Large and Complex Chromatic Dispersion Profile in Epsilon-Near-Zero Aluminum-Doped Zinc Oxide

Jiaye Wu,Ze Tao Xie,Yanhua Sha,H. Y. Fu,Qian Li

DOI: https://doi.org/10.1364/fio.2020.jtu1a.34

2020-01-01

Abstract:We demonstrate the large and complex chromatic dispersion profile in epsilon-near-zero aluminum-doped zinc oxide. Results show very large and rapidly varying dispersion profile, and reveal its unsuitability for dispersion compensation devices.

What problem does this paper attempt to address?

Spatial Dispersion of Optical Thin Films

Xu Liu,Zhen-yue Luo,Wei-dong Shen,Xue-zheng Sun,Pei-fu Gu

DOI: https://doi.org/10.1117/12.796688

2008-01-01

Abstract:Due to the gradient of the phase shift as the wavelength in the reflection and transmission, the optical thin films coatings will present the spatial dispersion effect. The new kinds of super-prism thin film devices can be realized by well design interference effect inside of multilayer films to get the super-dispersion. The positive and negative spatial dispersion are existed in side of coatings, and is very sensitive to the angle of incident and wavelength. The analysis methods and the different kinds of spatial dispersion thin film filter devices and tunable spatial dispersion filter devices are presented in the paper.
Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Jianguo Lv,Changlong Liu,Wanbing Gong,Zhenfa Zi,Xiaoshuang Chen,Kai Huang,Tao Wang,Gang He,Xueping Song,Zhaoqi Sun

DOI: https://doi.org/10.1016/j.spmi.2012.02.014

IF: 3.22

2012-01-01

Superlattices and Microstructures

Abstract:Zinc oxide thin films were deposited on silicon substrates via hydrothermal method. Microstructures, surface topographies and optical properties of ZnO thin films were systematically investigated by X-ray diffraction, atomic force microscopy and fluorescence spectrophotometer. The mean grain size and surface roughness of the thin films decrease first and then increase with increasing the concentration of zinc nitrate hexahydrate. The photoluminescence spectra of ZnO thin films, excited by the 240, 320, 360, 380 and 400 nm excitation wavelength, were investigated in detail. Based on our analysis, it can be noted that mechanisms of the ultraviolet, violet and blue emissions are attributed to the transitions from the localized levels below the conduction band, zinc vacancy, interstitial zinc and extended interstitial zinc levels to the valance band, respectively. Blue-violet emissions of ZnO have great potential in light emitting and biological fluorescence labeling applications. (c) 2012 Elsevier Ltd. All rights reserved.
Comparative Study on Epsilon-Near-zero Transparent Conducting Oxides: High-order Chromatic Dispersions and Modeling of Ultrashort Pulse Interactions

Jiaye Wu,Ze Tao Xie,Yanhua Sha,H. Y. Fu,Qian Li

DOI: https://doi.org/10.1103/physreva.102.053503

IF: 2.971

2020-01-01

Physical Review A

Abstract:A comparative study on the chromatic dispersions and the interactions with ultrashort pulses in epsilon-near-zero (ENZ) transparent conducting oxides (TCOs) is theoretically presented. The ENZ TCOs exhibit rapidly varying and unprecedentedly large Nth-order dispersions in the ENZ region, which is exclusive to ENZ plasmonic materials. However, it is found that in both physical and mathematical senses, the concepts of high Nth-order chromatic dispersions are inapplicable for ENZ TCOs with Drude-like permittivity. Subsequently, the impacts of the complex permittivity dispersion profiles on ultrashort pulse interactions are discussed. Comparisons are made between propagation patterns in an ENZ AZO waveguide obtained from the nonlinear Schrodinger equation (NLSE) and Maxwell's equations, as well as between interactions of femtosecond pulses with different temporal widths in a subwavelength ENZ AZO slab. Results show that the well-received NLSE is not suitable for modeling ENZ TCOs in either case, and subwavelength interaction patterns with different pulse widths are quite different, where the shorter pulse can excite stronger localized resonance.
Berreman type perfect absorber based on epsilon near zero material gallium doped zinc oxide

