Direct Patterned Growth of PECVD Graphene Transparent Electrodes on GaN LED Epiwafers Using Co As a Sacrificial Catalyst Layer

Fangzhu Xiong,Weiling Guo,Yibo Dong,Le Wang,Zaifa Du,Jie Sun

DOI: https://doi.org/10.1364/cleo_si.2020.sm4r.5

2020-01-01

Abstract:Co acts as both an etching mask and a catalyst for the growth of grapheme, high- quality graphene can be obtained quickly and at low temperatures for transparent electrode applications on GaN LEDs.

What problem does this paper attempt to address?

Transfer-free rapid growth of 2-inch wafer-scale patterned graphene as transparent conductive electrodes and heat spreaders for GaN LEDs

Fangzhu Xiong,Jie Sun,Penghao Tang,Weiling Guo,Yibo Dong,Zaifa Du,Shiwei Feng,Xuan Li

DOI: https://doi.org/10.1038/s41699-023-00434-9

IF: 10.516

2023-10-20

npj 2D Materials and Applications

Abstract:A technique for the transfer-free growth of 2-inch wafer-scale patterned graphene directly on GaN LED epilayers is introduced. High-quality graphene as transparent electrodes and heat spreaders is synthesized directly on GaN by PECVD at only 600 °C deposition temperature and within 3 min growth time. Co acts as both the catalyst for graphene growth and the dry etching mask for GaN mesas, which greatly improves the efficiency of the semiconductor device process. Elegantly, the graphene growth is in accordance with the shape of Co, which offers a lithography-free patterning technique of the graphene. Afterward, using our penetration etching method through the PMMA and graphene layers, the Co is peacefully removed, and in-situ Ohmic contact is achieved between the graphene and p-GaN where the contact resistivity is only 0.421 Ω cm 2 . The graphene sheet resistance is as low as 631.2 Ω sq −1 . The device is also superior to the counterpart graphene-free LED in terms of heat spreading behavior, as evidenced by the lower junction temperature and thermal resistance. Most importantly, the developed technique produces graphene with excellent performance and is intrinsically more scalable, controllable, and semiconductor industry compatible than traditionally transferred graphene.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
GaN LEDs with in situ synthesized transparent graphene heat-spreading electrodes fabricated by PECVD and penetration etching

Fangzhu Xiong,Jie Sun,Matthew T. Cole,Weiling Guo,Chunli Yan,Yibo Dong,Le Wang,Zaifa Du,Shiwei Feng,Xuan Li,Tailiang Guo,Qun Yan

DOI: https://doi.org/10.1039/d1tc05279a

IF: 6.4

2022-01-01

Journal of Materials Chemistry C

Abstract:High-quality and patterned graphene is grown directly on GaN LED arrays for transparent and heat-spreading electrodes. The CVD is done at 600 °C for 2 min. Sacrificial Co acts both as GaN mesa etching mask and transfer-free graphene growth catalyst.

materials science, multidisciplinary,physics, applied
Direct Growth of Transparent Graphene Electrodes on GaN LEDs Using Metal Proximity Catalytic Effect

Fangzhu Xiong,Weiling Guo,Le Wang,Zaifa Du,Jie Sun

DOI: https://doi.org/10.1364/cleo_si.2021.sw3f.3

2021-01-01

Abstract:High-quality graphene was obtained directly on GaN epiwafers at low temperature using the metal proximity catalytic effect. Metal catalyse graphene without contacting with it ensure high performance of graphene-GaN LED. (c) 2021TheAuthor(s)
Transfer-Free Graphene-Like Thin Films on GaN LED Epiwafers Grown by PECVD Using an Ultrathin Pt Catalyst for Transparent Electrode Applications

