Optimization of Tunable Semiconductor V-cavity Laser for Analog Application

Dandi Zhu,Jian-Jun He

DOI: https://doi.org/10.1364/acpc.2020.m4a.162

2020-01-01

Abstract:We report a tunable semiconductor V-cavity laser with optimized modulation section length for analog application. The input third order intermodulation intercept of the optimized laser has been improved by 3.2dB.

What problem does this paper attempt to address?

Tunable V-Cavity Semiconductor Laser And Modules

Jian-Jun He,Xiaohai Xiong,Jianjun Meng,Sen Zhang,Xiaolu Liao,Hongli Zhu,Lin Wu,Li Zou,Lei Wang,Guoping Li

2014-01-01

Abstract:We present the principle, design, packaging and measurement results of widely tunable V-cavity lasers. By using a novel half-wave coupler, single-mode lasing with high side mode-suppression-ratio is achieved. Single-electrode controlled wide-band wavelength tuning with Vernier effect is realized. The full-band tuning of 50 channels with 100 GHz spacing is demonstrated by further employing temperature induced gain spectrum shift. The laser is packaged into a small-form-factor 9-pin TOSA, and the electronic driver has been developed for the wavelength tuning and direct modulation. The advantages of compactness, fabrication simplicity, and easy wavelength control offer great potential for the tunable laser to be used in low-cost access and data center networks, as well as in portable devices for spectroscopic analysis.
Tunable V-Cavity Laser Monolithically Integrated with Traveling Wave Mach-Zehnder Modulator

Qi Chen,Zhongwen Wang,Jiasheng Zhao,Jianjun Meng,Guocai Song,Jian-Jun He

DOI: https://doi.org/10.1109/lpt.2022.3198520

IF: 2.6

2022-01-01

IEEE Photonics Technology Letters

Abstract:We present the monolithic integrated widely tunable V-cavity laser and traveling wave Mach-Zehnder modulator operating in the C-band. A wide wavelength tuning of 64 channels from 1513 nm to 1565 nm is obtained with SMSRs mostly over 40 dB. The $\text{V}_{\pi }$ is 5.5 V and the static extinction ratio is 14 dB. The 3-dB electro-optic bandwidth is measured to be 14.2 GHz. By optimizing the device structure and thickness of intrinsic region on a semi-insulating substrate wafer, a theoretical bandwidth over 40 GHz can be achieved.
40Nm Quasi-Continuous Wavelength Tuning of V-cavity Semiconductor Laser

Tize Li,Jianjun Meng,Jian-Jun He

DOI: https://doi.org/10.1088/1742-6596/844/1/012013

2017-01-01

Abstract:Full band quasi-continuous wavelength tuning with similar to 36dB side mode suppression ratio of V-cavity semiconductor laser is reported. A simple and general tuning algorithm employing only two electrodes to control the frequency combs shifting synchronously is presented and demonstrated, respectively.
Simple and Compact Tunable Semiconductor Lasers Based on Novel Half-Wave Coupler

Jian-Jun He,Xiaohai Xiong,Jianjun Meng,Lin Wu,Sen Zhang,Xiaolu Liao,Li Zou

DOI: https://doi.org/10.1117/12.2085701

2015-01-01

Abstract:Widely tunable semiconductor lasers based on a novel half-wave coupler are presented. They have been implemented in the form of half-wave coupled V-cavity and ring-FP cavities. By using the novel half-wave coupler, single-mode lasing with high side-mode-suppression-ratio is achieved. Single-electrode controlled wide-band wavelength tuning with Vernier effect is demonstrated. The full-band tuning of 50 channels with 100GHz spacing is realized by further employing temperature induced gain spectrum shift. The laser is packaged into a small-form-factor 9-pin box TOSA, and the electronic driver has been developed for the wavelength tuning and direct modulation. The advantages of compactness, fabrication simplicity, easy wavelength control and direct modulation allow the tunable lasers to be used in low-cost access and datacenter networks, as well as in portable devices for spectroscopic analysis.
Modeling of Widely Tunable V-cavity Semiconductor Laser Using Time-Domain Traveling-Wave Method

