A Review of Proximity Effect Correction in Electron-beam Lithography

Pengcheng Li

DOI: https://doi.org/10.48550/arXiv.1509.05169

2015-09-17

Mesoscale and Nanoscale Physics

Abstract:I review the work of proximity effect correction (PEC) in electron-beam (e-beam) lithography with emphasis on dose modification and shape modification PEC techniques.

What problem does this paper attempt to address?

Three-dimensional Proximity Effect Correction for Large-Scale Uniform Patterns

Q. Dai,S-Y Lee,S-H Lee,B-G Kim,H-K Cho

DOI: https://doi.org/10.1116/1.3660785

2011-01-01

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

Abstract:One of the major limiting factors in electron beam (e-beam) lithography is the geometric distortion of written features due to electron scattering, which is known as the proximity effect. A conventional approach to the proximity effect correction (PEC) is, through 2D simulation, to determine the dose distribution and/or shape modification for each feature in a circuit pattern such that the written pattern is as close to the target pattern as possible. Earlier, it was shown that the 3D PEC, which considers the variation of exposure along the resist-depth dimension, would be necessary for the feature size well below 100 nm. Also, a feature-by-feature correction procedure is too time-consuming to be practical, especially for the 3D PEC of large-scale patterns. In this paper, a new method for the 3D PEC is proposed, which adopts 3D resist profile (instead of 2D exposure distribution) in optimization, but avoids the intensive computation by employing a critical-location-based correction procedure. The proposed method achieves 3D resist profiles closer to the target ones, compared to 2D PEC. The simulation results show that the proposed method has a potential to provide a practical and effective alternative to the conventional approach.
Methods of Proximity Effect Correction in Electron Beam Lithography

XIAO Pei,SUN Xia,YAN Ji-hong,DING Ze-jun

DOI: https://doi.org/10.3969/j.issn.1000-6281.2005.05.003

2005-01-01

Abstract:Proximity effect is one of the most important limitations to the resolution of electron beam lithography.The mechanism of proximity effect was introduced.Some correction methods of proximity effect such as GHOST,pattern area density map and shape modification were described in detail,including its principle,correction procedure and efficiency.The advantages and shortages of these methods were also given.
Feature Point-Based Proximity Effect Correction of Patterns

Wenhao Wang,Kangpeng Huang,Zhensheng Zhang,Xuefeng Song,Siyu Feng,Dapeng Yu

DOI: https://doi.org/10.1109/IWAPS60466.2023.10366159

2023-01-01

Abstract:The proximity effect correction (PEC) of patterns has significant applications in electron beam lithography (EBL) systems that cannot adjust dosage arbitrarily. This paper proposes a PEC method that discretizes the pattern into feature points and compensates for the proximity effect by changing the shape of the design through the movement of these feature points. This method enables PEC for arbitrary patterns, and the precision of the PEC can be tuned by adjusting parameters such as the density of the feature points. Experimental verification of this method was conducted, and the results were consistent with expectations.
Proximity Effect In Electron Beam Lithography

Liming Ren,Baoqin Chen

DOI: https://doi.org/10.1109/icsict.2004.1435073

2004-01-01

Abstract:Proximity effect is the most severe factor that influences the expo sure resolution of electron beam. In this paper.. the mechanism of proximity effect is discussed through Monte Carlo Simulation of the electron scattering processes. And effective approaches of proximity effect correction are proposed. The theoretical results of Monte Carlo simulation and experimental results show that proximity effect is determined by many factors. In addition to the shape, size and packing density, of patterns, proximity effect is also dependent on processes conditions. Only on the basis of optimizing the processes conditions and mask design, the expectant purpose of proximity effect correction by software can be achieved. Proximity effect is effectively reduced through improving mask design, optimizing processes conditions and utilizing, proximity effect correction software.
Experimental Study of Proximity Effect Corrections in Electron Beam Lithography

J ZHU,Z CUI,PD PREWETT

DOI: https://doi.org/10.1117/12.209175

1995-01-01

Abstract:The computer aided proximity effect correction program CAPROX has been used to correct structures written at 20 keV electron beam energy. A new method has been developed to determine proximity parameters for a given e-beam/resist/substrate system. Proximity parameters for PMMA and EBR-9 and chemically amplified negative resist AZPN114 have been determined, and compared with those obtained from the established 'doughnut method'. The new method provides more reliable and accurate values, particularly for the forward scattering range. The dependence of (alpha) , (beta) and (eta) on resist thickness was also measured and the sensitivity of proximity correction using CAPROX to variation in all three scattering parameters was demonstrated. The new method improves CD linewidth linearity and accuracy in the range 0.1 approximately equals 4.0 micrometers , achieving linewidth for both lines and gaps within 100 nm of designed size.
Proximity Effect Correction Technique in Electron-Beam Direct Writing

