Abstract:Spintronic memory has been considered as one of the most promising nonvolatile memory candidates to address the leakage power consumption in the post-Moore's era. To date, the spintronic magnetic random access memory (MRAM) family has mainly evolved in four-generation technology advancement, from toggle-MRAM (product in 2006), to STT-MRAM (product in 2012), to SOT-MRAM (intensive R&D today), and to VCMA- MRAM (intensive R&D today). In addition, another spintronic memory, named racetrack memory (RM), proposed in 2008, has also evolved in two generations from domain wall (DW) based RM to skyrmion-based RM. On the other hand, from the architectural perspective, data transfer bandwidth and the related power consumption has become the most critical bottleneck in vonNeumann computing architecture, owing to the separation of the processor and the memory units and the performance mismatch between the two. Realization of the unity of computing and memory in the same place has opened up a promising research direction of computing-in-memory (CIM). Spintronic memory could be a promising technology to implement the CIM paradigm, owing to its intrinsic processing capability. Lots of interests have been attracted and a number of attempts have been made in this field, within both MRAM and RM. In this paper, we perform a mini review on the R&D evolution of spintronic memories: from memory to computing-in-memory. Particularly, we will introduce our recent work on advanced spintronic memories as well as CIM paradigms implemented within spintronic memories.

PRISM: Energy-Efficient Polymorphic Operation Based on Spin-Orbit Torque Memory for Reconfigurable Computing

Reconfigurable Processing in Memory Architecture Based on Spin Orbit Torque

Spintronic Memory-Based Reconfigurable Computing

Parallel Computing in Memory Paradigm Based on Reconfigurable Spin-Orbit Torque.

High performance and energy-efficient in-memory computing architecture based on SOT-MRAM

Low Power In-Memory Computing Based On Dual-Mode Sot-Mram

Ultra-fast and Energy-efficient Write-Computing Operation for Neuromorphic Computing

An STT-MRAM Based Reconfigurable Computing-in-memory Architecture for General Purpose Computing

An In-memory Highly Reconfigurable Logic Circuit Based on Diode-assisted Enhanced Magnetoresistance Device

Self-Terminating Write of Multi-Level Cell ReRAM for Efficient Neuromorphic Computing

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

Toward Energy-Efficient STT-MRAM Design With Multi-Modes Reconfiguration

Spintronic Memories: from Memory to Computing-in-Memory

Computing-in-Memory Paradigm Based on STT-MRAM with Synergetic Read/Write-Like Modes

An Energy-Efficient Computing-in-Memory (cim) Scheme Using Field-Free Spin-Orbit Torque (SOT) Magnetic RAMs

Parallel-Prefix Adder in Spin-Orbit Torque Magnetic RAM for High Bit-Width Non-Volatile Computation

Perspectives on Emerging Computation-in-Memory Paradigms.

Design of an Area-Efficient Computing in Memory Platform Based on STT-MRAM

Reconfigurable Nonvolatile Boolean Logic with One-Transistor-two-memristor for In-Memory Computing

Highly Efficient Reconfigurable Stateful Logic Operations Based on CuI Memristor-Only Arrays Prepared with a Solution-Based Process

Reconfigurable halide perovskite nanocrystal memristors for neuromorphic computing