Fabrication and Performance of Pixelated Gamma-Cui Scintillation Conversion Screens Based on Oxidized Silicon Micropore Arrays

Sun Shou-qiang,Gu Mu,Chen Ting-ting,Zhang Juan-nan,Liu Xiao-lin,Liu Bo,Huang Shi-ming,Ni Chen

DOI: https://doi.org/10.3964/j.issn.1000-0593(2017)05-1566-05

2017-01-01

Abstract:The pixelated CuI scintillation conversion screens which have a monodisperse micro-columnar structure were fabricated with pressure-injection method using the high-purity CuI powder and oxidized silicon micropore arrays. The results of scanning electron microscopy and X-ray diffraction show that CuI micro-columns are continuous and dense with the crystal lattice of (-phases. Their diameters, spaces and depths are about 2. 5, 1. 5 and 80 mu m, respectively. X-ray excited luminescence (XEL) reveals that the as-prepared gamma-CuI scintillation screens have an emission band near 680 nm, which has a comparatively slow decay time. After/iodine-doping especially at the content of 10 Wt%, the emission band near 680 nm is effectively suppressed with an emission peak at 432 nm, which has an ultra-fast decay time. The spatial resolution of the pixelated gamma-CuI scintillation conversion screens was measured with knife-edge method. The result shows that the resolution can reach to 38 1p.mm(-1), which indicate that the pixelated-gamma-CuI scintillation screens have excellent spatial resolution with ultra-fast time response and it possess a unique value in X-ray imaging.