Fangzhu Xiong,Weiling Guo,Shiwei Feng,Xuan Li,Zaifa Du,Le Wang,Jun Deng,Jie Sun

DOI: https://doi.org/10.3390/ma12213533

2019-10-28

Abstract:In this work, we grew transfer-free graphene-like thin films (GLTFs) directly on gallium nitride (GaN)/sapphire light-emitting diode (LED) substrates. Their electrical, optical and thermal properties were studied for transparent electrode applications. Ultrathin platinum (2 nm) was used as the catalyst in the plasma-enhanced chemical vapor deposition (PECVD). The growth parameters were adjusted such that the high temperature exposure of GaN wafers was reduced to its minimum (deposition temperature as low as 600 °C) to ensure the intactness of GaN epilayers. In a comparison study of the Pt-GLTF GaN LED devices and Pt-only LED devices, the former was found to be superior in most aspects, including surface sheet resistance, power consumption, and temperature distribution, but not in optical transmission. This confirmed that the as-developed GLTF-based transparent electrodes had good current spreading, current injection and thermal spreading functionalities. Most importantly, the technique presented herein does not involve any material transfer, rendering a scalable, controllable, reproducible and semiconductor industry-compatible solution for transparent electrodes in GaN-based optoelectronic devices.
Direct Formation of Wafer-Scale Single-Layer Graphene Films on the Rough Surface Substrate by PECVD

Liangchao Guo,Zhenyu Zhang,Hongyan Sun,Dan Dai,Junfeng Cui,Mingzheng Li,Yang Xu,Mingsheng Xu,Yuefeng Du,Nan Jiang,Feng Huang,Cheng-Te Lin

DOI: https://doi.org/10.1016/j.carbon.2017.12.023

IF: 10.9

2018-01-01

Carbon

Abstract:The technical advance of plasma enhanced chemical vapor deposition (PECVD) exhibits the potential to grow large-area high-quality graphene films at relatively low growth temperature, which is beneficial to the fabrication of graphene-based electronic devices/sensors and transparent electrode. However, it remains a challenge to overcome the degradation of graphene quality during growth by PECVD, due to the continuous bombardment of plasma ions on the catalyst surface. Herein, the combined techniques of PECVD and the growth of graphene underneath the catalyst layer were proposed. As a result, transfer-free single-layer graphene films with 2.5 inch in diameter on quartz substrate can be obtained with the growth temperature of 700 degrees C, which is 250 degrees C lower than that for graphene synthesis using thermal CVD. The graphene films prepared by our method show the ability to form on the rough surfaces with millimeter-scale grooves and have minimal surface contamination, compared to that of conventionally transferred CVD graphene. (C) 2017 Elsevier Ltd. All rights reserved.
A Patterning Technology of Transfer-Free Graphene for Transparent Electrodes of Near-Ultraviolet Light-Emitting Diodes

Penghao Tang,Jie Sun,Yu Mei,Zaifa Du,Aoqi Fang,Fangzhu Xiong,Weiling Guo

DOI: https://doi.org/10.1039/d3tc04656g

IF: 6.4

2024-01-01

Journal of Materials Chemistry C

Abstract:Graphene is well known for its excellent physical and chemical properties and can be used in various fields. Its application technology has become an important direction of research. In this study, a patterning technology of transfer-free graphene is reported, and graphene transparent electrodes of near-ultraviolet light-emitting diodes (LEDs) are fabricated accordingly. In the scheme, Ni film plays the dual role of an etching mask and graphene growth catalyst, realizing the patterning growth of graphene. An SiO2 isolation layer is deposited between Ni and the substrate, avoiding the fusing of the substrate with Ni by the high temperature of graphene growth, which makes the method applicable to nominally any high temperature-compatible metal and semiconductor substrates. Both Ni and SiO2 are then removed, thus directly achieving a good contact between graphene and the substrate. The graphene transparent electrodes fabricated by this method greatly improves the performance of near-ultraviolet LEDs, which is even better than that of indium tin oxide (ITO) in the near-ultraviolet band based on the optical measurement results. This scheme avoids any possible damage and contamination of graphene in traditional transfer and lithography patterning processes, which is scalable and suitable for real applications. A technology for the fabrication of transfer-free, patterned graphene on semiconductor or weakly catalytic metal substrate is presented, and the graphene transparent electrodes on GaN-based LED with 398 nm wavelength is fabricated accordingly.
Graphene Transparent Electrodes Grown by Rapid Chemical Vapor Deposition with Ultrathin Indium Tin Oxide Contact Layers for Gan Light Emitting Diodes

