Abstract: The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for two-dimensional (2D) materials, the widely-used models for carrier transport only consider the interactions between electrons and some specific phonon modes, which usually leads to inaccruate predictions of electrons/phonons transport properties. In this work, comprehensive investigations on full electron-phonon couplings and their influences on carrier mobility and thermoelectric performances of 2D group-IV and V elemental monolayers were performed, and we also analyzed in details the selection rules on electron-phonon couplings using group-theory arguments. Our calculations revealed that, for the cases of shallow dopings where only intravalley scatterings are allowed, the contributions from optical phonon modes are significantly larger than those from acoustic phonon modes in group-IV elemental monolayers, and LA and some specific optical phonon modes contribute significantly to the total intravalley scatterings. When the doping increases and intervalley scatterings are allowed, the intervalley scatterings are much stronger than intravalley scatterings, and ZA/TA/LO phonon modes dominate the intervalley scatterings in monolayer Si, Ge and Sn. The dominant contributions to the total intervalley scatterings are ZA/TO in monolayer P, ZA/TO in monolayer As and TO/LO in monolayer Sb. Based on the thorough investigations on the full electron-phonon couplings, we predict accurately the carrier mobilities and thermoelectric figure of merits in these two elemental crystals, and reveal significant reductions when compared with the calculations based on the widely-used simplified model.

Electron-phonon Interaction and Zero-Field Charge Carrier Transport in the Nodal-Line Semimetal ZrSiS

Anisotropic Lattice Thermal Conductivity In Topological Semimetal Zrgex (X = S, Se, Te): A First-Principles Study

Electronic Correlations in Nodal-Line Semimetals

Electron Transport in Dirac Nodal-Line Semimetal ZrSiS

Effect of Mechanical Strain on the Optical Properties of Nodal‐Line Semimetal ZrSiS

Lattice Dynamics of Dirac Node-Line Semimetal Zrsis

Electronic and transport properties of semimetal ZrBeSi crystal: a first-principles study

Electron-phonon Coupling and Kohn Anomaly due to the Floating 2D Electronic Bands on the Surface of ZrSiS

Electron-phonon Coupling and Kohn Anomaly Due to Floating Two-Dimensional Electronic Bands on the Surface of ZrSiS

Quantum Criticality of the Excitonic Insulating Transition in the Nodal-Line Semimetal ZrSiS

Dynamical conductivity in topological nodal-line semimetal ZrSiS

Giant Phonon Anomaly in Topological Nodal-Line Semimetals

Two-Dimensional Electron or Hole Gas at Zno/6h-Sic Interface

Uniaxial strain effects on the Fermi surface and quantum mobility of the Dirac nodal-line semimetal ZrSiS

Anisotropic Berry phase in the Dirac nodal-line semimetal ZrSiS: The effect of spin-orbit coupling

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Transport Evidence of 3D Topological Nodal-Line Semimetal Phase in ZrSiS

Polarization-dependent excitons and plasmon activity in nodal-line semimetal ZrSiS

Phonon softening and electron-phonon coupling in the topological nodal-line semimetal ZrGeSe

Temperature-Induced Lifshitz Transition and Possible Excitonic Instability in ZrSiSe.

Thermoelectric transport in Zinc antimonide ZnSb