Proximity Effect Correction Technique in Electron-Beam Direct Writing

陈宝钦,任黎明,刘明,王云翔,龙世兵,陆晶,李泠
DOI: https://doi.org/10.3969/j.issn.1674-4926.2003.z1.050
2003-01-01
Chinese Journal of Semiconductors
Abstract:The electron scattering processes are simulated by Monte Carlo method. The production mechanism of proximity effect and effective approaches of proximity effect correction are inVestigated. The experimental results show that proximity effect is a comprehensive phenomenon. It can be reduced and expectant purpose of proximity effect correction can be achieved through optimizing processes.
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