Direct Observation on <i>p</i>- to <i>n</i>-Type Transformation of Perovskite Surface Region during Defect Passivation Driving High Photovoltaic Efficiency

Shaobing Xiong,Zhangyu Hou,Shijie Zou,Xiaoshuang Lu,Jianming Yang,Tianyu Hao,Zihao Zhou,Jianhua Xu,Yihan Zeng,Wei Xiao,Wei Dong,Danqin Li,Xiang Wang,Zhigao Hu,Lin Sun,Yuning Wu,Xianjie Liu,Liming Ding,Zhenrong Sun,Mats Fahlman,Qinye Bao
DOI: https://doi.org/10.1016/j.joule.2020.12.009
IF: 46.048
2021-01-01
Joule
Abstract:Perovskite solar cells (PSCs) suffer from significant nonradiative recombination, limiting their power conversion efficiencies. Here, for the first time, we directly observe a complete transformation of perovskite MAPbI(3) surface region energetics from p- to n-type during defect passivation caused by natural additive capsaicin, attributed to the spontaneous formation of a p-n homojunction in perovskite active layer. We demonstrate that the p-n homojunction locates at similar to 100 nm below perovskite surface. The energetics transformation and defect passivation promote charge transport in bulk perovskite layer and at perovskite/PCBM interface, suppressing both defect-assisted recombination and interface carrier recombination. As a result, an efficiency of 21.88% and a fill factor of 83.81% with excellent device stability are achieved, both values are the highest records for polycrystalline MAPbI(3) based p-i-n PSCs reported to date. The proposed new concept of synergetic defect passivation and energetic modification via additive provides a huge potential for further improvement of PSC performance.
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