Xu Kun,Xu Chen,Deng Jun,Zhu Yanxu,Guo Weiling,Mao Mingming,Zheng Lei,Sun Jie

DOI: https://doi.org/10.1063/1.4802798

IF: 4

2013-01-01

Applied Physics Letters

Abstract:By virtue of the small active volume around Cu catalyst, graphene is synthesized by fast chemical vapor deposition (CVD) in a cold wall vertical system. Despite being highly polycrystalline, it is as conductive and transparent as standard graphene and can be used in light emitting diodes as transparent electrodes. 7–10 nm indium tin oxide (ITO) contact layer is inserted between the graphene and p-GaN to enhance hole injection. Devices with forward voltage and transparency comparable to those using traditional 240 nm ITO are achieved with better ultraviolet performances, hinting the promising future for application-oriented graphene by rapid CVD.
Nickel-Assisted Transfer-Free Technology of Graphene Chemical Vapor Deposition on GaN for Improving the Electrical Performance of Light-Emitting Diodes

Penghao Tang,Fangzhu Xiong,Zaifa Du,Kai Li,Yu Mei,Weiling Guo,Jie Sun

DOI: https://doi.org/10.3390/cryst12101497

IF: 2.7

2022-01-01

Crystals

Abstract:With the rapid development of graphene technology, today graphene performs well in the application of light-emitting diode (LED) transparent electrodes. Naturally, high-quality contact between the graphene and the GaN underneath is very important. This paper reports a process for nickel-assisted transfer-free technology of graphene chemical vapor deposition on GaN. The nickel film plays the dual role of etching mask and growth catalyst, and is removed by the subsequent "penetration etching" process, achieving good direct contact between the graphene and GaN. The results show that the graphene effectively improves the current spreading of GaN-based LEDs and enhances their electrical performance. This scheme avoids the wrinkles and cracks of graphene from the transfer process, and is not only suitable for the combination of graphene and GaN-based LEDs, but also provides a solution for the integration of graphene and other materials.
Direct Growth of Graphene on Gallium Nitride by Using Chemical Vapor Deposition Without Extra Catalyst

Zhao Yun,Wang Gang,Yang Huai-Chao,An Tie-Lei,Chen Min-Jiang,Yu Fang,Tao Li,Yang Jian-Kun,Wei Tong-Bo,Duan Rui-Fei,Sun Lian-Feng

DOI: https://doi.org/10.1088/1674-1056/23/9/096802

2014-01-01

Abstract:Graphene on gallium nitride (GaN) will be quite useful when the graphene is used as transparent electrodes to improve the performance of gallium nitride devices. In this work, we report the direct synthesis of graphene on GaN without an extra catalyst by chemical vapor deposition. Raman spectra indicate that the graphene films are uniform and about 5-6 layers in thickness. Meanwhile, the effects of growth temperatures on the growth of graphene films are systematically studied, of which 950 degrees C is found to be the optimum growth temperature. The sheet resistance of the grown graphene is 41.1 Omega/square, which is close to the lowest sheet resistance of transferred graphene reported. The mechanism of graphene growth on GaN is proposed and discussed in detail. XRD spectra and photoluminescence spectra indicate that the quality of GaN epi-layers will not be affected after the growth of graphene.
Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Libo Gao,Hai Xu,Linjun Li,Yang Yang,Qiang Fu,Xinhe Bao,Kian Ping Loh

