Improved H2 Detection Performance of GaN Sensor with Pt/Sulfide Treatment of Porous Active Layer Prepared by Metal Electroless Etching

Muhammad Shafa,S. Assa Aravindh,Mohamed N. Hedhili,Saleh T. Mahmoud,Yi Pan,Tien Khee Ng,Boon S. Ooi,Adel Najar
DOI: https://doi.org/10.1016/j.ijhydene.2020.10.275
IF: 7.2
2020-01-01
International Journal of Hydrogen Energy
Abstract:High-performance chemiresistor gas sensor made of sulfide porous GaN decorated with Pt nanoparticles, which shows tunable sensor response and enhanced sensitivity. The fabricated gas sensors show detection of H-2 down to 30 ppm at 23 degrees C after sulfide treatment and Pt decorated porous GaN. The response time and recovery time were equal to 47 s and 113 s, respectively. Density functional theory simulations were used to support the detection mechanism based on sulfide treatment. Adsorption energy calculations showed that H adsorption energy is lowered by the simultaneous presence of S and Pt on the GaN (0001) surface. The density of states (DOS) calculations revealed possibility of bond strengthening when Pt and S is adsorbed on GaN surface along with H, arising from the hybridization of d and p orbitals of Pt and S with that of H 1s orbitals. (C) 2020 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.
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