Lin Wu,Jian-Jun He,Dominic Gallagher

DOI: https://doi.org/10.1364/josab.32.000309

2015-01-01

Journal of the Optical Society of America B

Abstract:We investigate the static and dynamic characteristics of the widely tunable V-cavity semiconductor laser using the time-domain traveling-wave method. The theoretical model is presented. The simulation results are compared with experimental data for an all-active V-cavity laser, and good agreements are obtained. To improve the device performance, a new device structure with passive tuning waveguides is designed. The numerical results show that 21 channels can be achieved by single electrode tuning using carrier injection effect with two cavities of 420 and 440 mu m long. Dynamic wavelength switching between different channels is simulated. Mode competition is observed during the transient and the switching delay time varies from 3 to 18.5 ns for different switching paths. A simple algorithm for quasi-continuous tuning is developed for the first time by varying the injection currents on the channel selector electrode and the fine-tuning electrode synchronously. A quasi-continuous tuning of 16.8 nm is achieved with a current variation of less than 20 mA on each electrode. For direct modulation characteristics, small signal response simulation is carried out by an impulse current injection with a fast Fourier transform algorithm, and a 3 dB bandwidth of 7 GHz is obtained when biased at 100 mA. Moreover, 2.5 and 10 Gb/s direct intensity modulation are also demonstrated. The simulation results show great potential for the compact and low-cost tunable laser to be used for wavelength-agile access and data center networks, as well as biomedical applications. (C) 2015 Optical Society of America
Wavelength switchable semiconductor laser using half-wave V-coupled cavities.

Jian-Jun He,Dekun Liu

DOI: https://doi.org/10.1364/acpc.2012.as4h.1

IF: 3.8

2008-01-01

Optics Express

Abstract:A new semiconductor laser structure with digitally switchable wavelength is proposed. The device comprises two coupled c. avities with different optical path lengths, which form V-shaped branches with a reflective 2x2 half-wave optical coupler at the closed end. The reflective 2x2 coupler is designed to have a pi-phase difference between crosscoupling and self-coupling so as to produce synchronous power transfer functions. High single-mode selectivity is achieved by optimizing the coupling coefficient. The switchable wavelength range is greatly increased by using Vernier effect. Using deep-etched trenches as partial reflectors, additional waveguide branch structures are used outside the laser cavities to form a complete Mach-Zehnder interferometer, allowing space switching, variable attenuation, or high speed modulation to be realized simultaneously. Detailed design principle and numerical results are presented. (C) 2008 Optical Society of America.
High Single-Mode Selectivity V-cavity Tunable Semiconductor Laser Based on GaAs

Tuo Chen,Mingyu Li,Yuxia Song,Kai Chang,Yonggang Zou,Jian-Jun He

DOI: https://doi.org/10.1016/j.rinp.2023.107209

IF: 4.565

2024-01-01

Results in Physics

Abstract:With the progress of integrated optoelectronic devices over recent decades, the semiconductor research has increasingly focused on tunable semiconductor lasers featuring a compact structure and simplified fabrication. In this manuscript, we present a proposal for a V-Cavity tunable semiconductor Laser (VCL) at a center wavelength of 940 nm. The theoretical analysis encompasses the threshold conditions of the laser, considering various cavity length differences within the waveguide layer structure. Moreover, we showcase a VCL with a waveguide width of 3 μm and a channel interval of 0.6 nm. Through the optimization of polynomial parameters associated with the curved waveguide, the VCL attains a transmittance exceeding 99.4 %. Additionally, we address the determination of optimal parameter ranges and solve the optical field distribution within the half-wave coupler. The simulation results exhibit that the half-wave coupler, employing optimized parameters, achieves remarkable single-mode selectivity when operating at a central wavelength of 940 nm. Notably, a maximum side mode suppression ratio (SMSR) of 47.9 dB is attainable with a half-wave coupler length of 45 μm and a waveguide gap of 1.7 μm.
Design and Improvement of InP-based Traveling Wave Mach-Zehnder Modulator for Monolithic Integrated with V-cavity Laser

Zhongwen Wang,Qi Chen,Siyang Zhou,Jian-Jun He

DOI: https://doi.org/10.1117/12.2656977

2022-01-01

Abstract:We propose a simple and effective model to properly design the monolithically integrated tunable optical transmitter based on the traveling wave Mach-Zehnder modulator (TW-MZM) and V-cavity laser (VCL). Firstly, the integrated structure of TW-MZM and VCL is presented. Then we put forward a TW-MZM model to design and improve the performance of the electro-optic (EO) modulation bandwidth of the optical transmitter. By changing the structural parameters of the optical waveguide and the traveling wave electrodes, we reduce the microwave transmission loss from 3 mm-1 to 0.6 mm-1 at 20 GHz and thus increase the theoretical electro-optic response from 13.5 GHz to 52.8 GHz. Due to the high modulation efficiency from the Quantum Confined Stark Effect (QCSE) in quantum wells, the traveling wave modulator is very compact with a length of only 600 μm.
Simple and Compact V-cavity Semiconductor Laser with 50×100 GHz Wavelength Tuning.