陈宝钦,任黎明,刘明,王云翔,龙世兵,陆晶,李泠

DOI: https://doi.org/10.3969/j.issn.1674-4926.2003.z1.050

2003-01-01

Chinese Journal of Semiconductors

Abstract:The electron scattering processes are simulated by Monte Carlo method. The production mechanism of proximity effect and effective approaches of proximity effect correction are inVestigated. The experimental results show that proximity effect is a comprehensive phenomenon. It can be reduced and expectant purpose of proximity effect correction can be achieved through optimizing processes.
An Efficient Dose-Compensation Method for Proximity Effect Correction

Wang Ying,Han Weihua,Yang Xiang,Zhang Renping,Zhang Yang,Yang Fuhua

DOI: https://doi.org/10.1088/1674-4926/31/8/086001

2010-01-01

Abstract:A novel simple dose-compensation method is developed for proximity effect correction in electron-beam lithography. The sizes of exposed patterns depend on dose factors while other exposure parameters (including accelerate voltage, resist thickness, exposing step size, substrate material, and so on) remain constant. This method is based on two reasonable assumptions in the evaluation of the compensated dose factor: one is that the relation between dose factors and circle-diameters is linear in the range under consideration; the other is that the compensated dose factor is only affected by the nearest neighbors for simplicity. Four-layer-hexagon photonic crystal structures were fabricated as test patterns to demonstrate this method. Compared to the uncorrected structures, the homogeneity of the corrected hole-size in photonic crystal structures was clearly improved.
Proximity Effects During Mask Fabrication

杜惊雷,石瑞英,崔铮,郭永康

DOI: https://doi.org/10.3969/j.issn.1671-4776.2002.11.009

2002-01-01

Abstract:In this paper,we discuss the influence of the mask fabricated by EBL or laser writ-ing on pattern quality.Distortion effect in optical proximity corrected(OPC)masks on wafer level image has been investigated using combined simulation of photomask patterning process and pro-jection optical lithography.Proximity effects in e-beam lithography or laser direct writing have been taken into account for the generation of mask features.The simulation demonstrated that the OPC compensation features are significantly distorted at mask level.Such distortions have notice-able impact on the wafer level resist images.
Optical Proximity Correction in Laser Direct Writing

Jinglei Du,Qizhong Huang,Jun Yao,Yixiao Zhang,Yongkang Guo,Chuankai Qiu,Zheng Cui

DOI: https://doi.org/10.3321/j.issn:0253-2239.1999.07.017

1999-01-01

Abstract:Proximity effect is an important factor which limits optical lithography resolution, and it also limits the applications of laser direct writing system in submicron and half-submicron optical lithography. The production mechanism of proximity effect in laser direct writing was analyzed, and its differences with projection optical lithography and electron beam lithography were described. A convenient and effective optical proximity correction method was presented.
Optimization of Spatial Dose Distribution for Controlling Sidewall Shape in Electron-beam Lithography

Pengcheng Li

DOI: https://doi.org/10.48550/arXiv.1509.04694

2015-09-08

Abstract:Electron-beam (e-beam) lithography is widely employed in fabrication of 2-D patterns and 3-D structures. A certain type or shape of the sidewall in the remaining resist profile may be desired in an application, e.g., an undercut for lift-off and a vertical sidewall for etching, or required for a device. Also, as the feature size is decreased well below a micron, a small variation of the sidewall slope can lead to a significant (relative) CD error in certain layers of resist. Therefore, it is important to understand effects of spatial dose distribution on sidewall shape and be able to achieve the desired shape. In this study, via simulation, the relationship among the total dose, spatial distribution of dose, developing time and sidewall shape, and performance of the method developed to optimize the dose distribution for a target sidewall shape have been analyzed. The simulation results have been verified through experiments.

Materials Science
Simulation of the Proximity Effect of Electron Beam Lithography

X Sun,SF You,P Xiao,ZJ Ding

DOI: https://doi.org/10.7498/aps.55.148

IF: 0.906

2006-01-01

Acta Physica Sinica

Abstract:Electron beam lithography has high sensitivity since it is free from limitation from diffraction effect. It will be the mostcommon technique of the next generation lithography to replace the conventional optical lithography. The proximity effect is the most important limitation of the sensitivity of lithography,which is simulated with Monte Carlo method in this paper.The influence on proximity effect of the shape and energy of electron beam and the material and depth of substrate is analyzed. The simulation results are compared with the experimental data and are found to fit well. It is found that, the proximity effect shown by Gaussian shaped electron beam is much larger than that by ideal electron beam, and lager atomic number, thicker substrate and lower energy of the electron beam will cause lager proximity effect independently.
Optical Proximity Correction for Submicron Lithography by Laser Direct Writing

