Sb2Se3/WS2 heterostructure possesses obvious current rectification behavior. Optoelectronic measurements of the heterostructures show apparent photovoltaic response with an open-circuit voltage of 0.19 V, photoresponsivity of 1.51 A/W (Vds = 5 V) and fast response time of less than 8 ms. The van der Waals epitaxial growth mode of Sb2Se3 nanowires on WS2 monolayers is verified by stripping the Sb2Se3 nanowire from the heterostructures using tape. Together, the direct van der Waals epitaxy opens a facile pathway to 1D/2D mixed-dimensional heterostructures for functional electronic and optoelectronic devices.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Growth and Device Application of Cdse Nanostructures

Lijuan Zhao,Linfeng Hu,Xiaosheng Fang

DOI: https://doi.org/10.1002/adfm.201103088

IF: 19

2012-01-01

Advanced Functional Materials

Abstract:Inorganic semiconductor nanostructures have attracted increasing interest in recent years because of their distinguishable role in fundamental studies and technical applications, mainly due to their size‐ and shape‐dependent properties and flexible processing methods. The use of such nanostructures in optic, optoelectric, and piezoelectric prospects is expected to play a crucial role in future nanoscale devices. Cadmium selenide (CdSe), a well‐known direct bandgap II‐VI semiconductor in which the bandgap favors absorption over a wide range of the visible spectrum, has been a promising material for applications in such fields as photodetectors, field‐effect transistors (FETs), field emitters, solar cells, light‐emitting diodes (LEDs), memory devices, biosensors, and biomedical imaging. The research on CdSe nanostructures has made remarkable progress in the last few years. The research activities on CdSe nanostructures including various methods for the synthesis of CdSe nanostructures and the unique properties and device applications of these nanostructures are reviewed. Potential future directions of this research area are also highlighted.
Magical Quenching Effect of Gradient Band Gap CdSSe Nanowire

Dunwei LIU,Guangli YUAN,Huiyao AN,Xuemei SHI,Tao YU

DOI: https://doi.org/10.16818/j.issn1001-5868.2018.02.013

2018-01-01

Abstract:The method of vapor and temperature gradient distribution was used to grow nanowire.In 750～950℃ quartz tube,by means of the gold catalysis,CdSSe semiconductor nanowires of 310μm gradient band gap were grown.Using the evanescent wave coupling method to guide wave excitation,the quenching effect of different component parts of the nanowire was studied.It is found that when the power injection is below 10-8 W,the quenching degree will increase with increasing light intensity of different band gap nanowires.However,the quenching degree peak of the nanowires with 90％ S elements proportion arrivals the earliest.And even under 10-6 W injection light,the quenching degree peak of Se element still does not appear.The reason is that with the increasing of S elements,more recombination centers turn into the trap energy level centers,so more electrons can jump to the conduction band.The nanowire with gradient band gap fabricated with electrodes can be used to make high resolution infrared detectors,and provide convenience for detecting the defect level of semiconductor materials effectively.
Controlled Growth and Characterization Methods of Semiconductor Nanomaterials.

Li-De Zhang,Xiao-Sheng Fang

DOI: https://doi.org/10.1166/jnn.2008.n02

2008-01-01

Journal of Nanoscience and Nanotechnology

Abstract:One-dimensional (1D) semiconductor nanomaterials attract much attention because they are ideal systems for investigation and studying the relationship between properties and structures and having extensive application future in the high technical field. They are expected to play an important role in fabrication of the next generation nanocircuits, nanotools, nanowires lasers, photon tunneling devices, near-field photo-waveguide devices, etc. This article described controlled growth, characterization of structures and morphologies and properties of 1D semiconductor nanomaterials based on our previous works. This article is organized into two parts: The first part is complicated nanostructures of semiconductors, which includes coaxial nanocables, heterostructure nanowires and nanowires with metal-semiconductor junction behavior, hierarchical structures, doping of the nanowires and nanobelts, porous materials and periodically twined nanowires and asymmetrical polytypic nanobelts. The second part contains semiconductor nanoarrays based on anodic alumina membrane (AAM) templates. Finally, we propose that further investigation of the influence of nanomaterial morphologies on properties and how to design the morphology of nanostructures to meet the property requirements of nanodevices are our future research directions in this field.

Burbot, Lota lota, L., larvae requirements for Artemia sp. nauplii during experimental rearing in laboratory conditions.

Ultrahigh photoconductivity of bandgap-graded CdS x Se 1 − x nanowires probed by terahertz spectroscopy

Bandgap-graded CdS(x)Se(1-x) Nanowires for High-Performance Field-Effect Transistors and Solar Cells.

Broadly Defining Lasing Wavelengths in Single Bandgap-Graded Semiconductor Nanowires.

Nanowires: Bandgap‐Graded CdSxSe1–x Nanowires for High‐Performance Field‐Effect Transistors and Solar Cells (adv. Mater. 8/2013)

Spatial bandgap engineering along single alloy nanowires.

On-wire bandgap engineering via a magnetic-pulled CVD approach and optoelectronic applications of one-dimensional nanostructures

On-nanowire Spatial Band Gap Design for White Light Emission.

Engineering III–V Semiconductor Nanowires for Device Applications

Vapor-phase Synthesis of One-Dimensional ZnS, CdS, and ZnxCd1–xS Nanostructures

Doping Dependent Crystal Structures and Optoelectronic Properties of N-Type Cdse:Ga Nanowries

Bandgap engineering of high mobility two-dimensional semiconductors toward optoelectronic devices

Semiconductor Nanowire Light Emitting Diodes Grown on Metal: A Direction towards Large Scale Fabrication of Nanowire Devices

Characterization, Cathodoluminescence and Field-Emission Properties of Morphology-Tunable CdS Micro/nanostructures

Development and Applications of the Heterostructures Synthesis Based on CdS Nanowires

Planar Growth, Integration, and Applications of Semiconducting Nanowires

Laser-Driven Growth of Semiconductor Nanowires from Colloidal Nanocrystals via the Young-Laplace Effect

Direct van der Waals epitaxial growth of 1D/2D Sb2Se3/WS2 mixed-dimensional p-n heterojunctions

Growth and Device Application of Cdse Nanostructures

Magical Quenching Effect of Gradient Band Gap CdSSe Nanowire

Controlled Growth and Characterization Methods of Semiconductor Nanomaterials.