Abstract:Herein, highly transparent and conductive In2O3 films were deposited by reactive high power impulse magnetron sputtering from a metal target without thermal assistance. Film deposition was performed at room temperature using oxygen flow rates selected based on target voltage hysteresis, and the obtained films were compared in terms of structure and electrical/optical properties. Notably, the use of high plasma density, peak power, and ionization efficiency resulted in the formation of highly crystalline films featuring a small grain size and a columnar structure with a preferred orientation. The minimal carrier concentration of 1.6 × 1021 cm−3 was observed for films deposited in metallic mode; the carrier mobility of these films increased from 23 to 51 cm2 V−1 s−1 as the oxygen flow rate increased from 7 to 10 sccm. Moreover, the oxygen flow rate significantly affected the conductivity of In2O3 films, which ranged from semiconductor-like to insulator. The visible-light transmittance of In2O3 films exceeded 85% when oxygen flow rate larger than 7sccm. The absorption edge of as-prepared films was located close to 350 nm and shifted to lower wavelengths with increasing oxygen flow rate, which was explained by the Burstein–Moss effect. The infrared transmittance of In2O3 films was strongly dependent on the deposition mode. In agreement with Drude's theory, films deposited in transition mode at room temperature were highly transparent and conductive, which was ascribed to the use of controlled In:O ratios, whereas films deposited in other modes were shown to exhibit either excellent conductivity (metallic mode) or good optical transmittance (poisoning mode).

Optimization of the Pulsed Laser Deposition Process of In2O3 Thin Films for Ferroelectric Field Effect Device Applications

Effects of Nano-Sized In2O3on Sintering Behavior and Electrical Properties of 0.28Pb(in1/2nb1/2)o3-0.40Pb(mg1/3< /Sub>nb2/3)o3-0.32Pbtio3ceramics

In 2 O 3 透明薄膜晶体管的制备及其电学性能的研究

In-plane Dielectric Properties of Epitaxial 0.65pb(mg1∕3nb2∕3)o3−0.35pbtio3 Thin Films in a Very Wide Frequency Range

Integration of Oxide Semiconductor Thin Films with Relaxor-based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic Properties.

Fabrication and performance of indium oxide based transparent thin film transistors

Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors

Room‐Temperature Reversible and Nonvolatile Tunability of Electrical Properties of Cr‐Doped In2O3 Semiconductor Thin Films Gated by Ferroelectric Single Crystal and Ionic Liquid

Pulsed Excimer Laser Deposition and Rapid Thermal Annealing of Ferroelectric Pb(Zr0.52Ti0.48)O3 Thin Films on Si-on-Insulator

Growth and Electrical Performance of Pb(Mg1/3Nb2/3)O3–PbTiO3–Pb(Fe1/2Nb1/2)O3 Single Crystals

Enhancement of Electrical Performance in In2o3 Thin-Film Transistors by Improving the Densification and Surface Morphology of Channel Layers

Modulation of optical and electrical properties of In2O3 films deposited by high power impulse magnetron sputtering by controlling the flow rate of oxygen

High Ferroelectricities and High Curie Temperature of BiInO 3 PbTiO 3 Thin Films Deposited by RF Magnetron Sputtering Method

Enhanced Ferroelectric, Dielectric Properties of Fe-Doped PMN-PT Thin Films

Pulsed Laser Deposition and Characterization of Ferroelectric Pb(Zr,Ti)O-3 Thin Films on Silicon-On-Insulator Substrates

Interface-mediated Ferroelectricity in PMN-PT/PZT Flexible Bilayer Via Pulsed Laser Deposition

High‐quality ternary relaxor ferroelectric thin films on Si substrates by pulsed laser deposition method

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

Effects of substrate temperature on Bi0.8La0.2FeO3 thin films prepared by pulsed laser deposition

Properties of (001)-textured Pb(Mg 1/3 Nb 2/3 )O 3 –PbTiO 3 thin films

Tunable Magnetoresistance and Charge Carrier Density in Cr:In<sub>2</sub>O<sub>3</sub>/PbMg<sub>1/3</sub>Nb<sub>2/3</sub>O<sub>3 -</sub>PbTiO<sub>3</sub> Ferroelectric Field-Effect Devices