DOI: https://doi.org/10.1088/2053-1583/3/2/021001

IF: 6.861

2016-01-01

2D Materials

Abstract:The chemical vapor deposition (CVD) of graphene on Cu has attracted much attention because of its industrial scalability. Herein, we report inductively coupled plasma-assisted CVD of epitaxially grown graphene on (111)-textured Cu film alloyed with a small amount of Ni, where large area high quality graphene film can be grown in less than 5 min at 800 degrees C, thus affording industrial scalability. The epitaxially grown graphene films on (111)-textured Cu contain grains which are predominantly aligned with the Cu lattice and about 10% of 30 degrees-rotated grains (anti-grains). Such graphene films are exclusively monolayer and possess good electrical conductivity, high carrier mobility, and room temperature quantum Hall effect. Magnetoresistance measurements reveal that the reduction of the grain sizes from 150 nmto 50 nm produce increasing Anderson localization and the appearance of a transport gap. Owing to the presence of grain boundaries in these anti-grains, epitaxially grown graphene films possess n-type characteristics and exhibit ultra-high sensitivity to adsorbates.
Effect of catalyst film thickness on the structures of vertically-oriented few-layer graphene grown by PECVD

j l qi,fu zhang,xu wang,l x zhang,jian cao,j c feng

DOI: https://doi.org/10.1039/c4ra08109a

IF: 4.036

2014-01-01

RSC Advances

Abstract:The growth behavior of vertically-oriented few-layer graphene (V-FLG), produced by radio-frequency plasma enhanced chemical vapor deposition (PECVD), is studied here as a function of catalyst and catalyst film thickness. The Co catalyst and catalyst film thickness were observed as being crucial for the growth states and morphology of V-FLG. V-FLG showed a slower growth rate and lower density on substrates without catalyst than with catalyst due to the V-FLG nucleation on the former being prevented. It demonstrates that the growth mechanism of V-FLG on the Co catalyst film is not similar to the catalytic growth mechanism of CNTs, which is a defect nucleation mechanism. During PECVD process, the highly reactive C radicals can preferentially form CNTs or graphite-shell by Co catalysis, then trigger nucleation on the surface of CNTs or graphite-shell for V-FLG growth. The excellent field emission properties of the V-FLG and FLG-CNTs make them promising candidates for high-performance field emission emitters.
Graphene-Based Transparent Conductive Electrodes for Gan-Based Light Emitting Diodes: Challenges and Countermeasures

Liancheng Wang,Wei Liu,Yiyun Zhang,Zi-Hui Zhang,Swee Tiam Tan,Xiaoyan Yi,Guohong Wang,Xiaowei Sun,Hongwei Zhu,Hilmi Volkan Demir

DOI: https://doi.org/10.1016/j.nanoen.2014.12.035

IF: 17.6

2015-01-01

Nano Energy

Abstract:Graphene, with attractive electrical, optical, mechanical and thermal properties, is considered to be an ideal candidate for transparent conductive electrodes (TCEs) in many optoelectronic devices, including III-nitride based devices. However, high contact resistivity (ρc) between graphene and GaN (especially p-GaN) has become a major challenge for graphene TCEs utilization in GaN-based light-emitting diodes (LEDs). Here, we analyzed the graphene/GaN contact junction in detail and reviewed the current research progress for reducing ρc in graphene TCEs on GaN LEDs, including interface engineering, chemical doping and tunnel junction design. We also analyzed the current diffusion length for a single layer graphene (SLG) and multiple layer graphene (MLG) TCEs. Finally, to improve the fabrication process compatibility and simplicity with paramount reproduction, a method of directly growing graphene films on GaN by chemical vapor deposition (CVD) is proposed. We also give a short analysis on the reliability of graphene TCEs for GaN-based LEDs. It is believed that this is the ultimate solution for graphene TCEs application for GaN-based LEDs and others in general for other opto- and electrical devices.
Nanopatterned Graphene: Direct Growth of Nanopatterned Graphene on Sapphire and Its Application in Light Emitting Diodes (Adv. Funct. Mater. 31/2020)

Zhaolong Chen,Hongliang Chang,Ting Cheng,Tongbo Wei,Ruoyu Wang,Shenyuan Yang,Zhipeng Dou,Bingyao Liu,Shishu Zhang,Yadian Xie,Zhiqiang Liu,Yanfeng Zhang,Jinmin Li,Feng Ding,Peng Gao,Zhongfan Liu

