Quantum interference enhances the performance of single-molecule transistors

Zhixin Chen,Iain M. Grace,Steffen L. Woltering,Lina Chen,Alex Gee,Jonathan Baugh,G. Andrew D. Briggs,Lapo Bogani,Jan A. Mol,Colin J. Lambert,Harry L. Anderson,James O. Thomas
DOI: https://doi.org/10.1038/s41565-024-01633-1
IF: 38.3
2024-03-26
Nature Nanotechnology
Abstract:Quantum effects in nanoscale electronic devices promise to lead to new types of functionality not achievable using classical electronic components. However, quantum behaviour also presents an unresolved challenge facing electronics at the few-nanometre scale: resistive channels start leaking owing to quantum tunnelling. This affects the performance of nanoscale transistors, with direct source–drain tunnelling degrading switching ratios and subthreshold swings, and ultimately limiting operating frequency due to increased static power dissipation. The usual strategy to mitigate quantum effects has been to increase device complexity, but theory shows that if quantum effects can be exploited in molecular-scale electronics, this could provide a route to lower energy consumption and boost device performance. Here we demonstrate these effects experimentally, showing how the performance of molecular transistors is improved when the resistive channel contains two destructively interfering waves. We use a zinc-porphyrin coupled to graphene electrodes in a three-terminal transistor to demonstrate a >10 4 conductance-switching ratio, a subthreshold swing at the thermionic limit, a >7 kHz operating frequency and stability over >10 5 cycles. We fully map the anti-resonance interference features in conductance, reproduce the behaviour by density functional theory calculations and trace back the high performance to the coupling between molecular orbitals and graphene edge states. These results demonstrate how the quantum nature of electron transmission at the nanoscale can enhance, rather than degrade, device performance, and highlight directions for future development of miniaturized electronics.
materials science, multidisciplinary,nanoscience & nanotechnology
What problem does this paper attempt to address?
The core problem that this paper attempts to solve is: how to use the quantum interference effect to improve the performance of single - molecule transistors (SMTs), especially the leakage current problem caused by quantum tunneling at the nanoscale. Specifically, the paper shows that by introducing destructive quantum interference (DQI), key performance indicators such as the on - off ratio, threshold voltage, and sub - threshold swing of single - molecule transistors can be significantly improved. ### Problem Background In nanoscale electronic devices, quantum effects bring both new functional possibilities and challenges. In particular, when the device size is reduced to a few nanometers, quantum tunneling will cause the resistance channel to start leaking electricity, which will degrade the performance of the transistor, such as reducing the on - off ratio and increasing the static power consumption. The traditional coping strategy is to increase the complexity of the device, but this is not the optimal solution. ### Core Contributions of the Paper The paper proposes an innovative method, that is, using the quantum interference effect to enhance the performance of single - molecule transistors. Specifically: 1. **Experimental Verification**: The authors used zinc porphyrin molecules coupled with graphene electrodes to construct a three - terminal single - molecule transistor, and experimentally proved that DQI can significantly increase the transistor's conductive on - off ratio (exceeding \(10^4\)), achieve a sub - threshold swing close to the thermionic limit (\(14.5\pm0.4 \, \text{mV/dec}\)), and achieve an operating frequency of more than 7 kHz and a stability cycle of more than \(10^5\) times. 2. **Theoretical Explanation**: Through density functional theory (DFT) calculations and quantum transport theory, the authors explained how the coupling between molecular orbitals and graphene edge states leads to anti - resonant interference characteristics, thereby suppressing the conductance at certain energies and forming an obvious conductance suppression region. 3. **Performance Improvement Mechanism**: The paper points out that by adjusting the gate voltage \(V_g\), the molecular energy level can be switched between resonant and non - resonant states, thereby achieving a high on - off ratio. In particular, in the non - resonant state, the DQI effect can completely suppress the conductance, making the current in the off - state of the device extremely low. ### Conclusion The paper shows how to use the quantum interference effect to improve performance in nanoscale single - molecule transistors, providing new ideas for the future development of low - power, high - performance nano - electronic devices. This research not only proves that quantum effects can be used as a resource to enhance device functions, but also reveals the unique advantages of graphene electrodes in molecular electronics. ### Formula Summary - **Sub - threshold Swing Formula**: \[ S_{\text{s - th}}=\frac{\Delta V_g}{\log_{10}\left(\frac{I_{\text{on}}}{I_{\text{off}}}\right)} \] where \(\Delta V_g\) is the change in gate voltage, and \(I_{\text{on}}\) and \(I_{\text{off}}\) are the currents in the on - and off - states, respectively. - **Total Transmission Coefficient**: \[ T_{\text{total}} = |t_1|^2+|t_2|^2 + 2|t_1||t_2|\cos(\Delta\phi) \] When \(|t_1| = |t_2|\) and \(\Delta\phi=\pi\), the total transmission coefficient \(T_{\text{total}} = 0\), that is, complete suppression occurs. These results indicate that by cleverly designing the molecular structure and electrode materials, an efficient quantum interference effect can be achieved at the nanoscale, thereby significantly improving the performance of single - molecule transistors.