Reducing the SiO x layer on Si/reduced graphene oxide enables fast and reversible lithium-ion storage capability for lithium-ion batteries

Kaiyuan Zhang,Xin Gu,Xiaolei Jiang,Lifeng Cui,Jian Yang
DOI: https://doi.org/10.1016/j.mtcomm.2024.109004
IF: 3.8
2024-04-28
Materials Today Communications
Abstract:To investigate whether the presence of a SiO x layer affects the electrochemical performance of silicon-based materials, particularly the silicon-carbon anode material, a facile and scalable process involving HCl etching, annealing, and HF etching was employed to synthesize a silicon-carbon composite (Si/SiO x -rGO) and reduce the SiO x layer content at the silicon-carbon interface to obtain a Si-rGO composite. Experimental results demonstrate that this method effectively reduces the SiO x content in the composite. By decreasing the SiO x layer content, the Si-rGO composite exhibits the specific capacities of 758.3 mAh g −1 at 3 A g −1 and 557 mAh g −1 at 5 A g −1 . After 200 cycles at 2 A g −1 , it still retains a capacity of 930.8 mAh g −1 . These findings offer comprehensive insights into the SiO x layer at the silicon-carbon interface, thereby enhancing the application of silicon-based anode materials.
materials science, multidisciplinary
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