DOI: https://doi.org/10.1002/adfm.202070209

IF: 19

2020-08-01

Advanced Functional Materials

Abstract:<p>In article number <a href="https://doi.org/10.1002/adfm.202001483">2001483</a>, Tongbo Wei, Feng Ding, Peng Gao, Zhongfan Liu, and co‐workers report the direct growth of nano‐patterned graphene on an oxide substrate via selective growth on the c‐plane of a nano‐patterned sapphire substrate, as guided by density functional theory calculations and analogue simulations. The thus obtained nano‐patterned graphene shows potential applications such as high‐performance light‐emitting diodes. </p>

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
The Interface of Epitaxial Nanographene on GaN by PECVD

Zongyao Li,Yu Xu,Bing Cao,Lin Qi,En Zhao,Song Yang,Chinhua Wang,Jianfeng Wang,Guangyu Zhang,Ke Xu

DOI: https://doi.org/10.1063/1.5111443

IF: 1.697

2019-01-01

AIP Advances

Abstract:It is believed that directly synthesized graphene on semiconductor and other non-catalytic substrates is a promising route to enable facile graphene integration into commercial electronic and optoelectronic devices. Here, the plasma enhanced chemical vapor deposition (PECVD) method has been used to synthesize nanographene directly on gallium nitride (GaN) at a low temperature (550°C). The epitaxial nanographene equipped optical transmittance and conductivity comparable to reduced graphene oxide or chemical exfoliated graphene. The Raman spectroscopy and atomic force microscopy (AFM) of the samples before and after growth have been compared. Besides, the interface between nanographene and GaN has been investigated by X-ray photoelectron spectroscopy (XPS). This research will be meaningful for directly integrating graphene with GaN-based optoelectronic and electronic devices.
Epitaxial Lateral Overgrowth of GaN Using Hexagonal Patterned PECVD and Wet Transferred Graphene Masks by MOCVD

Jiahao Tao,Yu Xu,Jianjie Li,Xin Cai,Yuning Wang,Guobin Wang,Bing Cao,Ke Xu

DOI: https://doi.org/10.1109/sslchinaifws57942.2023.10071045

2022-01-01

Abstract:Epitaxial lateral overgrowth (ELOG) is one of the effective means to improve crystal quality. In this work, gallium nitride (GaN) was grown using a hexagonal patterned graphene as mask via ELOG by metal organic chemical vapor deposition (MOCVD). Two kinds of multi-layer graphene were adopted on GaN/Sapphire compound substrate respectively, one was graphene by plasma enhanced chemical vapor deposition (PECVD), another was wet transferred graphene by chemical vapor deposition (CVD) growth on copper foil. We compared the ELOG behavior of epitaxial GaN and found that the integrity and homogeneity of PECVD graphene made GaN preferentially nucleate and completely cover in the window region. However, because of the large number of defects and winkles introduced during the transfer process, GaN nucleated both in the window region and mask region on the transferred graphene substrate, consequently, epitaxial GaN on transferred graphene was not a ELOG mode. At the same time, we found that both PECVD graphene and transferred graphene was gradually decomposed during the growth process of GaN, but PECVD graphene could still act the mask role. Finally, ELOG GaN on PECVD graphene was obtained and the threading dislocations of GaN on PECVD graphene were greatly reduced and the dislocation distribution was similar to the window pattern. In contrast, the transferred graphene did not act as a mask, and the threading dislocation distribution of epitaxial GaN did not show any regularity.
Catalyst-Free Growth of Nanographene Films on Various Substrates

Lianchang Zhang,Zhiwen Shi,Yi Wang,Rong Yang,Dongxia Shi,Guangyu Zhang

DOI: https://doi.org/10.1007/s12274-010-0086-5

IF: 9.9

2010-01-01

Nano Research

Abstract:We have developed a new method to grow uniform graphene films directly on various substrates, such as insulators, semiconductors, and even metals, without using any catalyst. The growth was carried out using a remote plasma enhancement chemical vapor deposition (r-PECVD) system at relatively low temperatures, enabling the deposition of graphene films up to 4-inch wafer scale. Scanning tunneling microscopy (STM) confirmed that the films are made up of nanocrystalline graphene particles of tens of nanometers in lateral size. The growth mechanism for the nanographene is analogous to that for diamond grown by PECVD methods, in spite of sp2 carbon atoms being formed in the case of graphene rather than sp3 carbon atoms as in diamond. This growth approach is simple, low-cost, and scalable, and might have potential applications in fields such as thin film resistors, gas sensors, electrode materials, and transparent conductive films.
A Growth Mechanism for Graphene Deposited on Polycrystalline Co Film by Plasma Enhanced Chemical Vapor Deposition

