Abstract:With the rapid development of power electronic devices, miniaturization, high-power density, and high thermal reliability have become the standard for next-generation semiconductor devices. As silicon-based materials are difficult to meet the application requirements for high power density and high-temperature operation, wide-band-gap (WBG) semiconductor, such as silicon carbide (SiC) and gallium nitride (GaN), have taken the main role. Though high-power density and high switching frequency characteristics ensured those materials can lead to high performance power devices, the excessive junction temperatures (Tj) could lead to the deterioration risk for relative packaging material. Especially the die-attach materials, which integrate power chips to substrate, are easily influenced by thermal fatigue and frequency thermal cycling environment. Some new technologies, such as. high-temperature brazing materials, transient liquid phase bonding technology, and sintered silver (Ag) technology, have been investigated. All those materials have their own drawbacks such as serious processing condition, high risk of fragile, and price costing. In comparison, metal copper (Cu) sinter paste is considered an ideal wide-bandgap semiconductor connection material due to its cost-effectiveness, excellent thermoelectric properties, and good thermal reliability. However, for efficient sintering of Cu paste, most research applied pressure, reductive atmosphere and/or high processing temperature, which limited the widely application of Cu sinter paste for high density power device interconnection [1]–[3]. Therefore, it is necessary to study the bonding strength, bonding mechanism, and reliability of copper paste on metal plates in high-power devices. To address these issues, this paper reports a non-pressure Cu sinter paste interconnection technology with nano-particles and reductive solvent included. The paste could form efficient sintering in N2. So that high reliable interconnection between chips and substrate could be achieved. The shear strength, SEM and EDS were applied on sintered interconnection for evaluation. And the result showed that the Cu sinter paste showed good bondability on both Cu and Ag surface, and the key factors for high rank sintering were explored. This work provides both experimental and theoretical research for creating high-strength connections by sintered Cu pastes, and extended the potential of Cu sinter paste in high density power devices.

A highly reliable die bonding approach for high power devices by low temperature pressureless sintering using a novel Cu nanoparticle paste

Superb Sinterability of the Cu Paste Consisting of Bimodal Size Distribution Cu Nanoparticles for Low-Temperature and Pressureless Sintering of Large-Area Die Attachment and the Sintering Mechanism

Extraordinarily enhanced sintering performance of pressureless sinterable Cu nanoparticle paste for achieving robust die-attach bonding by using reducing hybrid solvent

Low-Temperature and Low-Pressure Cu–Cu Bonding by Highly Sinterable Cu Nanoparticle Paste

Superior Strength and Strengthening Mechanism of Die Attachment Joints by Using Bimodal-Sized Cu Nanoparticle Paste Capable of Low-Temperature Pressureless Sintering

Effects of size distributions of copper nanoparticles on the pressureless bonding performance of the copper paste for die attachment

Formation of Cu-Cu Joints with High Shear Strength and High Reliability in Air Atmosphere

Cu-Cu joint formation by low-temperature sintering of self-reducible Cu nanoparticle paste under ambient condition

In-air sintering of copper nanoparticle paste with pressure-assistance for die attachment in high power electronics

Non-Pressure Cu Sinter Paste for High Density Power Device Interconnection

Low-temperature and Low-Pressure Cu-Cu Bonding by Pure Cu Nanosolder Paste for Wafer-Level Packaging

Low Temperature and Low Pressure Cu-Cu Bonding with Ag Doped Cu Nanosolder Paste

Large-area Die Attachment and the Surface Finish Effect on Bonding Strength of Joints in High-power Electronics Using a Low-temperature Sinterable Cu Nanoparticle Paste

Fabrication of High-Strength Cu–Cu Joint by Low-Temperature Sintering Micron–nano Cu Composite Paste

High performance Cu sintering joint for power devices enabled by in-situ generation of Cu particles with multi-level hierarchical structures

Low Temperature Bonding Process Using Mixed Cu-Ag Nanoparticles for Electronic Packaging

Highly Conductive Cu-Cu Joint Formation by Low-Temperature Sintering of Formic Acid-Treated Cu Nanoparticles

Synthesis and Characterization of Highly-Dispersed Copper Submicron Particles for Low Temperature Sintering Joints

Facile Preparation of Cu Micro-Nano Composite Particle Paste for Low Temperature Bonding

Sintering Mechanism of Bimodal-Sized Cu Nanoparticle Paste for Power Electronics Packaging

Facile Preparation of Self-Reducible Cu Nanoparticle Paste for Low Temperature Cu-Cu Bonding