YK Guo,JL Du,QZ Huang,J Yao,CK Qiu,Z Cui

DOI: https://doi.org/10.1117/12.354383

1999-01-01

Abstract:Generally, a laser direct writing lithography system can only produce feature sizes larger than its beam spot size. When the feature size is comparable to its spot size, corner rounding and line shortening appears. This is caused by optical proximity effect. The effect is mainly due to light intensity spread in a laser beam which causes the spread of photon energy in resist layer. A new pre-compensation method has been developed to correct the optical proximity effect. The method has been implemented in the ISI-2802 laser direct write system. Feature size down to 0.6 mu m has been produced with the system which normally can only produce 1 mu m lithography without proximity correction.
Edge-based near-field photolithography optical proximity effect correction technique

Jiaxin Ji,Bin Wei,Guangjuan Wen,Zhongwen Lin

DOI: https://doi.org/10.1007/s11082-024-07765-x

IF: 3

2024-11-04

Optical and Quantum Electronics

Abstract:Near-field photolithography can use surface plasmon polaritons to surpass the traditional optical diffraction limit, thus removing the limitation imposed by the light source wavelength on traditional photolithography resolution. However, the optical proximity effect causes uneven patterns produced by near-field photolithography, resulting in significant deviations from the target pattern. This work employs edge-based near-field photolithography optical proximity effect correction technology to optimize mask patterns to resolve the issue of imaging distortion in near-field photolithography. Firstly, a near-field photolithography exposure model is established in Ansys-FDTD software, and based on this model, the optical proximity effect is analyzed using transfer matrix theory and distribution of electric field energy. Secondly, the designed mask pattern is fed into the exposure model to obtain the exposed pattern outline. Therefore, an edge-based compensation rule is proposed to optimize the pattern based on the trend of contour errors. Finally, the mask with the optimized pattern is prepared using near-field imaging photolithography for comparison experiments. According to the experimental results, the optimized mask improves the similarity of photolithography patterns by 34.7% and reduces the average corner error rate by 61.7%. Thus, the optimized imaging mask significantly reduces distortion in photolithography patterns.

engineering, electrical & electronic,optics,quantum science & technology
New Approaches To Optical Proximity Correction In Photolithography

Jl Du,Qz Huang,Jq Su,Yk Guo,Z Cui

DOI: https://doi.org/10.1016/S0167-9317(99)00018-0

IF: 2.3

1999-01-01

Microelectronic Engineering

Abstract:Two new schemes for optical proximity correction (OPC) have been proposed. Based on the analysis of light intensity distribution, one of the schemes uses both clear and opaque assistant features for OPC. These features are located both inside and adjacent to the mask feature to balance the intensity distribution. Another scheme converts the mask design into grey tone at different parts of the feature to re-adjust the aerial image. A deviation factor has been introduced to compare the OPC results. Computer simulation of aerial images indicates that without OPC an aerial image can deviate from its ideal image up to 10%. With the new OPC schemes the deviation can be reduced to below 1%.
Optical Proximity Correction for Improving Pattern Quality in Submicron Photolithography

石瑞英,郭永康

DOI: https://doi.org/10.3969/j.issn.1003-353x.2001.03.006

2001-01-01

Abstract:In this paper, the development of optical proximity correction technique is preserted. The various methods of optical proximity correction for improving the lithography pattern quality are discussed. The function and the position of optical proximity correction on lithography technology in future are analyzed.
Optical Proximity Correction By Grey Tone Photolithography

Z Cui,Jl Du,Qz Huang,Jq Su,Yk Guo

DOI: https://doi.org/10.1016/S0167-9317(00)00285-9

2000-01-01

Abstract:A new approach to optical proximity correction in VLSI photolithography has been proposed. Instead of changing feature dimension or adding serifs, the mask feature itself has been coded in different grey tone levels at different parts of the feature, based on the analysis of aerial image. Improvement on proximity effect is demonstrated by computer simulation and confirmed by experiment.
Monte Carlo Simulation of High-Energy Electron Beam Lithography Process

Jiang-Yong Pan,Zai-Fa Zhou,Qi Gan,Wen-Qin Xu

DOI: https://doi.org/10.1109/nano.2013.6720956

2013-01-01

Abstract:The complex scattering process of the high-energy electron beams in resist is simulated by Monte Carlo method. The energy deposition distributions are presented under different exposure conditions. The three-dimensional (3-D) development profiles are obtained with the developing threshold model. It is found that, in the high energy range, higher electron beam energy, thinner resist, appropriate dose and lower substrate's atom number will cause lower proximity effect. Based on the simulations, we can explain the proximity effect and the dose control on proximity effect correction via the three-dimensional development profiles. The results will be useful to optimize the exposure conditions in electron beam lithography, and to provide more accurate data for proximity effect correction.
Exposure Dose Dependence on Line Edge Roughness of A Latent Image in Electron Beam/Extreme Ultraviolet Lithographies Studied by Monte Carlo Technique

