Abstract:All optical switches offer advanced control over the properties of light at ultrafast timescales using optical pulses as both the signal and the control. Limited only by material response times, these switches can operate at terahertz speeds, essential for technology-driven applications such as all-optical signal processing and ultrafast imaging, as well as for fundamental studies such as frequency translation and novel optical media concepts such as photonic time crystals. In conventional systems, the switching time is determined by the relaxation response of a single active material, which is challenging to adjust dynamically. This work demonstrates that the zero-to-zero response time of an all-optical switch can instead be varied through the combination of so-called fast and slow materials in a single device. When probed in the epsilon-near-zero operational regime of a material with a slow response time, namely, plasmonic titanium nitride, the switch exhibits a relatively slow, nanosecond response time. The response time then decreases reaching the picosecond time scale in the ENZ regime of the faster material, namely, aluminum-doped zinc oxide. Overall, the response time of the switch is shown to vary by two orders of magnitude in a single device and can be selectively controlled through the interaction of the probe signal with the constituent materials. The ability to adjust the switching speed by controlling the light-matter interaction in a multi-material structure provides an additional degree of freedom in all-optical switch design. Moreover, the proposed approach utilizes slower materials that are very robust and allow to enhance the field intensities while faster materials ensure an ultrafast dynamic response. The proposed control of the switching time could lead to new functionalities within key applications in multiband transmission, optical computing, and nonlinear optics.

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Si-CMOS compatible epsilon-near-zero metamaterial for two-color ultrafast all-optical switching

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Ultrafast all-optical switching enabled by epsilon-near-zero-tailored absorption in metal-insulator nanocavities

Broad-Band Ultrafast All-Optical Switching Based on Enhanced Nonlinear Absorption in Corrugated Indium Tin Oxide Films

Fast Thermo-Optical Modulators with Doped-Silicon Heaters Operating at 2 Μm.

Two-color all-optical switching in Si-compatible epsilon-near-zero hyperbolic metamaterials

High-efficiency Thin-Film Lithium Niobate Modulator with Highly Confined Optical Modes

Engineering the Temporal Dynamics with Fast and Slow Materials for All-Optical Switching

Epsilon-near-zero Medium for Optical Switches in a Monolithic Waveguide Chip at 1.9 Μm

Broadband, High‐Speed, and Large‐Amplitude Dynamic Optical Switching with Yttrium‐Doped Cadmium Oxide

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Engineering the temporal dynamics of all-optical switching with fast and slow materials

Ultrafast On‐chip Remotely‐Triggered All‐Optical Switching Based on Epsilon‐Near‐Zero Nanocomposites (laser Photonics Rev. 11(5)/2017)

Aluminum-doped zinc oxide thickness controllable wavelengths in visible light and high responsivity devices using interrupted flow atomic layer deposition

Ultrafast Dynamic Switching of Optical Response Based on Nonlinear Hyperbolic Metamaterial Platform

Transparent conductive oxide-based architectures for the electrical modulation of the optical response: A spectroscopic ellipsometry study