Abstract:Because of its atomic thickness, excellent properties, and widespread applications, graphene is regarded as one of the most promising candidate materials for nanoelectronics. The wider use of graphene will require processes that produce this material in a controllable manner. In this Account, we focus on our recent studies of the controllable chemical vapor deposition (CVD) growth of graphene, especially few-layer graphene (FLG), and the applications of this material in electronic devices. CVD provides various means of control over the morphologies of the produced graph ene. We studied several variables that can affect the CVD growth of graphene, including the catalyst, gas flow rate, growth time, and growth temperature and successfully achieved the controlled growth of hexagonal graphene crystals. Moreover, we developed several modified CVD methods for the controlled growth of FLGs. Patterned CVD produced FLGs with desired shapes in required areas. By introducing dopant precursor in the CVD process, we produced substitutionally doped FLGs, avoiding the typically complicated post-treatment processes for graphene doping. We developed a template CVD method to produce FLG ribbons with controllable morphologies on a large scale. An oxidation-activated surface facilitated the CVD growth of polycrystalline graphene without the use of a metal catalyst or a complicated postgrowth transfer process. In devices, CVD offers a controllable means to modulate the electronic properties of the graphene samples and to improve device performance. Using CVD-grown hexagonal graphene crystals as the channel materials in field-effect transistors (FETs), we improved carrier mobility. Substitutional doping of graphene in CVD opened a band gap for efficient FET operation and modulated the Fermi energy level for n-type or p-type features. The similarity between the chemical structure of graphene and organic semiconductors suggests potential applications of graphene in organic devices. We used patterned CVD FLGs as the bottom electrodes in pentacene FETs. The strong π-π interactions between graphene and pentacene produced an excellent interface with low contact resistance and a reduced injection barrier, which dramatically enhances the device performance. We also fabricated reversible nanoelectromechanical (NEM) switches and a logic gate using the FLG ribbons produced using our template CVD method. In summary, CVD provides a controllable means to produce graphene samples with both large area and high quality. We developed several modified CVD methods to produce FLG samples with controlled shape, location, edge, layer, dopant, and growth substrate. As a result, we can modulate the properties of FLGs, which provides materials that could be used in FETs, OFETs, and NEM devices. Despite remarkable advances in this field, further exploration is required to produce consistent, homogeneous graphene samples with single layer, single crystal, and large area for graphene-based electronics.

Effect of catalyst film thickness on the structures of vertically-oriented few-layer graphene grown by PECVD

Direct Formation of Wafer-Scale Single-Layer Graphene Films on the Rough Surface Substrate by PECVD

Preferential Growth of Carbon Nanotubes/Nanofibers Using Lithographically Patterned Catalysts

High Crystallinity Vertical Few-Layer Graphene Grown Using Template Method Assisted ICPCVD Approach.

A Growth Mechanism for Graphene Deposited on Polycrystalline Co Film by Plasma Enhanced Chemical Vapor Deposition

Effects of Substrates on Nucleation, Growth and Electrical Property of Vertical Few-Layer Graphene

Facile growth of vertically-aligned graphene nanosheets via thermal CVD: The experimental and theoretical investigations

Effect of Ni film structure and surface morphology on the growth of graphene by PECVD

Controllable Chemical Vapor Deposition Growth of Few Layer Graphene for Electronic Devices.

Confirming the Key Role of Ar+ Ion Bombardment in the Growth Feature of Nanostructured Carbon Materials by PECVD.

Advancements in Plasma-Enhanced Chemical Vapor Deposition for Producing Vertical Graphene Nanowalls

Copper-Assisted Direct Growth of Vertical Graphene Nanosheets on Glass Substrates by Low-Temperature Plasma-Enhanced Chemical Vapour Deposition Process

Graphene Growth by Transfer-Free CVD Method Using Cobalt/Nickel Catalyst Layer

Field Emission Characteristics from Vertical Few-Layer Graphene Growth on Graphite Substrate

Graphene nanowalls formation investigated by Electron Energy Loss Spectroscopy

Low-temperature low-power PECVD synthesis of vertically aligned graphene

A comparative study of graphene growth by APCVD, LPCVD and PECVD

The nucleation and growth of graphene under a controlled atmosphere during radio frequency-plasma-enhanced chemical vapor deposition

Nucleation and growth dynamics of graphene grown by radio frequency plasma-enhanced chemical vapor deposition

Investigation on the Formation Mechanism of Double-Layer Vertically Aligned Carbon Nanotube Arrays via Single-Step Chemical Vapour Deposition

Layer-by-layer Growth of Bilayer Graphene Single-Crystals Enabled by Proximity Catalytic Activity