Abstract:In the context of rapid social development, it is urgent to address the increasingly prominent issues of fossil energy depletion and environmental pollution. As a result, research has focused on the creation of new clean energy sources such as solar, wind,biological, geothermal, and hydrogen. Hydrogen energy is one of these new energy sources that has drawn a lot of attention because of its low weight, good thermal conductivity, high heating value, rich utilization forms, and diverse storage states. Nowadays, one of the most significant methods for producing clean energy is photoelectrochemical（PEC） water splitting for hydrogen. However, the intrinsic drawbacks of commonly used semiconductors, such as the low light absorption efficiency, high carrier recombination rate, and slow oxygen evolution kinetics, have become the main barriers preventing their advancement in PEC water splitting. This study used anodic oxidation to create N-doped 4H-SiC nanowire arrays（NWAs） from N-doped 4H-SiC single crystalline wafers. It can be verified that the highly oriented N-doped 4H-SiC NWAs are fully exposed by removing the cap layer. Additionally, the single bamboo-shaped nanowire that was produced has a diameter of ～30–50 nm. Focusing on the optimization of the oxygen evolution reaction（OER） conditions, the NWAs were used as an integrated photoanode in a typical three-electrode system to achieve effective PEC water splitting for hydrogen production under illumination and electric field. Notably, the N-doped 4H-SiC NWAs show better water splitting performance compared with the bulk; that is, the onset potential is decreased from 1.224 V to -0.021 V versus the Ag/AgCl electrode, and the current density is increased from 2.64 m A·cm -2 to 3.61 m A·cm -2 at 1.4 V. Particularly, the N-doped 4H-SiC NWAs exhibit an extremely sensitive response to light. The improved optical absorption capacity and efficient charge transfer of N-doped 4H-SiC NWAs are responsible for the improvement in PEC water splitting performance. On the one hand, when the N-doped 4H-SiC NWAs are exposed to light, a significant amount of light shines into the gap between the nanowires. N-doped 4H-SiC obtains additional light absorption pathways with the constant reflection of the light, significantly enhancing the light absorption efficiency. On the other hand, the NWAs can considerably reduce the hole travel distance and avoid the recombination of the photogenerated electron-hole pairs, making more charges participate in the redox reaction to enhance the PEC water splitting performance of N-doped 4H-SiC. By building semiconductor photoanode nanostructures, it is possible to efficiently absorb light and transfer charge, significantly enhancing the PEC water splitting efficiency.

Vertically aligned InGaN nanowire arrays on pyramid textured Si (100): A 3D arrayed light trapping structure for photoelectrocatalytic water splitting

Vertically aligned InGaN nanowire arrays on pyramid textured Si (1 0 0): A 3D arrayed light trapping structure for photoelectrocatalytic water splitting

3D InGaN nanowire arrays on oblique pyramid-textured Si (311) for light trapping and solar water splitting enhancement

Modulating Surface/Interface Structure of Emerging InGaN Nanowires for Efficient Photoelectrochemical Water Splitting

The fabrication of GaN/InGaN nano-pyramids photoanode and its enhanced water splitting performance

A Nanoporous GaN Photoelectrode on Patterned Sapphire Substrates for High-Efficiency Photoelectrochemical Water Splitting

Effective Silicon Nanowire Arrays/wo3 Core/shell Photoelectrode for Neutral Ph Water Splitting

GaN nanorods on V-groove textured Si (111): significant light trapping for photoelectrocatalytic water splitting

Integrated Photoanode Based on Silicon Carbide Nanowire Arrays for Efficient Water Splitting

InGaN/Cu2O Heterostructure Core-Shell Nanowire Photoanode for Efficient Solar Water Splitting

Mesoporous Ultrathin In2O3 Nanosheet Cocatalysts on a Silicon Nanowire Photoanode for Efficient Photoelectrochemical Water Splitting

Plasmon-enhanced Photoelectrochemical Water Splitting by InGaN/GaN Nano-Photoanodes

Cobalt Phosphate-Modified (GaN) 1– x (ZnO) x /GaN Branched Nanowire Array Photoanodes for Enhanced Photoelectrochemical Performance

Mesoporous Ultrathin In 2 O 3 Nanosheet Cocatalysts on a Silicon Nanowire Photoanode for Efficient Photoelectrochemical Water Splitting

Highly Efficient InGaN Nanorods Photoelectrode by Constructing Z‐scheme Charge Transfer System for Unbiased Water Splitting

Enhanced charge separation and interfacial charge transfer of InGaN nanorods/C3N4 heterojunction photoanode

Nanoporous GaN Photoanode Decorated with Plasmonic Au Nanoparticles for Enhanced Solar Water Splitting

An In0.42Ga0.58N Tunnel Junction Nanowire Photocathode Monolithically Integrated on a Nonplanar Si Wafer

Graphitic carbon nitride (g-C<sub>3</sub>N<sub>4</sub>)-based nanosized heteroarrays: Promising materials for photoelectrochemical water splitting

Ultrafine Si Nanowires/sn3o4 Nanosheets 3D Hierarchical Heterostructured Array As a Photoanode with High-Efficient Photoelectrocatalytic Performance

Fabrication of an InGaN/GaN nanotube-based photoanode using nano-imprint lithography and a secondary sputtering process for water splitting