Sen Zhang,Jianjun Meng,Shanli Guo,Lei Wang,Jian-Jun He

DOI: https://doi.org/10.1364/oe.21.013564

IF: 3.8

2013-01-01

Optics Express

Abstract:We report simple and compact V-cavity semiconductor laser capable of full-band wavelength tuning. A half-wave coupler is used to obtain high side-mode suppression ratio (SMSR) without any grating or epitaxial regrowth. Temperature induced gain spectrum shift is employed in combination with the Vernier tuning mechanism to extend the wavelength tuning range beyond the free spectral range limit. Wavelength tuning of 50 channels at 100GHz spacing with SMSR up to 38 dB has been demonstrated. We show that with a temperature variation of 35°C, the tuning range can be extended by about 15 nm, in contrast to 0.1 nm/°C for thermo-optic tuning range in grating based lasers. At a fixed temperature, consecutive wavelength tuning of 31 channels was achieved. The response time of the channel switching under the current-tuning regime is measured to be about 20μs. The large tuning range that can cover the full C-band will enable such a simple, compact and potentially low-cost tunable laser to be used in wavelength-agile access and data center networks.
Widely Tunable Optical Transmitter Using an Integrated V-Cavity Laser and Mach-Zehnder Modulator

Qi Chen,Zhongwen Wang,Yuqing Jiao,Jinsheng Ni,Jian-Jun He

DOI: https://doi.org/10.1364/isst.2019.jw3a.8

2019-01-01

Abstract:We report a tunable optical transmitter using an integrated V-cavity laser and Mach-Zehnder modulator. Wavelength tuning of 28 channels is obtained and over 15dB DC extinction ratio is realized under 4.5V reverse bias voltage.
10Gb/s Direct Modulation of Widely Tunable V-Cavity-Laser with Chirp Managed Laser Technology

Jianjun Meng,Lei Wang,Jian-Jun He

DOI: https://doi.org/10.1117/12.2078176

2015-01-01

Abstract:We report direct modulation results in a simple and compact widely tunable V-cavity laser. Chirp managed laser technology has been successfully applied to the V-cavity laser with an optical spectrum reshaping filter. The tunable V-cavity-laser employs a half-wave coupler to obtain single-mode operation with high side-mode suppression ratio and the Vernier effect to extend its tuning range. It does not require any grating structure and regrowth steps. In this experiment, we achieved single-electrode controlled wavelength tuning of about 18 channels at 100GHz spacing with a fixed temperature, and 32 channels using 2 temperature settings. Well-open eye diagrams with extinction ratio above 4.3dB in all channels are observed when the laser is directly modulated at 2.5Gb/s. Although the measured small-signal frequency response is only about 5.7GHz, more than 6.7dB extinction ratio under 10Gb/s modulation rate is achieved by using the chirp managed laser technology with an optical spectrum reshaping filter placed after the output of the laser to convert the frequency chirp accompanying the direct modulation to amplitude modulation. The advantages of compactness, fabrication simplicity, easy wavelength control algorithm, and simple direct modulation offer great potential for the chirped managed V-cavity laser to be used in low-cost WDM links.
Simulation And Design Of Monolithically Integrated Tunable Wavelength Converter Based On V-Cavity Laser And Delayed Mach-Zehnder Interferometer

Yingchen Wu,Jian-Jun He

2014-01-01

Abstract:In this paper, we present the design and simulation results of a much simpler monolithically integrated wavelength converter based on a V-cavity laser (VCL) and delayed Mach-Zehnder interferometer (DMZI) with semiconductor optical amplifiers (SOAs). The dynamic characteristics of the wavelength converter are investigated using the large-signal dynamic model of semiconductor optical amplifier (SOA) with time-dependent transfer matrix method (TD-TMM). A 10 Gb/s return-to-zero (RZ) tunable all-optical wavelength converter is achieved with a large extinction ratio for both frequency up and down conversions.
Tunable V-Cavity Laser Based on Half-wave Multimode Interference Reflector