Alkinori Saeki,Takahiro Kozawa,Seiichi Tagawa,Heidi B. Cao,Hai Deng,Michael J. Leeson

DOI: https://doi.org/10.1117/1.2792178

2007-01-01

Abstract:Of great importance in post-optical lithographies, such as electron beam (EB) and extreme ultraviolet, is the improvement of line edge roughness or line width roughness of patterned resists. We provide an exposure dose dependence on LER of a latent image in chemically amplified EB resist from 1 to 50 mu C/cm(2). By using a Monte Carlo simulation and empirical equations, the effects of exposure dose and amine concentration on LER are investigated in terms of shot noise and image contrast. We make clear the correlation between LER and the fluctuation of the initial number of acid molecules generated in resists. (C) 2007 Society of Photo-Optical Instrumentation Engineers.
Novel Electron Optics for Large Subfield Electron-Beam Projection Lithography (EPL)

S Fukui,H Shimizu,WM Ren,S Suzuki,K Okamoto

DOI: https://doi.org/10.1117/12.484934

2003-01-01

Abstract:In Electron-beam Projection Lithography (EPL), achieving the requirements for the ITRS 45 nm roadmap node will require decreasing simultaneously both the beam blur from the Coulomb interaction effects and the geometrical aberrations from their present values. Because next generation lithography tools are required to have both high resolution and throughput, the Coulomb effect becomes more of an issue. In this paper, we propose a novel concept to effectively decrease the Coulomb effect. Based on this new concept we develop an EPL electron optical system in which not only the Coulomb effect but also the geometrical aberrations are greatly reduced. We report on the properties of this new EPL optical system.
PMMA resist profile and proximity effect dependence on the electron-beam lithography process parameters

I Kostic,K Vutova,E Koleva,A Bencurova

DOI: https://doi.org/10.1088/1742-6596/1492/1/012015

2020-04-01

Journal of Physics: Conference Series

Abstract:Abstract The study reveals the influence of the electron-beam lithography parameters (such as the exposure dose, resist thickness, depth) on the resist profile shape in the case of the PMMA (polymethyl-methacrylate) positive resist. The experiments are performed using an Elphy Quantum (Raith) e-beam lithography control system installed on an Inspect F50 (FEI) scanning electron microscope with a field emission cathode and a Gaussian intensity distribution. Profiles developed in the PMMA using the MIBK:IPA 1:3 developer and simulation results based on measurements along the resist profile depth for the case of 30-keV electron energy are presented and discussed. The results contribute to the knowledge on electron scattering in the resist/substrate in electron-beam lithography and assist in the development and approval of simulation tools for prediction and control of resist profiles in thick PMMA layers for lift-off nanopatterning.

A Review of Proximity Effect Correction in Electron-beam Lithography

Three-dimensional Proximity Effect Correction for Large-Scale Uniform Patterns

Methods of Proximity Effect Correction in Electron Beam Lithography

Feature Point-Based Proximity Effect Correction of Patterns

Proximity Effect In Electron Beam Lithography

Experimental Study of Proximity Effect Corrections in Electron Beam Lithography

Proximity Effect Correction Technique in Electron-Beam Direct Writing

An Efficient Dose-Compensation Method for Proximity Effect Correction

Proximity Effects During Mask Fabrication

Optical Proximity Correction in Laser Direct Writing

Optimization of Spatial Dose Distribution for Controlling Sidewall Shape in Electron-beam Lithography

Simulation of the Proximity Effect of Electron Beam Lithography

Optical Proximity Correction for Submicron Lithography by Laser Direct Writing

Edge-based near-field photolithography optical proximity effect correction technique

New Approaches To Optical Proximity Correction In Photolithography

Optical Proximity Correction for Improving Pattern Quality in Submicron Photolithography

Optical Proximity Correction By Grey Tone Photolithography

Monte Carlo Simulation of High-Energy Electron Beam Lithography Process

Exposure Dose Dependence on Line Edge Roughness of A Latent Image in Electron Beam/Extreme Ultraviolet Lithographies Studied by Monte Carlo Technique

Novel Electron Optics for Large Subfield Electron-Beam Projection Lithography (EPL)

PMMA resist profile and proximity effect dependence on the electron-beam lithography process parameters