Abstract:Element doping is an effective method to improve the performance of ZnO varistors. Previous studies mainly focused on the variation of microstructures and Schottky barriers. In this study, the effects of Co dopant on electrical properties are investigated from the aspect of multiscale defect structures, including intrinsic point defects, the heterogeneous interface of depletion/intergranular layers, and interface states at grain boundaries. Combining with analysis of phase composition and energy dispersive spectroscopy, it is found that Co tends to dissolve into ZnO grains when slightly doped. It substitutes Zn 2+ with the same valence and affects little on densities of donors. Segregation of Co at grain boundaries would result in the formation of spinel phase Co(Co 4/3 Sb 2/3 )O 4 and transformation of the intergranular phase from α-Bi 2 O 3 to δ-Bi 2 O 3 . Meanwhile, densities of point defects are indirectly affected by oxygen ambient during sintering, resulting in abnormal variation of grain resistivity. And interface states are enhanced, leading to improved barriers at grain boundaries. Therefore, reduced leakage current, enhanced grain resistivity, and improved non-linear coefficient in Co-doped ZnO varistor blocks are understood from the underlying multiple defect structures. This presents a potential approach to explore short-term performance and long-term stability of ZnO varistors from the aspect of defect responses.

Evolution of Intrinsic Defects Concentration of ZnO Varistor Ceramics Doped with Ni2O3 During Sintering

Effect of Ni2O3 Doping on the Electrical Properties and Intrinsic Defect Concentration of ZnO Varistor Ceramics

Simultaneously Improving the Electrical Properties and Long-Term Stability of ZnO Varistor Ceramics by Reversely Manipulating Intrinsic Point Defects

Optimization of Sintering Temperature and Doping Level of Cr2O3 in ZnO-Pr6O11-Based Varistor Ceramics

Study on the electrical properties and defect structures of a high voltage gradient ZnO varistor

Reverse Manipulation of Intrinsic Point Defects in ZnO-based Varistor Ceramics Through Zr-stabilized High Ionic Conducting Βiii-Bi2o3 Intergranular Phase

Role of Inhomogeneous Intrinsic Point Defect Distribution on Electrical Properties in ZnO Varistor Ceramics

Effect of SnO2 Doping on Microstructural and Electrical Properties of ZnO–Pr6O11 Based Varistor Ceramics

Revisiting the Effects of Co 2 O 3 on Multiscale Defect Structures and Relevant Electrical Properties in ZnO Varistors

An ultralow concentration of Cr2O3 dopants driven lower temperature sintering ZnO‐based varistor ceramics

Microstructure design and optimization of ZnO-Bi 2O 3-Sb 2O 3 based ceramic varistors

Study of Intrinsic Defects in Zno Varistor Ceramics by Dielectric Spectroscopy

Admittance Spectroscopy of Y<sub>2</sub>O<sub>3</sub>-Doped ZnO Varistors Sintered at Different Temperature

Evolution of Electron Trapping at the Grain Boundary During Long-Term Stability Transition of Stable ZnO Varistor Ceramics

Zinc Interstitial As A Universal Microscopic Origin for the Electrical Degradation of Zno-Based Varistors under the Combined Dc and Temperature Condition

Saturation Effect of Al(NO3)3 Dopant on Residual Voltages of ZnO Based Varistor Ceramics

Influence of SnO2 on ZnO–Bi2O3–Co2O3 Based Varistor Ceramics

Effect of Mn2+ Substitution Doped Lattice Zn on Intrinsic Point Defects of ZnO Varistor Ceramics Based on First Principles

Indication Of Initial Degradation Of Zno Varistor Ceramics

Microstructure Design and Optimization of ZnO-Bi2O3-Sb2O3 Based Ceramic Varistors

The Dependence of Sintering Temperature on Schottky Barrier and Bulk Electron Traps of ZnO Varistors