Kuan-An Chen,Sen Liang,Jun Zheng,Chengcan Han,Yueguang Zhang,Lei Lin,Hui Ye

DOI: https://doi.org/10.1364/ome.490027

2023-01-01

Optical Materials Express

Abstract:Optical performances of epsilon near zero (ENZ) material gallium doped zinc oxide (GZO) can be effectively tuned by modulating substrate types, substrate heating temperatures, as well as post-annealing procedures. Four GZO film samples with imaginary part of permittivity & PRIME;& PRIME; at their ENZ wavelengths of & epsilon;ENZ = 0.26, 0.32, 0.50, 0.68 were deposited with radio frequency magnetron sputtering technology, all samples could reach perfect absorption at a certain incident & PRIME;& PRIME; angle and wavelength. A smaller & epsilon;ENZ of GZO film provides narrower bandwidth of near & PRIME;& PRIME; perfect absorption peak (higher Q-factor), while a larger & epsilon;ENZ tends to have a broader bandwidth. & PRIME;& PRIME; Furthermore, the incident angle allowed to achieve perfect absorption is also influenced by & epsilon;ENZ & PRIME;& PRIME; of GZO films. To realize near perfect absorption (reflectivity below 5%), larger & epsilon;ENZ provides a & PRIME;& PRIME; wider near perfect absorption window ( increment & theta;); smaller & epsilon;ENZ tends to have an easier condition to achieve perfect absorption.& COPY; 2023 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
Tunable Berreman Mode in Highly Conductive Organic Thin Films.

Xinlan Yu,Jiahuan Qiu,Qili Hu,Kuanan Chen,Jun Zheng,Sen Liang,Miao Du,Hui Ye

DOI: https://doi.org/10.1364/oe.472115

IF: 3.8

2022-01-01

Optics Express

Abstract:The unique performances of Epsilon-near-zero (ENZ) materials allow them to play a crucial role in many optoelectronic devices and have spawned a wide range of inventive uses. In this paper, we found that the modified PEDOT:PSS film formed with a kind of so-called "Metastable liquid-liquid Contact (MLLC)" solution treatment method can achieve a wide tuning of ENZ wavelength from 1270 nm to 1550 nm in the near-infrared region. We further analyzed the variation trend of imaginary permittivity for these samples with different ENZ wavelengths. The Berreman mode was successfully excited by a simple structural design to realize a tunable polarization absorber.
Ultrafast and broadband optical nonlinearity in aluminum doped zinc oxide colloidal nanocrystals

Xiangling Tian,Hongyu Luo,Rongfei Wei,Meng Liu,Zhaoliang Yang,Zhichao Luo,Haiming Zhu,Jianfeng Li,Jianrong Qiu

DOI: https://doi.org/10.1039/c9nr04337c

IF: 6.7

2019-08-07

Nanoscale

Abstract:Heavily doped oxide semiconductors can be tailored for widespread application in near-infrared (NIR) and mid-infrared (mid-IR) wavelength ranges because of both functional and fabrication advantages. Here, the ultrafast and broadband nonlinear saturable absorption of Al-doped zinc oxide nanocrystals (AZO NCs) is investigated by using the Z-scan technique and the pump-probe technique. The nonlinear absorption coefficient is as high as -1.90 × 103 cm GW-1 in the wide infrared (IR) wavelength range (from 800 to 3000 nm). Furthermore, a maximum optically induced refractive index of -1.85 × 10-1 cm2 GW-1 in the dielectric region and 2.09 × 10-1 cm2 GW-1 in the metallic region leads to an ultrafast nonlinear optical response (less than 350 femtoseconds). Mode-locked fiber lasers at 1064 nm and 1550 nm as well as Q-switched fiber lasers near 2000 nm and 3000 nm prove the use of employing AZO NCs as a broadband and ultrafast nonlinear optical device, which provides a valuable strategy and intuition for the development of nanomaterial-based photonic and optoelectronic devices in the NIR and mid-IR wavelength ranges.
Second-Order Non Linear Optical Properties of Zinc Oxide and Aluminum doped Zinc Oxide Thin Films grown by Atomic Layer deposition

Calford Odhiambo Otieno

2023-04-16

Abstract:In this paper, Second-order NLO properties of ZnO and AZO thin films from experimental results are discussed. Measurements were a single wavelength of 1.064 micrometers using the standard rotational Maker fringes technique in a transmission scheme. Further broadband dispersion of $\chi^{(2)}$ as characterized by harmonic generation over a broadband wavelength of 1.2-2.1 micrometers are discussed. Experimental results for the p-and s-polarization of the fundamental beam are presented. In the analysis alpha-Quartz was used as the standard reference material. All the experiments were conducted at room temperature.

