Abstract:Group III-nitride semiconductors exhibit many ideal characteristics for solar water splitting, including a tunable energy bandgap across nearly the entire solar spectrum and suitable band edge positions for water oxidation and proton reduction under visible and near-infrared light irradiation. To date, however, the best reported energy conversion efficiency for III-nitride semiconductor photocathodes is still below 1%. Here we report on the demonstration of a relatively efficient p-type In0.42Ga0.58N photocathode, which is monolithically integrated on an n-type nonplanar Si wafer through a GaN nanowire tunnel junction. The open pillar design, together with the nonplanar Si wafer can significantly maximize light trapping, whereas the tunnel junction reduces the interfacial resistance and enhances the extraction of photo-generated electrons. In addition, photodeposited Pt nano-particles on InGaN nanowire surfaces significantly improve the cathodic performance. The nanowire photocathode exhibits a photocurrent density of 12.3 mA cm(-2) at 0 V vs. RHE and an onset potential of 0.79 V vs. RHE under AM 1.5 G one-sun illumination. The maximum applied bias photon-to-current efficiency reaches 4% at similar to 0.52 V vs. RHE, which is one order of magnitude higher than the previously reported values for III-nitride photocathodes. Significantly, no performance degradation was measured for over 30 h solar water splitting with a steady photocurrent density similar to 12 mA cm(-2) without using any extra surface protection, which is attributed to the spontaneous formation of N-terminated surfaces of InGaN nanowires to protect against photocorrosion.

An In0.42Ga0.58N Tunnel Junction Nanowire Photocathode Monolithically Integrated on a Nonplanar Si Wafer

InGaN/Si Double-Junction Photocathode for Unassisted Solar Water Splitting

3D InGaN nanowire arrays on oblique pyramid-textured Si (311) for light trapping and solar water splitting enhancement

InGaN/Cu2O Heterostructure Core-Shell Nanowire Photoanode for Efficient Solar Water Splitting

Vertically aligned InGaN nanowire arrays on pyramid textured Si (1 0 0): A 3D arrayed light trapping structure for photoelectrocatalytic water splitting

Vertically aligned InGaN nanowire arrays on pyramid textured Si (100): A 3D arrayed light trapping structure for photoelectrocatalytic water splitting

Anodic Reconstructed p+‐GaAs/a‐InAsN for Stable and Efficient Photoelectrochemical Hydrogen Evolution

InGaN Nanorods/cubi2o4 Heterojunction Photoanodes for Photoelectrochemical Water Splitting

Graphene-linked Graphitic Carbon Nitride/tio 2 Nanowire Arrays Heterojunction for Efficient Solar-Driven Water Splitting

Construction of Group III Nitride Van Der Waals Heterostructures for Highly Efficient Photocatalyst

The fabrication of GaN/InGaN nano-pyramids photoanode and its enhanced water splitting performance

Enhanced charge separation and interfacial charge transfer of InGaN nanorods/C3N4 heterojunction photoanode

Oxynitrides enabled photoelectrochemical water splitting with over 3,000 hrs stable operation in practical two-electrode configuration

Fabrication of an InGaN/GaN nanotube-based photoanode using nano-imprint lithography and a secondary sputtering process for water splitting

Wafer-scale fabrication of self-catalyzed 1.7 eV GaAsP core-shell nanowire photocathode on silicon substrates.

Plasmon-enhanced Photoelectrochemical Water Splitting by InGaN/GaN Nano-Photoanodes

InSe Monolayer: Promising Cocatalyst of G-C3n4 for Water Splitting under Visible Light

Ultrathin 3D Radial Tandem-Junction Photocathode with a High Onset Potential of 1.15 V for Solar Hydrogen Production

High-performing Photoanodes with a Cost-Effective N-Ingan/p-cu2o Heterostructure for Water Splitting

Hexagonal phase/cubic phase homogeneous ZnIn2S4 n-n junction photoanode for efficient photoelectrochemical water splitting

Mesoporous Ultrathin In2O3 Nanosheet Cocatalysts on a Silicon Nanowire Photoanode for Efficient Photoelectrochemical Water Splitting