Abstract:In this paper, the metal‐assisted chemical etching (MACE) method is presented along with the advantages of using this method. Large areas and a combination of large and narrow patterning areas are successfully produced by using metal meshes for MACE. Moreover, in order to exemplify this microfabrication technique, the authors demonstrate the fabrications of different microelectromechanical systems (MEMS) devices; from simple structure (micro‐cantilever) to a complex structure (capacitive silicon resonator). Micro‐cantilever beam with resonant frequency of 262 kHz and quality factor of 8100 is successfully fabricated using this technique. Narrow capacitive gap width together with silicon resonator structure is also microprocessed by MACE technique. For the capacitive resonator, nano gaps with 250 nm‐width and 7 μm‐height is successfully micro‐fabricated using MACE process on a silicon on insulator (SOI) wafer. The resonant peak of the fabricated device is found at 81.4 MHz with quality factor of 4000 and motional resistance of 89 kΩ. The MACE process is performed in the wet etching solution that enables the fabrication of anisotropic silicon structures. This paper demonstrates that MACE method could potentially replace dry etching technique currently used for the fabrication of various electronics and photonics devices and energy applications. Due to the ease of implementation and possibility of batch fabrication, MACE method is a promising technique for the manufacturing of a broad range of high‐quality Si‐based devices at low cost.

Low cost metal mini-cap process for suspended mems device packaging (draft)

Low Cost Metal Mini-Cap Process for Suspended MEMS Device Packaging

Process Development of A New Tgv Interposer for Wafer Level Package of Inertial Mems Device

A strategy of wafer-level-plastic-packaging for MEMS based on adhesive bonding

Novel Bonding technologies for wafer-level transparent packaging of MOEMS

A fast and CMP-free TSV process based on wafer-level liquid-metal injection for MEMS packaging

High density and through wafer copper interconnections and solder bumps for MEMS wafer-level packaging

Chip Level Packaging for Mems Using Silicon Cap

Partially Filled TGV Based on Double Sides Cu Conformal Electroplating Process for MEMS Vacuum Packaging

Removable Fast Package Technology For Mems Devices Using Polymer Connectors And Silicon Sockets

Sub-Micron Electrical Interconnection Enabled Ultra-High I/O Density Wafer Level SiP Integration

Plastic-Silicon Bonding for MEMS Packaging Application

Parasitic Effects Reduction for Wafer-Level Packaging of RF-Mems

Realize Multiple Hermetic Chamber Pressures for System-on-chip Process by Using the Capping Wafer with Diverse Cavity Depths

Removable Fast Packing Of Mems Devices Using Polymer Connectors And Silicon Sockets

Low Cost and High‐Aspect Ratio Micro/Nano Device Fabrication by Using Innovative Metal‐Assisted Chemical Etching Method

Highly Processable Wtsv Modular Manufacturing for Next Generation 3D MEMS/NEMS Integrated System

Wafer Level Micropackaging for RF MEMS Switches

A Generic Surface Micromachining Module for Mems Hermetic Packaging at Temperatures Below 200 degrees C

The Hybrid Fabrication Process of Metal/Silicon Composite Structure for MEMS S&A Device.

Encapsulation of the next generation advanced mems& sensor microsystems