Applied Physics
Epsilon-Near-Zero Al-Doped ZnO for Ultrafast Switching at Telecom Wavelengths: Outpacing the Traditional Amplitude-Bandwidth Trade-Off

N. Kinsey,C. DeVault,J. Kim,M. Ferrera,V. M. Shalaev,A. Boltasseva

DOI: https://doi.org/10.48550/arXiv.1503.07832

2015-03-26

Optics

Abstract:Transparent conducting oxides have recently gained great attention as CMOS-compatible materials for applications in nanophotonics due to their low optical loss, metal-like behavior, versatile/tailorable optical properties, and established fabrication procedures. In particular, aluminum doped zinc oxide (AZO) is very attractive because its dielectric permittivity can be engineered over a broad range in the near infrared and infrared. However, despite all these beneficial features, the slow (> 100 ps) electron-hole recombination time typical of these compounds still represents a fundamental limitation impeding ultrafast optical modulation. Here we report the first epsilon-near-zero AZO thin films which simultaneously exhibit ultra-fast carrier dynamics (excitation and recombination time below 1 ps) and an outstanding reflectance modulation up to 40% for very low pump fluence levels (< 4 mJ/cm2) at the telecom wavelength of 1.3 {\mu}m. The unique properties of the demonstrated AZO thin films are the result of a low temperature fabrication procedure promoting oxygen vacancies and an ultra-high carrier concentration. As a proof-of-concept, an all-optical AZO-based plasmonic modulator achieving 3 dB modulation in 7.5 {\mu}m and operating at THz frequencies is numerically demonstrated. Our results overcome the traditional "modulation depth vs. speed" trade-off by at least an order of magnitude, placing AZO among the most promising compounds for tunable/switchable nanophotonics.
Experimental Demonstration of Very High Negative Chromatic Dispersion Dual-Core Photonic Crystal Fiber

Sigang Yang,Yejin Zhang,Lina He,Shizhong Xie,Jinyan Li,Wei Chen,Zuowen Jiang,Jinggang Peng,Haiqing Li

DOI: https://doi.org/10.1109/ofc.2007.4348644

2007-01-01

Abstract:This paper reports the experimental drawing fabrication of very large negative chromatic dispersion dual-core photonic crystal fiber. The fabricated fiber has a peak chromatic dispersion value of -820 ps/(nm km).
Positive and Negative Dispersion in an Er3+-Doped Yttrium Aluminum Garnet Crystal

J Qian,HF Zhang,JY Gao

DOI: https://doi.org/10.1364/josab.21.001364

2004-01-01

Abstract:We investigate a four-level system in the Er3+-doped yttrium aluminum garnet crystal that can produce an absorption or gain doublet in the probe absorption spectrum when driven by a coherent field and incoherent pumping. It is found that the transparent linear positive or negative dispersion can occur between the doublet lines. We show that the group index of a probe pulse can be manipulated when we control the incoherent pumping and the coherent field.
Infrared Emission Characteristic and Microwave Loss Property of Aluminum Doped Zinc Oxide Nanoparticles

Yanjun Wang,Meijie Yu,Chaohui Huang,Qi Zheng,Haiping Zhou,Ze Zhang,Shengyao Zhao

DOI: https://doi.org/10.1016/j.ceramint.2020.09.088

IF: 5.532

2020-01-01

Ceramics International

Abstract:Aluminum doped zinc oxide (AZO) nanoparticles with different doping concentrations were prepared by a simple one-step hydrothermal synthesis method. The crystal structure, morphology, infrared absorption, infrared emission and microwave loss properties of the AZO nanoparticles were analyzed in detail. With the increase of the aluminum doping concentration, the crystal plane spacing does not change much, while the grain size increases gradually, and the thickness of the flakes and the average size of the particles have no significant change. With the increase of the Al doping concentration, the infrared emissivity of AZO tends to decrease first and then increase, among which the AZO infrared emissivity with Zn-ion ratio of 95:5 is the lowest. The electromagnetic parameters of AZO with a mole doping ratio of 93:7 were carried out at a frequency range of 2-18 GHz, the real part (epsilon ') and imaginary part (epsilon '') of the complex permittivity varies between 4.3-4.5 and 0.2-0.4, respectively, the dielectric loss tangent (tan delta) varies between 0.04 and 0.09.
Organic metallic epsilon-near-zero materials with large ultrafast optical nonlinearity