Qi Chen,Yuqing Jiao,Zhuping Fan,Jinsheng Ni,Jian-Jun He

DOI: https://doi.org/10.1117/12.2575010

2019-01-01

Abstract:We report a tunable V-cavity laser based on half-wave multimode interference reflector. Wavelength tuning of 39 channels is obtained with side mode suppression ratio around 38dB and the output power can reach 14mW.
Narrow Linewidth Tunable V-cavity Laser Using Self-Injection Method

Xiaohai Xiong,Zhipeng Hu,Sen Zhang,Xiaolu Liao,Jian-Jun He

DOI: https://doi.org/10.1364/oe.25.032957

IF: 3.8

2017-01-01

Optics Express

Abstract:A widely tunable V-cavity semiconductor laser with kilohertz linewidth is demonstrated using simple self-injection method. The tunable laser is packaged into a small-form-factor 9-pin TOSA and can be tuned over 22 channels at 100 GHz spacing with side mode suppression ratios over 36 dB. Self-injection method is used for linewidth reduction by applying optical feedback. Linewidth of the V-cavity laser can be compressed from several megahertz to tens of kilohertz. The linewidth reduction method is essentially channel independent and can be easily realized. It can meet the requirements of many applications such as high-order modulation, coherent communication and sensing. (C) 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Novel Semiconductor Lasers and Integrated Photonic Devices

Jian-Jun He,Jialiang Jin,Dekun Liu,Lei Jin,Min Lou,Tingting Yu,Lei Wang

DOI: https://doi.org/10.1117/12.873899

2010-01-01

Abstract:Novel design concepts, simulations and experimental results on semiconductor lasers and integrated photonic devices are presented, for both telecom and biomedical applications. It is shown that the Vernier effect can be used to increase the tuning range of a digitally wavelength-switchable semiconductor laser, and to increase the sensitivity of passive and active waveguide sensors. The wavelength switchable laser based on V-coupled cavity has a large tolerance on the accuracy of the setting current. For the middle 50% of the current range corresponding to a wavelength channel, the wavelength varies by only ±0.01nm from the set value for 0.8nm channel spacing and the SMSR is maintained above 38dB. Wavelength switching over 8 consecutive channels is experimentally demonstrated using a single electrode control. The wavelength shift sensitivity of a waveguide sensor based on two cascaded microring resonators with Vernier effect can reach 1300nm/RIU, over an order of magnitude higher than a single ring sensor. A monolithic integrated intracavity biosensor based on V-coupled cavity laser is also proposed and analyzed. By simply detecting the power ratio of two output ports, a refractive index sensitivity in the order of 10-8 RIU can be achieved thanks to the intracavity sensing mechanism and the Vernier effect.
Digital Wavelength Switching by Thermal and Carrier Injection Effects in V-coupled Cavity Semiconductor Laser

Jialiang Jin,Lei Wang,Jianjun He

DOI: https://doi.org/10.3788/col201210.102501

2012-01-01

Abstract:Consecutive wavelength switching characteristics of a simple, compact, and digitally wavelength-switchable laser based on V-coupled cavities are reported. Wavelength switching through thermal and carrier injection effects is examined. Without using band gap engineering for the tuning section, 26- and 9-channel wavelength switching schemes are achieved via thermal and carrier injection effects, respectively. The performances of these two tuning schemes are then compared.
Tunable V-Coupled-Cavity Semiconductor Laser Monolithically Integrated with Monitoring Photodiodes Using Deeply Etched Reflective Trenches

Xiaolu Liao,Jianjun Meng,Jian-Jun He

DOI: https://doi.org/10.1117/12.2073603

2014-01-01

Abstract:We present a 1560-nm-band digitally wavelength tunable V-coupled-cavity semiconductor laser monolithically integrated with two waveguides based monitoring photodiodes (MPD) through deeply etched reflective trenches. The reflective trenches are designed to be 1.16 mu m wide, about three quarters of the wavelength, and are deeply etched through the waveguide with a depth larger than 4 mu m. Due to the high reflectivity of the etched trenches, a low threshold current of 19mA is achieved. Using a single electrode control, wavelength tuning of 22 channels at 100GHz spacing with SMSR above 35 dB is obtained. The relationship between the photocurrents of the two MPD at the two waveguide branches and the laser output power from the coupler side is investigated as a function of the wavelength. Since the integrated tunable laser with MPDs is very compact and does not involve any grating or epitaxial regrowth, it is suitable for low-cost multifunctional photonic applications for access and data center networks.
Improved Half-Wave Coupled V-Cavity Laser Using Aggregating-Image Multimode Interference Coupler

