Abstract:The main aim of this work is to optimize a Quantum Drift Diffusion model (QDD) (V. Romano, M. Torrisi, and R. Tracinà, "Approximate solutions to the quantum drift-diffusion model of semiconductors," J. Math. Phys. , vol. 48, p. 023501, 2007; A. El Ayyadi and A. Jüngel, "Semiconductor simulations using a coupled quantum drift-diffusion schrödinger-Poisson model," SIAM J. Appl. Math. , vol. 66, no. 2, pp. 554–572, 2005; L. Barletti and C. Cintolesi, "Derivation of isothermal quantum fluid equations with Fermi-Dirac and bose-einstein statistics," J. Stat. Phys. , vol. 148, pp. 353–386, 2012) by comparing it with the Boltzmann-Wigner Transport Equation (BWTE) (O. Muscato, "Wigner ensemble Monte Carlo simulation without splitting error of a GaAs resonant tunneling diode," J. Comput. Electron ., vol. 20, pp. 2062–2069, 2021) solved using a signed Monte Carlo method (M. Nedjalkov, H. Kosina, S. Selberherr, C. Ringhofer, and D. K. Ferry, "Unified particle approach to Wigner-Boltzmann transport in small semiconductor devices," Phys. Rev. B , vol. 70, pp. 115–319, 2004). A situation of high non equilibrium regime is investigated: electron transport in a Resonant Tunneling Diode (RTD) made of GaAs with two potential barriers in GaAlAs. The range of the suitable voltage bias applied to the RTD is analyzed. We find an acceptable agreement between QDD model and BWTE when the applied bias is low or moderate with a threshold of about 0.225 V over a length of 150 nm; it is found out that the use of a field dependent mobility is crucial for getting a good description of the negative differential conductivity in such a range. At higher bias voltages, we expect that QDD model loses accuracy.

Resonant Tunneling Diode Model Based on Non-Equilibrium-Green's-Function

A Compact Gate-Width Scalable Model for Dual-Gate GaAs Phemt

Study on tunable periodic graphene split-ring resonator (GSRR) structures using FDTD method

A New Method to Extract Gate Bias-Dependent Parasitic Resistances in GaAs Phemts

Optimized quantum drift diffusion model for a resonant tunneling diode

The Material Structure Research of the GaAs-based Resonant Tunneling Diode

A Novel Resonant Tunneling Diode Based on AlGaAsP/GaAs and Its Circuit Level Design

Numerical Simulation of Si/Si1-xGex Resonant Tunneling Diode at Room Temperature

Fully Analytical Carrier-Based Charge and Capacitance Model for Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.

Self-excited current oscillations in a resonant tunneling diode described by a model based on the Caldeira-Leggett Hamiltonian

Deep-Level Defects Induced Degradation of Negative Differential Resistance in GaN-Based Resonant Tunneling Diodes

A Non-Quasi-static Model for Nanowire Gate-All-around Tunneling Field-Effect Transistors

III-nitrides Based Resonant Tunneling Diodes

Numerical Simulation of Negative Differential Resistance Characteristics in Si/Si1- χGeχRTD at Room Temperature

Graphene nanoribbon resonant tunneling diode with dual connection between contacts

Accurate Small-Signal Equivalent Circuit Modeling of Resonant Tunneling Diodes to 110 GHz

A Two-Dimensional Analytical Model for Tunnel Field Effect Transistor and Its Applications

An Analytical Drain Current Model for Graphene Nanoribbon Tunnel Field-Effect Transistors