Qili Hu,Xinlan Yu,Hongqi Liu,Jiahuan Qiu,Wei Tang,Sen Liang,Linjun Li,Miao Du,Junjun Jia,Hui Ye

DOI: https://doi.org/10.48550/arXiv.2204.05528

2022-10-06

Abstract:Epsilon-near-zero (ENZ) materials have shown significant potential for nonlinear optical applications due to their ultrafast hot carriers and consequent optical nonlinearity enhancement. Modified poly(3,4-ethylenedioxythiophene) (PEDOT) films show metallic characteristics and a resultant ENZ wavelength near 1550nm through polar solvent treatment and annealing. The metallic PEDOT film exhibits an intrinsic optical nonlinear response that is comparable to gold and 100-fold higher than typical inorganic semiconductor ENZ materials due to {\pi}-conjugated delocalized electrons. Hot carriers generate a 22-fold increase in the optical nonlinearity coefficient of metallic PEDOT films at 1550 nm. Hot holes in metallic PEDOT films have a smaller enhancement multiple of carrier temperature and a longer relaxation time than hot electrons in inorganic ENZ materials due to the larger imaginary permittivity and hot-phonon bottleneck for carrier cooling. Our findings suggest that {\pi}-conjugated ENZ polymer may have unique ultrafast and nonlinear optical properties compared to inorganic ENZ materials, enabling new possibilities in on-chip nanophotonic devices, nonlinear optics, and plasmonics.

Optics,Materials Science
Extreme Nonlinear Optics in Epsilon-near-zero Materials

Yuanmu Yang

DOI: https://doi.org/10.23919/MOC46630.2019.8982850

2019-01-01

Abstract:We demonstrate extreme nonlinear optical properties leveraging epsilon-near-zero (ENZ) effect in plasmonic conductive metal oxide thin films. With the aid of high-mobility indium-doped cadmium oxide as the gateway plasmonic material, we show ultrafast all-optical switching and efficient UV high-harmonic generation.
Combining ε-Near-Zero Behavior and Stopped Light Energy Bands for Ultra-Low Reflection and Reduced Dispersion of Slow Light

Frank Bello,A Freddie Page,Andreas Pusch,Joachim M Hamm,John F Donegan,Ortwin Hess

DOI: https://doi.org/10.1038/s41598-017-08342-x

2017-08-18

Abstract:We investigate media which exhibits epsilon-near-zero (ENZ) behavior while simultaneously sustaining stopped light energy bands which contain multiple points of zero group velocity (ZGV). This allows the merging of state-of-the-art phenomena that was hitherto attainable in media that demonstrated these traits separately. Specifically, we demonstrate the existence of Ferrell-Berreman (FB) modes within frequency bands bounded by points of ZGV with the goal to improve the coupling efficiency and localization of light in the media. The FB mode is formed within a double layer, thin-film stack where at subwavelength thicknesses the structure exhibits a very low reflection due to ENZ behavior. In addition, the structure is engineered to promote a flattened frequency dispersion with a negative permittivity able to induce multiple points of ZGV. For proof-of-concept, we propose an oxide-semiconductor-oxide-insulator stack and discuss the useful optical properties that arise from combining both phenomena. A transfer matrix (TM) treatment is used to derive the reflectivity profile and dispersion curves. Results show the ability to reduce reflection below 0.05% in accordance with recent experimental data while simultaneously exciting a polariton mode exhibiting both reduced group velocity and group velocity dispersion (GVD).
Numerical Investigations on the Cascaded High Harmonic and Quasi-Supercontinuum Generations in Epsilon-Near-zero Aluminum-Doped Zinc Oxide Nanolayers

Jiaye Wu,Ze Tao Xie,H. Y. Fu,Qian Li

DOI: https://doi.org/10.1016/j.rinp.2021.104086

IF: 4.565

2021-01-01

Results in Physics

Abstract:The cascaded high harmonic generations (HHG) and quasi-supercontinuum (quasi-SC) generations by epsilon-near-zero (ENZ) aluminum-doped zinc oxide (AZO) nanolayers are demonstrated numerically. Due to AZO’s high second- and third-order nonlinear responses, the ENZ AZO nanolayer is capable of generating high harmonic waves up to the 15th order under the excitation of a pico- or femtosecond laser source. The conversion efficiencies for the third, fifth, and seventh harmonic generations, estimated by the ratio of the spectral peak power, are in theory, comparable with the experimental results of ENZ indium tin oxide and indium-doped cadmium oxide. By broadening HHG peaks, the quasi-SC generation in nanolayers with different thickness is discussed. The results of this work might be useful in designing nanoscale multiwavelength light sources.
Optical Properties of Al-Doped ZnO Films in the Infrared Region and Their Absorption Applications