Shumin Wang,Liang Qiao,Cuimei Zhao,Xiaoming Zhang,Jianli Chen,Hongwei Tian,Weitao Zheng,Zhengbo Han

DOI: https://doi.org/10.1039/c3nj41136b

IF: 3.3

2013-01-01

New Journal of Chemistry

Abstract:Graphene is deposited on polycrystalline Co film by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD), and the effect of deposition time on the crystallinity of graphene, such as graphitic degree and in-plane crystallite size, is explored. The findings are that graphene can be obtained on polycrystalline Co film for only 15 s, suggesting that a direct growth mechanism plays an important role in the formation of graphene. The first-principles density functional theory (DFT) results also reveal that the graphene is more easily formed on Co via a surface direct growth mechanism than that via a precipitation mechanism. Our studies are critical in guiding the graphene growth process as we try to achieve the highest quality graphene for electronic devices.
Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices.

Ziwen Wang,Zhongying Xue,Miao Zhang,Yongqiang Wang,Xiaoming Xie,Paul K Chu,Peng Zhou,Zengfeng Di,Xi Wang

DOI: https://doi.org/10.1002/smll.201700929

IF: 13.3

2017-01-01

Small

Abstract:Direct growth of graphene on dielectric substrates is a prerequisite to the development of graphene-based electronic and optoelectronic devices. However, the current graphene synthesis methods on dielectric substrates always involve a metal contamination problem, and the direct production of graphene patterns still remains unattainable and challenging. Herein, a semiconducting, germanium (Ge)-assisted, chemical vapor deposition approach is proposed to produce monolayer graphene directly on arbitrary dielectric substrates. By the prepatterning of a catalytic Ge layer, the graphene with desired pattern can be achieved conveniently and readily. Due to the catalysis of Ge, monolayer graphene is able to form on Ge-covered dielectric substrates including SiO2/Si, quartz glass, and sapphire substrates. Optimization of the process parameters leads to complete sublimation of the catalytic Ge layer during or immediately after formation of the monolayer graphene, enabling direct deposition of large-area and continuous graphene on dielectric substrates. The large-area, highly conductive graphene synthesized on a transparent dielectric substrate using the proposed approach has exhibited a wide range of applications, including in both defogger and thermochromic displays, as already successfully demonstrated here.
Direct Growth of GaN on Sapphire with Non-Catalytic CVD Graphene Layers at High Temperature

Yu Xu,Zongyao Li,Lin Qi,En Zhao,Demin Cai,Yumin Zhang,Yongxin Qiu,Guoqiang Ren,Jicai Zhang,Jianfeng Wang,Bing Cao,Ke Xu

DOI: https://doi.org/10.1109/ifws.2016.7803766

2016-01-01

Abstract:Today, heteroepitaxial GaN films on sapphire have focused on conventional two-step growth process using low temperature GaN buffer layer. Here, we show the direct growth of GaN films on sapphire by using a graphene layer at high temperature, which simplified the GaN growth process. The graphene is directly synthesized on non-catalytic sapphire substrate by chemical vapor deposition without problematic transfer processes, using C2H4 as a carbon source at the temperature of 1200 o C. The synthesized graphene has been characterized by Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM). We have compared the GaN grown on sapphire with and without graphene. The single crystal, smooth surface GaN films has been obtained on sapphire with graphene, and the nucleation of GaN films has been discussed. The GaN films illuminated high near-band-edge emission and good ultraviolet photosensor. It demonstrates that graphene is a potential, useful buffer layer for heteroepitaxy of high quality GaN films.
Study on Nucleation and Growth Mode of GaN on Patterned Graphene by Epitaxial Lateral Overgrowth

