Measurement of Neutron-induced Single Event Upset Cross-Section of UltraScale Kintex FPGA Using Time-of-Flight Technique
Yao Teng,Changqing Feng,Zhixin Tan,Zhengtao Liu,Zhizhen Qin,Songsong Tang,Ruirui Fan,Bin Zhou,Zhiliang Hu,Lei Zhao,Shubin Liu,Haofan Bai,Jiangbo Bai,Jie Bao,Ping Cao,Qiping Chen,Yonghao Chen,Wenhao Duan,Anchuan Fan,Minhao Gu,Changcai Han,Zijie Han,Guozhu He,Yongcheng He,Yang Hong,Yiwei Hu,Hanxiong Huang,Wei Jiang,Zhijie Jiang,Ling Kang,Changlin Lan,Bo Li,Feng Li,Qiang Li,Xiao Li,Yang Li,Jie Liu,Rong Liu,Yina Liu,Guangyuan Luan,Changjun Ning,Yijia Qiu,Jie Ren,Wenkai Ren,Zhizhou Ren,Xichao Ruan,Zhaohui Song,Kang Sun,Jingyu Tanga,Shengda Tang,Jincheng Wang,Lijiao Wang,Pengcheng Wang,Zhaohui Wang,Zhongwei Wen,Xiaoguang Wu,Xuan Wu,Zepeng Wu,Cong Xia,Likun Xie,Han Yi,Tao Yu,Yongji Yu,Guohui Zhang,Hangchang Zhang,Qiwei Zhang,Xianpeng Zhang,Yuliang Zhang,Zhiyong Zhang,Maoyuan Zhao,Zhihao Zhou,Kejun Zhu,Chong Zou
DOI: https://doi.org/10.1109/tns.2024.3482881
IF: 1.703
2024-01-01
IEEE Transactions on Nuclear Science
Abstract:The correlation between neutron energy and neutron-induced Soft Error Rate (SER) is crucial for estimating the impact on electronic devices fabricated using Complementary Metal-Oxide-Semiconductor (CMOS) technology in diverse neutron environments, including those found in high-energy physics experiments, aviation settings, etc. This paper presents an investigation conducted independently at the China Spallation Neutron Source (CSNS) using the Back-n white neutron source and Atmospheric Neutron Irradiation Spectrometer (ANIS) neutron source to directly measure Single Event Upset (SEU) effects of the Configuration Random Access Memory (CRAM) and Block Random Access Memory (BRAM) in 20 nm CMOS technology based UltraScale Kintex FPGA. By recording the frequency of SEU events and the time of flight (TOF), SEU cross-sections can be calculated for different energies. Experiment in-situ indicates a coherent alignment of different outcomes under neutron irradiation from Back-n and ANIS, despite their different neutron energy spectra. The SEU threshold energy is estimated to be 0.69 ± 0.076 MeV for CRAM, and 0.80 ± 0.013 MeV for BRAM. The measured cross-sections can reach saturation of 6.9 × 10 -15 cm 2 /bit and 1.6 × 10 -14 cm 2 /bit for CRAM and BRAM, respectively while the neutron energy is about 20 MeV.