Hua Zheng,Rong-Jun Zhang,Da-Hai Li,Xin Chen,Song-You Wang,Yu-Xiang Zheng,Meng-Jiao Li,Zhi-Gao Hu,Ning Dai,Liang-Yao Chen

DOI: https://doi.org/10.1186/s11671-018-2563-9

2018-01-01

Nanoscale Research Letters

Abstract:The optical properties of aluminum-doped zinc oxide (AZO) thin films were calculated rapidly and accurately by point-by-point analysis from spectroscopic ellipsometry (SE) data. It was demonstrated that there were two different physical mechanisms, i.e., the interfacial effect and crystallinity, for the thickness-dependent permittivity in the visible and infrared regions. In addition, there was a blue shift for the effective plasma frequency of AZO when the thickness increased, and the effective plasma frequency did not exist for AZO ultrathin films (< 25 nm) in the infrared region, which demonstrated that AZO ultrathin films could not be used as a negative index metamaterial. Based on detailed permittivity research, we designed a near-perfect absorber at 2–5 μm by etching AZO-ZnO alternative layers. The alternative layers matched the phase of reflected light, and the void cylinder arrays extended the high absorption range. Moreover, the AZO absorber demonstrated feasibility and applicability on different substrates.
Impact of aluminum doping on nonlinear absorption and ultrafast carriers dynamics of Al:CdO thin films

Kun Liu,Zhongguo Li,Xingzhi Wu,Yu Fang,Wenfa Zhou,Junyi Yang,Yingfei Sun,Ruipeng Niu,Zhangyang Shao,Lu Chen,Run Zhao,Yinglin Song

DOI: https://doi.org/10.1016/j.optlastec.2022.108675

2023-01-01

Abstract:Al:CdO thin films with different aluminum doping concentrations were prepared via magnetron sputtering technique with various sputtering power. It is found that the band gap Eg of Al:CdO films gradually increases with the increase of Al doping concentration, while the crystallinity became poor at high doping concentration. The nonlinear absorption properties of the film were characterized by nanosecond Z-scan measurements. The Z-scan results show that the nonlinear absorption coefficient β of Al:CdO thin films could be effectively modulated by Al concentration, and the maximum of β (2 × 10−6 m/W) is achieved around 20 W sputtering power. The carrier dynamics of Al:CdO thin films were studied by femtosecond pump–probe measurements. The results show that the carrier relaxation lifetime, carriers absorption cross section and carriers refraction volume are larger in the high Al concentration film. The optical limiting properties of Al: CdO films were also studied. These results demonstrate that the Al:CdO film is a promising candidate for applications in all optical switches and laser devices.

optics,physics, applied
Alloying induced disorder and localized excitonic states in ternary BexZn1−xO thin films

Longxing Su,Yuan Zhu,Yuanyuan An,Jin Xie,Zikang Tang

DOI: https://doi.org/10.1016/j.jallcom.2021.159867

IF: 6.2

2021-09-01

Journal of Alloys and Compounds

Abstract:II-VI ternary alloy is a promising material for advanced optoelectronic devices like ultraviolet (UV) photodetectors, light emitting diodes and laser diodes with high efficiency and low fabrication cost. The precise control over the doping element, concentration and crystal quality allows careful tuning of their band structures for novel optoelectronic properties. In this work, we report a prominent two-mode behavior in ternary BexZn1−xO alloy using resonant Raman spectroscopy as a probe. By combining with the excitonic localization and extrinsic Fröhlich interaction, we present a theoretical analysis on the resonant Raman scattering with different Be concentrations and tunable measured temperatures. Frequency blue shifts caused by compressed stress and two-mode phonons (ZnO-like and BeO-like A1(LO) phonons) scattering up to third orders revealed in this novel ternary alloy. In addition, alloying induced disorder and electronic states in the forbidden band result in the broadening of line width and the enhancement of LO-phonon oscillator strength. As a result, a high performance BeZnO based photoconductive type UV photodetector was realized, indicating the potential of BeZnO as a promising material for optoelectronic devices.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Preparation and Characterization of Al-doped ZnO Films and the Properties of the Composite Films with Ferroelectric Films

