Abstract:The controllable large‐area growth of single‐crystal vertical heterostructures based on 2D transition metal dichalcogenides (TMDs) remains a challenge. Here, large‐area vertical MoS2/WS2 heterostructures are synthesized using single‐step confined‐space chemical vapor epitaxy. The heterostructures can evolve into two different kinds by switching the H2 flow on and off: MoS2/WS2 heterostructures with multiple WS2 domains can be achieved without introducing the H2 flow due to the numerous nucleation centers on the bottom MoS2 monolayer during the transition stage between the MoS2 and WS2 monolayer growth. In contrast, isolated MoS2/WS2 heterostructures with single WS2 domain can be obtained with introducing the H2 flow due to the reduced nucleation centers on the bottom MoS2 monolayer arising from the hydrogen etching effect. Both the two kinds of the vertical MoS2/WS2 heterostructures feature high quality. The photodetectors based on the isolated MoS2/WS2 heterostructures exhibit a high responsivity of 68 mA W−1 and a short response time of 35 ms. This single‐step chemical vapor epitaxy can be used to synthesize vertical MoS2/WS2 heterostructures with high production efficiency. The new epitaxial growth approach may open new pathways to fabricate large‐area heterostructures made of different 2D TMDs monolayers of interest to electronics, optoelectronics, and other applications.

Two-dimensional MoSe2/graphene Heterostructure Thin Film with Wafer-Scale Continuity Via Van Der Waals Epitaxy

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Two‐Dimensional Layered Heterostructures Synthesized from Core–Shell Nanowires

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Two Step Chemical Vapor Deposition of In2se3/Mose2 Van Der Waals Heterostructures

Vertical Heterostructures of Layered Metal Chalcogenides by Van Der Waals Epitaxy.

Molecular Beam Epitaxy Growth of Atomically Ultrathin MoTe2 Lateral Heterophase Homojunctions on Graphene Substrates

Relationship between phosphorylation and cytotoxicity of 2-chloroadenosine and 6-methylmercaptopurine riboside in human cells.

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Seeded 2D Epitaxy of Large-Area Single-Crystal Films of the Van Der Waals Semiconductor 2H MoTe2.

Epitaxial Growth of Two-Dimensional MoO 2 -MoSe 2 Metal-Semiconductor Heterostructures for Schottky Diodes

Facile synthesis of two-dimensional MoS2/WS2 lateral heterostructures with controllable core/shell size ratio by a one-step chemical vapor deposition method

Two-Dimensional Lateral Heterostructures Made by Selective Reaction on a Patterned Monolayer MoS2 Matrix

Arrayed van der Waals Vertical Heterostructures based on 2D GaSe Grown by Molecular Beam Epitaxy

Vapor Phase Epitaxial Growth of Ultrathin Nonlayered-CoSe/WSe2 Heterostructure Moiré Superlattices

Controllable Epitaxial Growth of Large‐Area MoS 2 /WS 2 Vertical Heterostructures by Confined‐Space Chemical Vapor Deposition

Direct van der Waals epitaxial growth of 1D/2D Sb2Se3/WS2 mixed-dimensional p-n heterojunctions

Epitaxial Growth of Two-Dimensional Metal-Semiconductor Transition-Metal Dichalcogenide Vertical Stacks (vse2/mx2) and Their Band Alignments.

Van der Waals epitaxial growth and optoelectronics of a vertical MoS2/WSe2 p–n junction