Evolution of Water Layer Adsorption on the GaN(0001) Surface and Its Influence on Electronic Properties

Shi-Qi Li,Yuan Chang,Zhe Zhang,Hongsheng Liu,Maodu Chen,Yan Han,Junfeng Gao,Jijun Zhao

DOI: https://doi.org/10.1021/acs.jpcc.0c10256

2021-01-01

Abstract:Water adsorption thermodynamics on a surface has attracted much attention because it may result in different configurations of water layers and modulate the properties of the surface. GaN is a typical wide gap semiconductor with many applications. During production, fabrication, and application, the electronic properties of GaN may be affected by water adsorption in environments. In this paper, we systematically explored the evolution of adsorbed water on GaN under various T (ambient temperature) and P (water vapor pressure) conditions to gain insights into the interaction mechanism of water/GaN interface. Interestingly, we found there are strong Ga-O bonds between H2O and the GaN(0001) surface. Thereby, water adsorption is preferred on the GaN surface even under very low H2O partial pressure. The phase diagram indicates that the monolayer water is a magic layer because it has the highest stability among 1-5 water layers. Strong electron coupling between H2O and GaN(0001) is revealed by the analysis of charge transfer. Too strong interactions between H2O and GaN(0001) severely distorted the hydrogen bond between water molecules, thereby no regular monolayer and bilayer ice phase can be formed on the GaN(0001) surface although we have tried several configurations. The adsorption amount of water below a full monolayer can be controlled by tuning the P-T. We then indicate that water absorption can reduce the work function of GaN, as a linear function of the water coverage.