Jiaxiao LIU,Qingping DAI,Chaoyong DENG

DOI: https://doi.org/10.15958/j.cnki.gdxbzrb.2018.01.05

2018-01-01

Abstract:Al-doped ZnO(AZO) thin films were prepared on SiO2substrate by using pulsed laser deposition. X-ray diffraction analysis showed the c-axis orientation in the hexagonal structure. The AZO films exhibited that the resistivity dropped with the increase of doping content,and high transmittance in the visible region. Other optical properties of the films were investigated by spectroscopic ellipsometry. This work adopted Tauc-Lorentz dispersion model to characterize refractive index and extinction coefficient with various Al contents. The absorption edge blue-shifts with increase of Al content could be consistent with widening the band gap from fitting. In this work the (Pb0.9La0.1)(Zr0.52Ti0.48)O3(PLZT)films were prepared by using Sol-gel processing, and AZO/ PLZT com-posite films were fabricated through depositing AZO on PLZT films. Surface morphology and cross sectional struc-ture were assessed by SEM.The composite films showed clear ferroelectric hysteresis loops at electric fields of 300 kV/cm which provide a possibility of fabricating ferroelectric transparent thin-film transistor.
Large Lateral Photovoltaic Effect Observed in Nano Al-doped ZnO Films

Jing Lu,Hui Wang

DOI: https://doi.org/10.1364/oe.19.013806

IF: 3.8

2011-01-01

Optics Express

Abstract:Zinc oxide (ZnO), including a variety of metal-doped ZnO, as one kind of most important photoelectric materials, has been widely investigated and received enormous attention for a series of applications. In this work, we report a new finding which we call as lateral photovoltaic effect (LPE) in a nano Al-doped ZnO (ZAO) film based on ZAO/SiO2/Si homo-heterostructure. This large and stable LPE observed in ZAO is an important supplement to the existing ZnO properties. In addition, all data and analyses demonstrate ZAO film can also be a good candidate for new type position-sensitive detector (PSD) devices.

Large and Complex Chromatic Dispersion Profile in Epsilon-Near-Zero Aluminum-Doped Zinc Oxide

Spatial Dispersion of Optical Thin Films

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Comparative Study on Epsilon-Near-zero Transparent Conducting Oxides: High-order Chromatic Dispersions and Modeling of Ultrashort Pulse Interactions

Berreman type perfect absorber based on epsilon near zero material gallium doped zinc oxide

Tunable Berreman Mode in Highly Conductive Organic Thin Films.

Ultrafast and broadband optical nonlinearity in aluminum doped zinc oxide colloidal nanocrystals

Second-Order Non Linear Optical Properties of Zinc Oxide and Aluminum doped Zinc Oxide Thin Films grown by Atomic Layer deposition

Epsilon-Near-Zero Al-Doped ZnO for Ultrafast Switching at Telecom Wavelengths: Outpacing the Traditional Amplitude-Bandwidth Trade-Off

Experimental Demonstration of Very High Negative Chromatic Dispersion Dual-Core Photonic Crystal Fiber

Positive and Negative Dispersion in an Er3+-Doped Yttrium Aluminum Garnet Crystal

Infrared Emission Characteristic and Microwave Loss Property of Aluminum Doped Zinc Oxide Nanoparticles

Organic metallic epsilon-near-zero materials with large ultrafast optical nonlinearity

Extreme Nonlinear Optics in Epsilon-near-zero Materials

Combining ε-Near-Zero Behavior and Stopped Light Energy Bands for Ultra-Low Reflection and Reduced Dispersion of Slow Light

Numerical Investigations on the Cascaded High Harmonic and Quasi-Supercontinuum Generations in Epsilon-Near-zero Aluminum-Doped Zinc Oxide Nanolayers

Optical Properties of Al-Doped ZnO Films in the Infrared Region and Their Absorption Applications

Impact of aluminum doping on nonlinear absorption and ultrafast carriers dynamics of Al:CdO thin films

Alloying induced disorder and localized excitonic states in ternary BexZn1−xO thin films

Preparation and Characterization of Al-doped ZnO Films and the Properties of the Composite Films with Ferroelectric Films

Large Lateral Photovoltaic Effect Observed in Nano Al-doped ZnO Films