Qi Chen,Zhongwen Wang,Jiasheng Zhao,Jianjun Meng,Jian-Jun He

DOI: https://doi.org/10.1109/JPHOT.2022.3184552

IF: 2.4

2022-01-01

IEEE Photonics Journal

Abstract:We theoretically analyze and experimentally demonstrate improved half-wave couplers for widely tunable V-cavity lasers. An overlapping-image 6x6 MMI coupler and an aggregating-image 16x16 MMI coupler are investigated, which give optimal coupling phase and coefficient for achieving high single-mode selectivity in V-cavity lasers while producing a low loss. A single-electrode controlled tuning of 38 channels is achieved with channel spacings of 100 GHz and 150 GHz. By combining two single-electrode tuning segments at different temperatures, a wavelength tuning range of 52 channels from 1515 nm to 1585 nm is obtained, and the side mode suppression ratios (SMSRs) reach 45 dB.
Static and Dynamic Characteristics of Digital Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Dekun Liu,Min Lou,Jian-Jun He

DOI: https://doi.org/10.1109/jlt.2009.2036942

IF: 4.7

2009-01-01

Journal of Lightwave Technology

Abstract:The static and dynamic characteristics of digital wavelength switching in a novel V-coupled-cavity semiconductor laser is investigated. In contrast to previously investigated Y-laser, the V-shaped coupler can realize not only an optimum coupling coefficient but also a ¿-phase difference between the cross-coupling and self-coupling coefficients, which results in a high single-mode selectivity. It is shown that while switching to an optimal current value results in the maximal output power and maximal side-mode suppression ratio (SMSR), the digitally wavelength switchable laser has a good tolerance on the accuracy of the switching current. For a current deviation corresponding to ±25% of the channel spacing, the SMSR only degrades by about 5.2 dB, while the wavelength varies by only ±0.01 nm from the set value for the case of 0.8 nm channel spacing. The dynamic properties including the switching transients and switching delay are also investigated and discussed.
All-Optical Wavelength Conversion Based on Tunable V-Cavity Laser

Xiaobo Zhang,Xiaolu Liao,Zhipeng Hu,Jian-Jun He

DOI: https://doi.org/10.1109/piers.2016.7734970

2016-01-01

Abstract:We design and investigate a monolithically integrated wavelength converter based on a tunable V-cavity laser with a Mach-Zehnder interferometer with independent phase control. A 6.25 Gb/s non-return-to-zero conversion has been modeled using time-domain traveling-wave method.

Optimization of Tunable Semiconductor V-cavity Laser for Analog Application

Tunable V-Cavity Semiconductor Laser And Modules

Tunable V-Cavity Laser Monolithically Integrated with Traveling Wave Mach-Zehnder Modulator

40Nm Quasi-Continuous Wavelength Tuning of V-cavity Semiconductor Laser

Simple and Compact Tunable Semiconductor Lasers Based on Novel Half-Wave Coupler

Modeling of Widely Tunable V-cavity Semiconductor Laser Using Time-Domain Traveling-Wave Method

Wavelength switchable semiconductor laser using half-wave V-coupled cavities.

High Single-Mode Selectivity V-cavity Tunable Semiconductor Laser Based on GaAs

Design and Improvement of InP-based Traveling Wave Mach-Zehnder Modulator for Monolithic Integrated with V-cavity Laser

Simple and Compact V-cavity Semiconductor Laser with 50×100 GHz Wavelength Tuning.

Widely Tunable Optical Transmitter Using an Integrated V-Cavity Laser and Mach-Zehnder Modulator

10Gb/s Direct Modulation of Widely Tunable V-Cavity-Laser with Chirp Managed Laser Technology

Simulation And Design Of Monolithically Integrated Tunable Wavelength Converter Based On V-Cavity Laser And Delayed Mach-Zehnder Interferometer

Tunable V-Cavity Laser Based on Half-wave Multimode Interference Reflector

Narrow Linewidth Tunable V-cavity Laser Using Self-Injection Method

Novel Semiconductor Lasers and Integrated Photonic Devices

Digital Wavelength Switching by Thermal and Carrier Injection Effects in V-coupled Cavity Semiconductor Laser

Tunable V-Coupled-Cavity Semiconductor Laser Monolithically Integrated with Monitoring Photodiodes Using Deeply Etched Reflective Trenches

Improved Half-Wave Coupled V-Cavity Laser Using Aggregating-Image Multimode Interference Coupler

Static and Dynamic Characteristics of Digital Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

All-Optical Wavelength Conversion Based on Tunable V-Cavity Laser