Abstract:A perpetual quest in the field of topological quantum matter is to search for electronic phases with unprecedented band topology and transport phenomena. The most prominent example is the discovery of topological insulators, in which band inversion leads to topologically nontrivial bulk electronic structure and metallic boundary states. In two-dimensional topological insulators with time-reversal symmetry, a pair of helical edge states gives rise to the quantum spin Hall effect. When the time-reversal symmetry is broken by magnetic order, only one chiral edge mode remains and the quantum anomalous Hall effect emerges in zero magnetic field. This quantum Hall phase without Landau levels, first observed in magnetically doped topological insulators, is now called the Chern insulator. The recently discovered MnBi2Te4 combines intrinsic magnetism and nontrivial topology in one material, providing an ideal platform for exploring novel topological phases. Here, we investigate the transport properties of exfoliated MnBi2Te4 in exceedingly high magnetic fields up to 60 T. By varying the gate voltage, we observe systematic and yet uniquely complex evolution of quantized Hall plateaus with Chern numbers from C = -3 to +2. More surprisingly, a novel phase characterized by an extremely broad zero Hall plateau emerges as the most robust ground state in the high field limit. Theoretical calculations reveal that this C = 0 phase arises from the coexistence of a connate Chern band with C = -1 and a Zeeman-effect-induced Chern band with C = +1, as corroborated by nonlocal transport measurements. This helical Chern insulator phase with broken time-reversal symmetry represents an unexpected new member of the quantum Hall family, and manifests a new route to change the band topology by using magnetic field.

Experimental Evidence for Dissipationless Transport of the Chiral Edge State of the High-Field Chern Insulator in MnBi2Te4 Nanodevices

Evidence for One-Dimensional Chiral Edge States in a Magnetic Weyl Semimetal Co3Sn2S2

Scaling and Nonlocal Behavior of the Chern Insulator State in Magnetic Topological Insulator MnBi2Te4 Device

Scale-Invariant Dissipationless Chiral Transport in Magnetic Topological Insulators Beyond the Two-Dimensional Limit

Anomalous Edge Transport in the Quantum Anomalous Hall State.

Direct Observation of Chiral Edge Current at Zero Magnetic Field in a Magnetic Topological Insulator

Direct observation of chiral edge current at zero magnetic field in odd-layer MnBi$_2$Te$_4$

Magnetic-field-induced robust zero Hall plateau state in MnBi2Te4 Chern insulator

Influence of the Dissipative Topological Edge State on Quantized Transport in MnBi2Te4

Helical Chern insulator phase with broken time-reversal symmetry in MnBi$_2$Te$_4$

Influence of the dissipative topological edge state on quantized transport in MnBi 2 Te 4

Electric Control of a Canted-Antiferromagnetic Chern Insulator

Large discrete jumps observed in the transition between Chern states in a ferromagnetic topological insulator

Chern insulator phase realized in dual-gate-tuned MnBi2Te4 thin films grown by molecular beam epitaxy

Chiral transport along magnetic domain walls in the quantum anomalous Hall effect

Topological Current Divider in a Chern Insulator Junction

Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator

Dissipative edge transport in disordered axion insulator films

Zero Magnetic Field Plateau Phase Transition in Higher Chern Number Quantum Anomalous Hall Insulators

Magnetization-tuned topological quantum phase transition in MnBi2Te4 devices

Chiral edge transport along domain walls in magnetic topological insulator nanoribbons