Weak Localization and Electron-Phonon Interaction in Layered Zintl Phase SrIn2P2 Single Crystal

Huanhuan Wang,Xiangde Zhu,Zheng Chen,Fangjun Lu,Huijie Li,Yuyan Han,Liang Li,Wenshuai Gao,Wei Ning,Mingliang Tian
DOI: https://doi.org/10.1088/1361-648x/abe96d
2021-01-01
Abstract:Recently, the Zintl phase SrIn2P2 single crystal was proposed to be a topological insulator candidate under lattice strain. Here, we report systematic electrical transport studies on the unstrained layered SrIn2P2 single crystals. The resistance presents a minimum value around T (c) = 136 K and then increases remarkably at low temperature. Distinct negative magnetoresistance below T (c), combined with the anomalous resistance, implies the carriers are weak localized at low temperature due to strong quantum coherence. Further analysis based on three-dimensional weak localization (WL) model suggests that the electron-phonon interaction dominates the phase decoherence process. Moreover, Hall measurements indicate that the transport properties are mainly dominated by hole-type carriers, and the WL effect is obviously affected by the carrier transport. These findings not only provide us a promising platform for the fundamental physical research but also open up a new route for exploring the potential electronic applications.
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