Jianjie Li,Yu Xu,Jiahao Tao,Xin Cai,Yuning Wang,Guobin Wang,Bing Cao,Ke Xu

DOI: https://doi.org/10.2139/ssrn.4244593

2022-01-01

SSRN Electronic Journal

Abstract:In the past two decades, using dielectric materials such as SiO2 as a mask for the lateral epitaxial growth of gallium nitride (GaN) has matured, but the properties of films using amorphous mask materials are already difficult to improve, which limits the application of GaN. In this study, the quality of GaN films was enhanced by epitaxial lateral overgrowth (ELOG) on graphene mask/GaN template by metal-organic chemical vapour deposition (MOCVD). We found two types of nucleation and growth mode of GaN on compound substrate, and that graphene was slowly and continuously destroyed during growth. Using scanning transmission electron microscope (STEM) and Raman spectroscopy to analyse the graphene between the GaN epilayer and the substrate at various periods of growth, the results showed that graphene was stable and had a distinct layer structure at the initial stage of growth, and as the growth processed, the graphene masks were disrupted due to the decomposition of the GaN of substrate, and eventually air gaps of approximately 240 nm appeared at the positions of graphene masks. Although graphene is gradually decomposed, graphene masks still effectively block the dislocation from extending into the epilayer in the process, and GaN still maintains the trend of ELOG. The dislocation density of the GaN film is Â , which can be estimated visually by cathodoluminescence (CL). This feature of graphene provides a valuable strategy for the future research of large area self-standing GaN films on GaN templates.

Direct Patterned Growth of PECVD Graphene Transparent Electrodes on GaN LED Epiwafers Using Co As a Sacrificial Catalyst Layer

Transfer-free rapid growth of 2-inch wafer-scale patterned graphene as transparent conductive electrodes and heat spreaders for GaN LEDs

GaN LEDs with in situ synthesized transparent graphene heat-spreading electrodes fabricated by PECVD and penetration etching

Direct Growth of Transparent Graphene Electrodes on GaN LEDs Using Metal Proximity Catalytic Effect

Transfer-Free Graphene-Like Thin Films on GaN LED Epiwafers Grown by PECVD Using an Ultrathin Pt Catalyst for Transparent Electrode Applications

Direct Formation of Wafer-Scale Single-Layer Graphene Films on the Rough Surface Substrate by PECVD

A Patterning Technology of Transfer-Free Graphene for Transparent Electrodes of Near-Ultraviolet Light-Emitting Diodes

Graphene Transparent Electrodes Grown by Rapid Chemical Vapor Deposition with Ultrathin Indium Tin Oxide Contact Layers for Gan Light Emitting Diodes

Nickel-Assisted Transfer-Free Technology of Graphene Chemical Vapor Deposition on GaN for Improving the Electrical Performance of Light-Emitting Diodes

Direct Growth of Graphene on Gallium Nitride by Using Chemical Vapor Deposition Without Extra Catalyst

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Effect of catalyst film thickness on the structures of vertically-oriented few-layer graphene grown by PECVD

Graphene-Based Transparent Conductive Electrodes for Gan-Based Light Emitting Diodes: Challenges and Countermeasures

Nanopatterned Graphene: Direct Growth of Nanopatterned Graphene on Sapphire and Its Application in Light Emitting Diodes (Adv. Funct. Mater. 31/2020)

The Interface of Epitaxial Nanographene on GaN by PECVD

Epitaxial Lateral Overgrowth of GaN Using Hexagonal Patterned PECVD and Wet Transferred Graphene Masks by MOCVD

Catalyst-Free Growth of Nanographene Films on Various Substrates

A Growth Mechanism for Graphene Deposited on Polycrystalline Co Film by Plasma Enhanced Chemical Vapor Deposition

Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices.

Direct Growth of GaN on Sapphire with Non-Catalytic CVD Graphene Layers at High Temperature

Study on Nucleation and Growth Mode of GaN on Patterned Graphene by Epitaxial Lateral Overgrowth