Abstract:As a new type of inorganic scintillator, ZnO crystal doped with Ga has been used for Ultra-fast scintillating detectors with fast response to detect X-ray, gamma, neutron, and charged particles. Moreover, due to the large bandgap energy and high threshold displacement energy, ZnO: Ga has a strong radiation resistance in theory. However, there is a lack of experimental studies on the change of scintillation properties of ZnO: Ga under an intense irradiation environment. This study deposited thin Ga-doped ZnO films on alpha-Al2O3(0001) substrate by dual-target reactive magnetron sputtering. The ZnO: Ga samples were irradiated by neutrons from 1010 to 7.1 x 1014 neutrons/cm2 (1 MeV neutron equivalent fluence) and gamma rays from 500 to 10,000 Gy, respectively. The structural and optical properties of all irradiated samples were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), optical transmittance (TS), and effective light output at room temperature. The results indicated that all the irradiated samples are still in both hexagonal wurtzite structure and c-axis orientation. Compared with unirradiated samples, it is found that the samples' optical transmittance, energy resolution, and effective light output have little change due to irradiation, which has fully proved that the ZnO: Ga scintillation films have good radiation resistance under neutron and gamma irradiation. Hence, ZnO: Ga is an attractive candidate for radiation detectors with ultra-fast responses under extreme radiation environments.

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